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    AQV41 Price and Stock

    Panasonic Electronic Components AQV414SX

    SSR RELAY SPST-NC 100MA 0-400V
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    DigiKey AQV414SX Cut Tape 3,706 1
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    AQV414SX Digi-Reel 3,706 1
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    AQV414SX Reel 3,000 1,000
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    Panasonic Electronic Components AQV414S

    SSR RELAY SPST-NC 100MA 0-400V
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    DigiKey AQV414S Tube 1,494 1
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    Onlinecomponents.com AQV414S 1,821
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    TTI AQV414S Tube 75
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    Master Electronics AQV414S 1,821
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    Panasonic Electronic Components AQV410EHA

    SSR RELAY SPST-NC 130MA 0-350V
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    DigiKey AQV410EHA Tube 1,221 1
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    Avnet Americas AQV410EHA 14 Weeks 50
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    Mouser Electronics AQV410EHA 476
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    Panasonic Electronic Components AQV414EHAX

    SSR RELAY SPST-NC 120MA 0-400V
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    DigiKey AQV414EHAX Cut Tape 1,016 1
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    AQV414EHAX Digi-Reel 1,016 1
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    AQV414EHAX Reel 1,000 1,000
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    Panasonic Electronic Components AQV414AZ

    SSR RELAY SPST-NC 120MA 0-400V
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    DigiKey AQV414AZ Digi-Reel 907 1
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    AQV414AZ Cut Tape 907 1
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    Avnet Americas AQV414AZ 14 Weeks 1,000
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    Newark AQV414AZ Bulk 1,000
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    Onlinecomponents.com AQV414AZ
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    Bristol Electronics AQV414AZ 89
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    Quest Components AQV414AZ 1,807
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    AQV414AZ 71
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    AQV41 Datasheets (84)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AQV410 Panasonic PhotoMOS RELAYS Original PDF
    AQV410E NEC Optocoupler & Solid State Relay Cross Reference Guide Original PDF
    AQV410EA NEC Optocoupler & Solid State Relay Cross Reference Guide Original PDF
    AQV410EAX NEC Optocoupler & Solid State Relay Cross Reference Guide Original PDF
    AQV410EAZ NEC Optocoupler & Solid State Relay Cross Reference Guide Original PDF
    AQV410EH Panasonic Solid State Relay (with MOSFET Output) 6pin DIP (Form B, Normally-Closed) Original PDF
    AQV410EH Panasonic GU (General Use)-E Type (1-Channel (Form B) Type) PhotoMOS RELAY Original PDF
    AQV410EH Panasonic PhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Through hole terminal. Tube packing style. Original PDF
    AQV410EHA Panasonic Solid State Relay (with MOSFET Output) 6pin DIP (Form B, Normally-Closed) Original PDF
    AQV410EHA Panasonic PhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Surface-mount terminal. Tube packing style. Original PDF
    AQV410EHA Panasonic GU (General Use)-E Type (1-Channel (Form B) Type) PhotoMOS RELAY Original PDF
    AQV410EHAX Panasonic Solid State Relay (with MOSFET Output) 6pin DIP (Form B, Normally-Closed) Original PDF
    AQV410EHAX Panasonic GU (General Use)-E Type (1-Channel (Form B) Type) PhotoMOS RELAY Original PDF
    AQV410EHAX Panasonic PhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Surface-mount terminal. Tape and reel packing style. Picked from the 1/2/3-pin side Original PDF
    AQV410EHAZ Panasonic Solid State Relays, Relays, RELAY OPTO SPST 130MA 6 SMD T/R Original PDF
    AQV410EHAZ Panasonic PhotoMOS relay, GU (general use) E-type [1-channel (form B) type]. AC/DC type. I/O isolation: reanforced 5,000 VAC. Output rating: load voltage 350 V, load current 130 mA. Surface-mount terminal. Tape and reel packing style. Picked from the 4/5/6-pin side Original PDF
    AQV410EHAZ Panasonic GU (General Use)-E Type (1-Channel (Form B) Type) PhotoMOS RELAY Original PDF
    AQV412EH Panasonic Electric Works Relays - Solid State Relays - SSR RELAY SPST-NC 550MA 0-60V Original PDF
    AQV412EHA Panasonic Solid State Relays, Relays, PHOTOMOS(MOS FET) RELAY Original PDF
    AQV412EHAX Panasonic Solid State Relays, Relays, PHOTOMOS(MOS FET) RELAY Original PDF

    AQV41 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AQV412

    Abstract: 414EH AQV414EAZ AQV414 AQV410
    Text: GU-E 1 Form B AQV414E, AQV41EH VDE (AQV412EH) VDE TESTING (Standard type) Normally closed DIP6-pin economic type with reinforced insulation (AQV410EH, 414EH) (AQV410EH, 414EH) (Reinforced type) GU-E 1 Form B (AQV414E, AQV41EH) AQV414E, FEATURES 3.9


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    PDF AQV414E, AQV41EH) AQV412EH) AQV410EH, 414EH) AQV412 414EH AQV414EAZ AQV414 AQV410

    AQV414

    Abstract: AQV414A AQV414AX AQV414E AQV414EA AQV414EH AQV414EHA LR26550
    Text: AQV41❍ PhotoMOS RELAYS GU General Use Type 1-Channel (Form B) Type FEATURES UL File No.: E43149 CSA File No.: LR26550 3. High sensitivity, low ON resistance Can control a maximum 0.12 A load current with a 5 mA input current. Low ON resistance of 50 Ω (AQV414E).


