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    BDT64B Search Results

    BDT64B Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BDT64B Philips Semiconductors Silicon Darlington Power Transistor Original PDF
    BDT64B Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BDT64B Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDT64B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT64B Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT64B Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF
    BDT64B Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF
    BDT64BF Philips Semiconductors Silicon Darlington Power Transistor Original PDF
    BDT64BF Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT64BF Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT64BF Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF
    BDT64BF Philips Semiconductors Silicon Darlington Power Transistors Scan PDF

    BDT64B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


    Original     		PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


    Original     		PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


    Original     		PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


    Original     		PDF 2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

    BD179-10 equivalent

    Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		PDF BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1

    sec tip41c

    Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


    Original     		PDF MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943

    TRANSISTOR BC 384

    Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required


    Original     		PDF TIP47 E69369, MJF47 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TRANSISTOR BC 384 BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100

    Transistor 2sC1060

    Abstract: 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:


    Original     		PDF BDW46 BDW42/BDW47 220AB BDW42* BDW47* TIP73B TIP74 TIP74A TIP74B Transistor 2sC1060 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59

    BDT64AF

    Abstract: BDT64BF BDT64CF BDT64F BDT65AF BDT65BF BDT65CF BDT65F r64A 004887
    Text: BDT64F; BDT64AF BDT64BF: BDT64CF PHILIPS INTERNATIONAL SbE T> • VllDflEti 00432Ö2 CHI ■ P H I N SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington power transistors in a SO T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT64F; BDT64AF BDT64BF: BDT64CF OT186 BDT65F, BDT65AF, BDT65BF BDT65CF. BDT64F! BDT64AF BDT64BF BDT64CF BDT64F BDT65AF BDT65CF BDT65F r64A 004887

    Untitled

    Abstract: No abstract text available
    Text: BDT64; 64A BDT64B; 64C _ / V SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic envelope. NPN complements are BDT65,


    OCR Scan     		PDF BDT64; BDT64B; O-220 BDT65, BDT65A, BDT65B BDT65C. BDT64 bbS3T31

    bot64

    Abstract: BDT65A BDT64 BDT65C BDT64B BDT65B DT6-4 64a diode BOT65
    Text: BDT64; 64A BDT64B; 64C SILICON DARLINGTON POWER TRANSISTORS P N P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. T O -220 plastic envelope. N PN complements are BOT65,


    OCR Scan     		PDF BDT64; BDT64B; O-220 BOT65, BDT65A, BDT65B BDT65C. BDT64 bot64 BDT65A BDT65C BDT64B DT6-4 64a diode BOT65

    BDT65

    Abstract: IOM10 BDT64 BDT64A BDT64B BDT64C BDT65B TRANSISTORE MSA-06
    Text: J BDT65; 65A BDT65B; 65C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic envelope. PNP complements are BDT64; BDT64A; BDT64B and BDT64C.


    OCR Scan     		PDF BDT65; BDT65B; O-220 BDT64; BDT64A; BDT64B BDT64C. BDT65 T0-220. 7z82329 IOM10 BDT64 BDT64A BDT64C BDT65B TRANSISTORE MSA-06

    BDT64C

    Abstract: BOT64 BOT64B
    Text: BDT64F; BDT64AF BDT64BF; BDT64CF PHILIPS INTERNATIONAL SbE D • VllDflEb 0043202 OTl ■ P H I N SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington power transistors in a SOT186 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT64F; BDT64AF BDT64BF; BDT64CF OT186 BDT65F, BDT65AF, BDT65BF BDT65CF. BDT64F BDT64C BOT64 BOT64B

    BDT64

    Abstract: darlington power transistor 10a ic 565 circuit diagram BDT65A BDT64B BDT65 BDT65B BDT65C 82326
    Text: BDT64;- 64A BDT64B; 64C J^ PHILIPS INTERNATIONAL SbE D • 7110fl2b 00L43274 T15 ■ PHIN ~ C -~ 3 3 - j ; SILICO N DARLINGTON POW ER T R A N SIST O R S PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO -220 plastic envelope. N PN complements are BD T65,


    OCR Scan     		PDF BDT64 BDT64B; 7110fl2b 0Cm3274 O-220 BDT65, BDT65A, BDT65B BDT65C. darlington power transistor 10a ic 565 circuit diagram BDT65A BDT64B BDT65 BDT65C 82326

    bot64

    Abstract: No abstract text available
    Text: BDT64F; BDT64AF BDT64BF; BDT64CF J SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington power transistors in a S 0 T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT64F; BDT64AF BDT64BF; BDT64CF BDT65F, BDT65AF, BDT65CF. BDT64F 003473b bot64

    BDT64C

    Abstract: BDT65 BDT65A BDT64A BDT64 7Z66 BDT64B BDT65B BDT65C
    Text: n o n - BDT64; 64A BDT64B; 64C SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m o n o lith ic Darlington c irc u it fo r audio o u tp u t stages and general purpose a m p lifie r and switching applications. TO-22C plastic envelope. N-P-N complements are BDT65,


    OCR Scan     		PDF BDT64; BDT64B; T0-220 BDT65, BDT65A, BDT65B BDT65C. BDT64 BDT64F BDT64AF BDT64C BDT65 BDT65A BDT64A 7Z66 BDT64B BDT65C

    BOT65C

    Abstract: 65AF BDT64AF BDT64BF BDT64CF BDT64F BDT65AF BDT65BF BDT65CF BDT65F
    Text: BDT65F; BDT65AF bDT65BF; BDT65CF J SILICON DARLINGTON POWER TRANSISTORS NPIM silicon darlington power transistors in a SOT 186 envelope w ith an electrically insulated mounting base. The devices are designed fo r audio o u tp u t stages and general am plifier and switching applications.


    OCR Scan     		PDF BDT65F; BDT65AF BDT65BF; BDT65CF BDT64F, BDT64AF, BDT64BF BDT64CF. BDT65F OT186. BOT65C 65AF BDT64AF BDT64CF BDT64F BDT65AF BDT65BF BDT65CF

    BDT65

    Abstract: bot65a BDT64 BDT64A BDT64B BDT64C BDT65B 5A pnp to 220
    Text: J BDT65; 65A BDT65B; 65C ^ SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit fo r audio output stages and general purpose am plifier and switching applications. T 0-22 0 plastic envelope. PNP complements are


    OCR Scan     		PDF BDT65; BDT65B; T0-220 BDT64; BDT64A; BDT64B BDT64C. BDT65 T0-220. 7Z82329 bot65a BDT64 BDT64A BDT64C BDT65B 5A pnp to 220