Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BFR183T Search Results

    SF Impression Pixel

    BFR183T Price and Stock

    Infineon Technologies AG BFR-183T-E6327

    RF TRANS NPN 12V 8GHZ SC75
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFR-183T-E6327 Reel 6,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.10042
    		Buy Now

    BFR183T Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFR183T Infineon Technologies NPN Silicon RF transistor for low noise, high gain broadband amplifiers in SC75 package Original PDF
    BFR183T Vishay Telefunken Silicon NPN Planar RF Transistor Original PDF
    BFR 183T E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 12V SC-75 Original PDF
    BFR183TE6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 12V SC-75 Original PDF
    BFR183TE6327 Infineon Technologies TRANS GP BJT NPN 12V 0.065A 3SC-75 T/R Original PDF
    BFR183TF Vishay Siliconix Transistors, RF & AF Original PDF
    BFR183TW Vishay Intertechnology Silicon NPN Planar RF Transistor Original PDF
    BFR183TW Vishay Telefunken Silicon NPN Planar RF Transistor Original PDF
    BFR183TW-GS08 Vishay TRANS GP BJT NPN 10V 0.065A 3SOT-323 T/R Original PDF

    BFR183T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BFR183TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		PDF BFR183TF OT-490 D-74025 28-Apr-05

    BFR183T

    Abstract: Telefunken
    Text: BFR183T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure D High power gain


    Original     		PDF BFR183T D-74025 17-Apr-96 BFR183T Telefunken

    Untitled

    Abstract: No abstract text available
    Text: BFR183T NPN Silicon RF Transistor Preliminary data 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR183T VPS05996

    BFR183TF

    Abstract: No abstract text available
    Text: BFR183TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		PDF BFR183TF OT-490 OT-490 D-74025 30-Aug-04 BFR183TF

    BFR183T

    Abstract: BFR183TW
    Text: BFR183T/BFR183TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure


    Original     		PDF BFR183T/BFR183TW BFR183T BFR183TW D-74025 20-Jan-99

    BFR183T

    Abstract: BFR183TW
    Text: BFR183T/BFR183TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure


    Original     		PDF BFR183T/BFR183TW BFR183T BFR183TW D-74025 20-Jan-99

    Untitled

    Abstract: No abstract text available
    Text: BFR183T / BFR183TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • 1 Low noise figure High power gain e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 1 Applications For low noise and high gain broadband amplifiers at


    Original     		PDF BFR183T BFR183TW 2002/95/EC 2002/96/EC OT-23 BFR183TW OT-323 D-74025 28-Apr-05

    BFR183T

    Abstract: BFR183TW
    Text: BFR183T/BFR183TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure


    Original     		PDF BFR183T/BFR183TW BFR183T BFR183TW D-74025 20-Jan-99

    Untitled

    Abstract: No abstract text available
    Text: BFR183T/BFR183TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure


    Original     		PDF BFR183T/BFR183TW BFR183T BFR183TW D-74025 20-Jan-99

    BFR183T

    Abstract: BFR183TW
    Text: BFR183T / BFR183TW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • 1 Low noise figure High power gain e3 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 1 Applications For low noise and high gain broadband amplifiers at


    Original     		PDF BFR183T BFR183TW 2002/95/EC 2002/96/EC BFR183T OT-23 OT-323 08-Apr-05 BFR183TW

    Untitled

    Abstract: No abstract text available
    Text: BFR183T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR183T

    Untitled

    Abstract: No abstract text available
    Text: BFR183T NPN Silicon RF Transistor Preliminary data 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR183T VPS05996

    BFR183TF

    Abstract: No abstract text available
    Text: BFR183TF VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		PDF BFR183TF OT490 OT490 D-74025 23-Sep-02 BFR183TF

    Untitled

    Abstract: No abstract text available
    Text: BFR183TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description 1 The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous


    Original     		PDF BFR183TF OT-490 08-Apr-05

    BFR183TW

    Abstract: No abstract text available
    Text: BFR183TW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure D High power gain


    Original     		PDF BFR183TW D-74025 11-Oct-96 BFR183TW

    BFR183T

    Abstract: No abstract text available
    Text: BFR183T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure D High power gain


    Original     		PDF BFR183T D-74025 17-Apr-96 BFR183T

    BCR108T

    Abstract: BFR183T SC75
    Text: BFR183T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR183T BCR108T BFR183T SC75

    BFR183T

    Abstract: SC75
    Text: BFR183T NPN Silicon RF Transistor Preliminary data 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFR183T VPS05996 900MHz Aug-22-2001 BFR183T SC75

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    Untitled

    Abstract: No abstract text available
    Text: BFR183T/BFR183TW Y Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications For low noise and high gain broadband am plifiers at co lle ctor currents from 2 mA to 30 mA. Features


    OCR Scan     		PDF BFR183T/BFR183TW 183TW D-74025 20-Jan-99

    marking RH

    Abstract: No abstract text available
    Text: Tem ic BFR183T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor £ Electrostatic sensitive device. Observe precautions for handling. M Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 inA. Features


    OCR Scan     		PDF BFR183T 1S21e 17-Apr-96 marking RH

    S852T

    Abstract: BF579 T0-50 BF964S BF96 BFP183T
    Text: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15


    OCR Scan     		PDF BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T S852T BF579 T0-50 BF96 BFP183T

    s525

    Abstract: s918 BF988 bfr96ts S858TA3 BF-970 BFP183T
    Text: Tem ic Semiconductors General Information Alphanumeric Index Type. T ype . Type. Type . BFR90A 9, 243 S593T 8, 105 BFR91 9, 250 S594T 8, 112 9, 163 BFR91A . . . . 9, 256 S595T 8, 119 BFP81 9, 173 BFR92 S822T 9, 338 8. 52


    OCR Scan     		PDF BF569 BF579 BF961 BF964S BF966S BF970 BF979 BF988 BF994S BF995 s525 s918 bfr96ts S858TA3 BF-970 BFP183T