BF747W Search Results

BF747W Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BF747W		Philips Semiconductors	NPN 1 GHz Wideband Transistor		Original	PDF

BF747W Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
L33 TRANSISTOR Abstract: transistor L33 npn l33 l33 sot23 l33 thermal UBC370 DD44170 transistor KIN BF747 BF747W Text: NPN 1 GHz wideband transistor PH IL IP S INTERNATIONAL DESCRIPTION "/ ' SbE D • 3 i^ /^ 7 BF747W 71 1D ô E b G D 4 4 ‘17D L33 « P H I N PINNING Silicon NPN transistor in a plastic SOT323 S-mini envelope. It is primarily intended as a mixer, oscillator and IF amplifier in UHF	OCR Scan	PDF	BF747W 711DflEb DD44170 OT323 BF747W BF747. UBC370 OT323. L33 TRANSISTOR transistor L33 npn l33 l33 sot23 l33 thermal UBC370 transistor KIN BF747
Untitled Abstract: No abstract text available Text: Phlllp^emlconductors M b b 5 3 T 31 DOS l O f l l TOb M APX Preliminary specification NPN 1 GHz wideband transistor BF747W N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D PINNING Silicon NPN transistor in a plastic SOT323 S-mini envelope. It Is primarily intended as a mixer,	OCR Scan	PDF	BF747W OT323 BF747W BF747.
so 54 t Abstract: BF547B BF751 T143R BFG65 Text: 54 RF/Microwave Devices RF W ideband Transistors Ratings V ic * Type No. BF547 B F547W BF689K BF747 BF747W BF748 BF751 BF763 B F G 16 A B F G 17 A B FG 25 A /X BFG31 BFG 32 B FG 33 BFG33/X BFG33/XR B FG 34 BFG35 BFG 55 B FG 65 B FG 67 B FG67/X BFG67/XR BFG90A	OCR Scan	PDF	BF547 F547W BF689K BF747 BF747W BF748 BF751 BF763 BFG31 BFG33/X so 54 t BF547B T143R BFG65
Untitled Abstract: No abstract text available Text: / s 3 i~ /^7 NPN 1 GHz wideband transistor P H I L IP S I N T E R N A T I O N A L DESCRIPTION SbE D • BF747W 711DflSb G D 4 4 T 7 0 b33 M P H I N PINNING Silicon NPN transistor in a plastic SOT323 S-mini envelope. It is primarily intended as a mixer, oscillator and IF amplifier in UHF	OCR Scan	PDF	BF747W 711DflSb OT323 BF747W BF747.
BF747 Abstract: BF747W Text: P M Ii^ S e n ^ c o n d u c t o r e _ M bb53T31 D03]infll ^Qb M APX Preliminary specification NPN 1 GHz wideband transistor BF747W N AMER PHILIPS/DISCRETE D E S C R IP T IO N b'îE D PIN N IN G Silicon N P N transistor in a plastic S O T 3 2 3 S-minl envelope. It is	OCR Scan	PDF	bb53T31 BF747W OT323 BF747W BF747. BF747
bf0262a Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94 Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A	OCR Scan	PDF	1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
BF547A Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD Text: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS	OCR Scan	PDF	LCD01 BF547A transistor bf 175 BFG65 equivalent BF547B BFG25AXD
BFT92A Abstract: BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92 Text: 52 RF/Microwave Devices First Generation RF W ideband Transistors fT to 3.5 GHz metal can fr/ lc Curve Polarity (1) (2) N PN NPN (3) (4) (5) NPN NPN NPN (6) (18) NPN NPN TO-39 surface mount plastic TO-72 TQ-92 BFY90 BF689K BF763 BFW30 SOt-37 ceramic SOT-122E	OCR Scan	PDF	BFY90 TQ-92 BF689K BF763 SOt-37 BFT24 BFW92 BFW93 OT-122E OT-23 BFT92A BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92
BFG591 amplifier Abstract: SC08a bfr591 sot173x BB544 sot122 sot172 bfg65 sot143 SIEMENS BFP520 macro-X ceramic Text: Philips Semiconductors Semiconductors for Telecom systems Selection List General For further information, refer to Data Handbook S C 1 4,1993; "RF Wideband Transistors", except otherwise specified. RF wideband transisto rs March 1993 14 Philips Semiconductors	OCR Scan	PDF	OT122 OT143 OT223 OT323 BFS17W BFG17A BFG16A BF547W BF747W BFT25 BFG591 amplifier SC08a bfr591 sot173x BB544 sot122 sot172 bfg65 sot143 SIEMENS BFP520 macro-X ceramic
BST60 Abstract: No abstract text available Text: 98 Surface M ount Devices Darlington Transistors cont. Type % EG V Package v CE(sat) hFE Ratings v CBO V *C ' jnA1’^ 45 45 60 60 80 80 500 500 500 500 500 500 »T max. at lç/lg min. at Ig'V CE V mA/V MHz mA/mA Pinout See Section VII PNP (cont.) BSP60	OCR Scan	PDF	BSP60 BST60 BSP61 BST61 BSP62 BST62 OT-223 OT-89