BLF6G22LS-100 |
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NXP Semiconductors
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 29 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 18.5 dB |
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Original |
PDF
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BLF6G22LS-100 |
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NXP Semiconductors
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BLF6G22LS-100 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power |
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Original |
PDF
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BLF6G22LS-100,112 |
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Ampleon USA
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.2DB SOT502B |
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Original |
PDF
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BLF6G22LS-100,118 |
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Ampleon USA
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.2DB SOT502B |
|
Original |
PDF
|
BLF6G22LS-100,112 |
|
NXP Semiconductors
|
Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 29 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 18.5 dB; Package: SOT502B (LDMOST); Container: Blister pack |
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Original |
PDF
|
BLF6G22LS-100,112 |
|
NXP Semiconductors
|
BLF6G22LS-100 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power |
|
Original |
PDF
|
BLF6G22LS-100,118 |
|
NXP Semiconductors
|
Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 29 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 18.5 dB; Package: SOT502B (LDMOST); Container: Reel Pack, SMD, 13" |
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Original |
PDF
|
BLF6G22LS-100,118 |
|
NXP Semiconductors
|
BLF6G22LS-100 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power |
|
Original |
PDF
|