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    BFR10 Search Results

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    Infineon Technologies AG BFR106E6327HTSA1

    RF TRANS NPN 15V 5GHZ SOT23-3
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    DigiKey BFR106E6327HTSA1 Reel 18,000 3,000
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    Arrow Electronics BFR106E6327HTSA1 33,000 4 Weeks 3,000
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    BFR106E6327HTSA1 Cut Strips 142 4 Weeks 1
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    Verical BFR106E6327HTSA1 97,000 3,465
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    BFR106E6327HTSA1 6,000 3,465
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    BFR106E6327HTSA1 142 63
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    Avnet Americas BFR106E6327HTSA1 Ammo Pack 18 Weeks, 6 Days 1
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    BFR106E6327HTSA1 Reel 4 Weeks 3,000
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    Newark BFR106E6327HTSA1 Cut Tape 155 1
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    BFR106E6327HTSA1 Reel 3,000
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    Mouser Electronics BFR106E6327HTSA1 75,045
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    Rochester Electronics BFR106E6327HTSA1 105,918 1
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    Chip1Stop BFR106E6327HTSA1 Cut Tape 14,102
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    BFR106E6327HTSA1 Bulk 42
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    EBV Elektronik BFR106E6327HTSA1 5 Weeks 3,000
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    PanJit Group MER2DBF_R1_00701

    200V,SUPER FAST RECOVERY RECTIFI
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    DigiKey MER2DBF_R1_00701 Reel 18,000 1,500
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    PanJit Group STR8100LBF_R1_00701

    DIODE SCHOTTKY 100V 8A SMBF
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    DigiKey STR8100LBF_R1_00701 Digi-Reel 3,662 1
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    STR8100LBF_R1_00701 Cut Tape 3,662 1
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    STR8100LBF_R1_00701 Reel 1,500
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    PanJit Group MER3DBF_R1_00701

    200V,SUPER FAST RECOVERY RECTIFI
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    DigiKey MER3DBF_R1_00701 Reel 3,000 1,500
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    MER3DBF_R1_00701 Cut Tape 2,990 1
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    PanJit Group SBM360VBF_R1_00001

    SMBF, SKY
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    DigiKey SBM360VBF_R1_00001 Reel 1,500 1,500
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    Ozdisan Elektronik SBM360VBF_R1_00001
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    BFR10 Datasheets (48)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFR10 Micro Electronics Medium Power Amplifiers and Switches Scan PDF
    BFR10 Micro Electronics Semiconductor Device Data Book Scan PDF
    BFR10 Micro Electronics Medium Power Amplifiers and Switches Scan PDF
    BFR10 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BFR10 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BFR10 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFR10 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFR10 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFR10 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFR10 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BFR10 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFR10 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BFR10 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BFR10 Semico Medium Power Transistors Scan PDF
    BFR10 SGS-Ates Shortform Data Book 1977/78 Short Form PDF
    BFR101A Philips Semiconductors N-Channel Junction Field-Effect Transistor Original PDF
    BFR101A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFR101B Philips Semiconductors N-Channel Junction Field-Effect Transistor Original PDF
    BFR101B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFR106 Infineon Technologies NPN Silicon RF Transistor Original PDF

    BFR10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is


    Original
    PDF BFR106 MSB003 R77/02/pp10

    Untitled

    Abstract: No abstract text available
    Text: BFR106 NPN Silicon RF Transistor • High linearity low noise RF transistor 2 3 • 22 dBm OP1dB and 31 dBm OIP3 1 @ 900 MHz, 8 V, 70 mA • For UHF / VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers • Collector design supports 5 V supply voltage


    Original
    PDF BFR106 AEC-Q101

    bfr106

    Abstract: BCW66 marking code FA sot23 12652
    Text: BFR106 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers • For linear broadband amplifiers 2 3 • Special application: antenna amplifiers 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description


    Original
    PDF BFR106 bfr106 BCW66 marking code FA sot23 12652

    BFR106

    Abstract: No abstract text available
    Text: , Unc. LS 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BFR106 Silicon NPN RF Transistor DESCRIPTION • Low Noise Figure NF = 2.5 dB TYP. @VCE = 8 V, lc = 20 mA, f = 900 MHz • High Gain I S2ie I 2 = 10.5 dB TYP. @VCE= 8 V,lc = 70 mA,f = 900 MHz


