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    JRH Electronics 805-061-16M8-7BF802

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    DigiKey 805-061-16M8-7BF802 1
    • 1 $1527.92
    • 10 $1527.92
    • 100 $1344.5656
    • 1000 $1344.5656
    • 10000 $1344.5656
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    JRH Electronics 805-061-16M10-13BF802

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    DigiKey 805-061-16M10-13BF802 1
    • 1 $1778.71
    • 10 $1778.71
    • 100 $1565.2672
    • 1000 $1565.2672
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    JRH Electronics 805-061-16M11-19BF802

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    DigiKey 805-061-16M11-19BF802 1
    • 1 $2059.37
    • 10 $2059.37
    • 100 $1812.2424
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    JRH Electronics 805-061-16NF9-10BF802

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    DigiKey 805-061-16NF9-10BF802 1
    • 1 $1673.35
    • 10 $1673.35
    • 100 $1472.5452
    • 1000 $1472.5452
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    JRH Electronics 805-061-16M12-26BF802

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    DigiKey 805-061-16M12-26BF802 1
    • 1 $2158.03
    • 10 $2158.03
    • 100 $1899.0668
    • 1000 $1899.0668
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    BF802 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF802 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BF802 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF802 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BF802 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BF802 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BF802 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BF802 Texas Instruments Supply Division Product Catalogue 1978/79 Scan PDF
    BF802 Texas Instruments Discrete Devices 1978 Scan PDF

    BF802 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF907

    Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5


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    PDF BFQ73S BFR96 AT41435-5 AT420S5 AT414S5 AT41435-3 AT41470 AT41410 NE9S203 NE9S20S BF907 BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14

    BF817

    Abstract: 3N225 3N160 BF806 p channel depletion mosfet 3N201 BF818 BF805 n channel depletion MOSFET dual gate mosfet in uhf amplifier
    Text: Metal Can FET 's Low Leakage/Noise Current Case Outlines <M i I ^ 1 2 3 5 6 7 Source Drain Gate Source Drain Gate 1 1 1 2 2 2 3 -1 8 _ 0-23 L -4 5 Type No. Case BF800 BF801 BF802 BF805 BF806 TO -72 T 0 -7 2 TO-72 TO -72 TO-72 IG S Pol. max. pA N N N N N


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    PDF 1270J en-100kHz BF800 3x10-" BF801 T0-72 4x10-" BF802 BF805 6x10-" BF817 3N225 3N160 BF806 p channel depletion mosfet 3N201 BF818 n channel depletion MOSFET dual gate mosfet in uhf amplifier

    3N225

    Abstract: BF805 3N201 3N211 BF802 3N202 BF806 BF800 3N204 3N205
    Text: mTexas In s tru m e n ts FET's For V H F A m p lifie rs and M ix e rs Type No. Case I g s s Vp Ciss Crss Pol max. max max. max. nA V pF 2N3823 T072 N 0.5 8 6 2N4416 T072 2N4416A T072 N N 0.1 0.1 6 6 4 4 0.8 0.8 4000 400 4000 10 2 N5549 N 0.25 6 8 2 6000 T018


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    PDF 2N3823 2N4416 2N4416A N5549 3N201 3N202 3N203 N203A 3N204 BF800 3N225 BF805 3N211 BF802 BF806 3N205

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


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    PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


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    PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367

    e420 dual jfet

    Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
    Text: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.


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