    Original
    PDF BFR106 500MHz 900MHz BFR106

    BFR106

    Abstract: MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is


    Original
    PDF BFR106 MSB003 R77/02/pp10 BFR106 MSB003

    BFR106

    Abstract: BCW66
    Text: BFR106 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers • For linear broadband amplifiers 2 3 • Special application: antenna amplifiers 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR106 BFR106 BCW66

    BFR106

    Abstract: BCW66 BFR194 E6327 BFR194 E6327
    Text: BFR106 NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers  For linear broadband amplifiers  Special application: antenna amplifiers  Complementary type: BFR194 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR106 BFR194 VPS05161 BFR106 BCW66 BFR194 E6327 BFR194 E6327

    Untitled

    Abstract: No abstract text available
    Text: BFR106 Low Noise Silicon Bipolar RF Transistor • High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA • For UHF / VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers


    Original
    PDF BFR106 AEC-Q101

    BFR106

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is


    Original
    PDF BFR106 BFR106 MSB003 R77/02/pp10 771-BFR106-T/R

    bfr106

    Abstract: BFR194
    Text: BFR106 NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers  For linear broadband amplifiers  Special application: antenna amplifiers  Complementary type: BFR194 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR106 BFR194 VPS05161 900MHz Jun-27-2001 bfr106 BFR194

    AB marking code diode

    Abstract: BFR101B BFR101A
    Text: 7110fl£b G O b T l b M 435 • P H I N BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR S ym m etrical n-channel silicon ju n c tio n fie ld -e ffe c t tran sisto r, designed p rim a rily fo r use as a source fo llo w e r w ith the in p u t protected against successive voltage surges by a fo rw a rd and reverse integrated


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    PDF BFR101A BFR101B BFRT01B AB marking code diode BFR101B

    BFR 450

    Abstract: BFW64 tpl 550 BFW17A BFR38 BFW63 BFX19 BFT95H BFR36 BFR96
    Text: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95


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    PDF BFR10 BFR36 BFR96* 97/2N 98/BFX BFX18 BFR 450 BFW64 tpl 550 BFW17A BFR38 BFW63 BFX19 BFT95H BFR96

    bss17

    Abstract: BFY 99 Transistor BFR 30 BFR 30 transistor BFR 450 BFY 93 bfx 63 bfw 96 Transistor BFR 96 BFX97
    Text: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X CO < E o 'i LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 BFR 37 NPN BFR 38 PNP BFR 90* NPN NPN BFR 91* B F R 96* NPN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN


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    PDF BFR10 BFR36 BFR96* 97/2N 98/TO-39 BFX97A 15/2N 16/2N 17/2N 18/2N bss17 BFY 99 Transistor BFR 30 BFR 30 transistor BFR 450 BFY 93 bfx 63 bfw 96 Transistor BFR 96 BFX97

    Untitled

    Abstract: No abstract text available
    Text: • bbS3T31 □ D 3 S l cifi flSl HIAPX N APIER PHILIPS/D ISCR ETE | BFR101A BFR101B b?E J> _ ^ N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel silicon junction field-effect transistor, designed primarily for use as a source


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    PDF bbS3T31 BFR101A BFR101B

    bcx40

    Abstract: No abstract text available
    Text: Medium Power Amplifiers and Switches TYPE POLA­ CASE NO. RITY BCW97 BCX25 BCX26 BCX40 BCX45 BCX46 BCX47 BCX48 BCX49 BCX50 BCX60 BCX73 BCX74 BCX75 BCX76 BFR10 BFR11 BFR18 BFR19 BFR20 BFR21 BFR22 BFR23 BFR24 BFR41 BFR77 BFR79 BFS92 BFS93 BFS94 BFS95 BFT29 BFT30


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    PDF BCW97 BCX25 BCX26 BCX40 BCX45 BCX46 BCX47 BCX48 BCX49 BCX50

    BFR 450

    Abstract: BFR36 BFY 93 bft95 BFw 94 BFR10 BFR96 BFT95H BFW16A BFW17A
    Text: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95


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    PDF BFR10 BFR36 BFR96* 97/2N BFR16 BFX31 BFX37 BFW43 BFW44 BFX90 BFR 450 BFY 93 bft95 BFw 94 BFR96 BFT95H BFW16A BFW17A

    702 TRANSISTOR npn

    Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ BFR106 UBB773 transistor t 2180 IC 1496 function L7E transistor 22741 transistor s1p 8115, transistor
    Text: m b b s a T a i □ d e s 2 d d 2 3 T « a p x P hilips S e m i c o n d u c t o r s _P ro d u c ^ p e c ific a tio n - N AnER PHILIPS/DISCRETE b?E D NPN 5 GHz wideband transistor ^ BFR106 PINNING


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    PDF bbS3T31 BFR106 702 TRANSISTOR npn RF NPN POWER TRANSISTOR C 10-12 GHZ BFR106 UBB773 transistor t 2180 IC 1496 function L7E transistor 22741 transistor s1p 8115, transistor

    BFR101A

    Abstract: BFR101 BFR101B
    Text: • b b 5 3 T 3 1 □ □ 2 5 1 CÌ0 fisi B I A P X b?E ]> N AMER P H I L I P S / D I S C R E T E BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel silicon junction field-effect transistor, designed primarily for use as a source


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    PDF bb53T31 251cià BFR101A BFR101B BFR101 BFR101A BFR101B

    4000 npn

    Abstract: 122e
    Text: 56 RF/Microwave Devices RF Wideband Transistors Type No. BFQ54T BFQ63 BFQ65 BFQ66 BFQ67 BFQ67W BFQ68 BFQ108 BFQ135 BFQ136 BFQ149 BFQ270 BFQ621 BFQ741 BFR53 BFR90 BFR90A BFR91 BFR91A BFR92 BFR92A BFR92AW BFR93 BFR93A BFR93AW BFR94A BFR95 BFR96 BFR96S BFR106


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    PDF BFQ54T BFQ63 BFQ65 BFQ66 BFQ67 BFQ67W BFQ68 BFQ108 BFQ135 BFQ136 4000 npn 122e

    Untitled

    Abstract: No abstract text available
    Text: bbSBTBl 0032S14 TSO Philips Semiconductors MB APX Product specification NPN 5 GHz wideband transistor crystal X3A-BFR96 N AMER PHILIPS/DISCRETE DESCRIPTION b^E ]> MECHANICAL DATA NPN crystal used in BFR96S SOT37 , BFQ63 (TO-72) and BFR106 (SOT23). Crystals are supplied as whole


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    PDF 0032S14 X3A-BFR96 BFR96S BFQ63 BFR106

    BFR101A

    Abstract: marking 1117 BFR101B
    Text: 7110fl£b G O b T l b M 435 • P H I N BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR S ym m etrical n-channel silicon ju n c tio n fie ld -e ffe c t tran sisto r, designed p rim a rily fo r use as a source fo llo w e r w ith the in p u t protected against successive voltage surges by a fo rw a rd and reverse integrated


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    PDF BFR101A BFR101B BFR101B OT-14C BFR101A marking 1117

    bfr106

    Abstract: No abstract text available
    Text: • D02S20D 23T « a p x Philips S e m i c o n d u c t o r s _ Product specification AMER PHILIPS/ DIS CRETE b?E NPN 5 GHz wideband transistor DESCRIPTION c BFR106 PINNING NPN silicon planar epitaxial transistor In a plastic SOT23


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    PDF D02S20D BFR106 bfr106

    Transistor BFR 96

    Abstract: BFR 30 transistor Transistor BFR 35 BFT95 bfx19 bsx30 BFR 80 BFW17A BFR10 BFR36
    Text: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X < o LU U_ .£= BFR10 N PN N PN BFR 11 NPIM B F R 36 BFR 37 N PN BFR 38 PNP BFR 90* NPN N PN BFR 91* B F R 96* N PN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN PNP


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    PDF BFR10 BFR36 BFR96* 97/2N Transistor BFR 96 BFR 30 transistor Transistor BFR 35 BFT95 bfx19 bsx30 BFR 80 BFW17A

    BFR106

    Abstract: MSB003 MBB773
    Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFR106 PINNING NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF applications. PIN DESCRIPTION 3 Code: R7p


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    PDF BFR106 MSB003 BFR106 MSB003 MBB773