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    PDF AQV41r E43149 LR26550 AQV414E) IEC950 AQZ105 AQZ205 AQZ107 AQZ207 AQV414 AQV414A AQV414AX AQV414E AQV414EA AQV414EH AQV414EHA LR26550

    414EH

    Abstract: AQV412EHA AQV412 AQV410EH AQV412EH AQV414E AQV414EA AQV414EAX AQV414EH AQV410
    Text: GU-E 1 Form B AQV414E, AQV41PEH VDE VDE TESTING (AQV412EH) (Standard type) Normally closed DIP6-pin economic type with reinforced insulation (AQV410EH, 414EH) (AQV410EH, 414EH) (Reinforced type) GU-E 1 Form B (AQV414E, AQV41PEH) FEATURES 1. High cost-performance type of


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    PDF AQV414E, AQV41 AQV412EH) AQV410EH, 414EH) AQV410EH 414EH AQV412EHA AQV412 AQV412EH AQV414E AQV414EA AQV414EAX AQV414EH AQV410

    smoke detector schematic diagrams

    Abstract: DW-AS-603-M12 schematic diagram dc to ac converter ultrasonic range meter IC electromagnetic relay HOW TO DRIVE SSR USING MOSFET DRIVER triac drive circuit pulse transformer Transistors Diodes smd e2 5 pins relay pin diagram convertor DC input 24 v output 5 v 2A
    Text: AQV41❍ PhotoMOS RELAYS GU General Use Type 1-Channel (Form B) Type FEATURES UL File No.: E43149 CSA File No.: LR26550 3. High sensitivity, low ON resistance Can control a maximum 0.12 A load current with a 5 mA input current. Low ON resistance of 50 Ω (AQV414E).


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    PDF AQV41r E43149 LR26550 AQV414E) IEC950 AQZ105 AQZ205 AQZ107 AQZ207 smoke detector schematic diagrams DW-AS-603-M12 schematic diagram dc to ac converter ultrasonic range meter IC electromagnetic relay HOW TO DRIVE SSR USING MOSFET DRIVER triac drive circuit pulse transformer Transistors Diodes smd e2 5 pins relay pin diagram convertor DC input 24 v output 5 v 2A

    smoke detector schematic diagrams

    Abstract: diagram 3 phase heater schematic diagram ac-dc supply smoke sensor schematic Transistors Diodes smd e2 schematic diagram heater ultrasonic Phase Frequency detector AQS610TS AQV410EH AQV410EHA
    Text: AQV410EH PhotoMOS RELAYS GU General Use -E Type 1-Channel (Form B) Type FEATURES 8.8 .346 1. Low on resistance for normallyclosed type This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method.


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    PDF AQV410EH EN41003, smoke detector schematic diagrams diagram 3 phase heater schematic diagram ac-dc supply smoke sensor schematic Transistors Diodes smd e2 schematic diagram heater ultrasonic Phase Frequency detector AQS610TS AQV410EH AQV410EHA

    Untitled

    Abstract: No abstract text available
    Text: GU-E 1 Form B AQV414E, AQV41EH VDE (AQV412EH) VDE (Standard type) Normally closed DIP6-pin economic type with reinforced insulation (AQV410EH, 414EH) (AQV410EH, 414EH) (Reinforced type) GU-E 1 Form B (AQV414E, AQV41EH) AQV414E, FEATURES 3.9 .154 6.4


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    PDF AQV414E, AQV41ï AQV412EH) AQV410EH, 414EH)

    XCA111

    Abstract: LCA111E xca111l LCA111 PFA113A XCA110 PFA122A okita Aromat relays PFA141A
    Text: High-Voltage Solid State Relays Cross Reference† Aromat Matsushita Infineon Aromat (Matsushita) Infineon CP Clare Infineon AQV101 LH1517AT AQV414A LH1501AAB LCA142/E LH1510AT AQV101A LH1517AAB AQW214 LH1550AT1 LH1517AT LH1520AB LH1526AB LCA143 AQV102 LCA143E


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    PDF AQV101 LH1517AT AQV414A LH1501AAB LCA142/E LH1510AT AQV101A LH1517AAB AQW214 LH1550AT1 XCA111 LCA111E xca111l LCA111 PFA113A XCA110 PFA122A okita Aromat relays PFA141A

    AQV414

    Abstract: AQV414A AQV414AX AQV414AZ
    Text: ✷❉o❏oMO✺.❃ook ✷❂❈❆ ✬✩ ✻❉❑❍•❅❂❖, M❂❍❄❉ ✥✩, ✥✣✣✬ ✥:✥✤ ✷M GU 1 Form B AQV414 Normally closed 6-pin type of 400V load voltage GU 1 Form B (AQV414) FEATURES 3.9 .154 6.4 .252 8.8 .346 3.6 .142


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    PDF AQV414) AQV414 AQV414A AQV414AX AQV414AZ

    414EH

    Abstract: AQV410EH AQV412EH AQV412EHA AQV414E AQV414EA AQV414EH AQV412
    Text: ✷❉o❏oMO✺.❃ook ✷❂❈❆ ✤✧✣ ✻❉❑❍•❅❂❖, M❂❍❄❉ ✥✩, ✥✣✣✬ ✥:✥✤ ✷M GU-E 1 Form B AQV414E, AQV41❍EH VDE (AQV412EH) VDE TESTING (Standard type) Normally closed DIP6-pin economic type with reinforced insulation


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    PDF AQV414E, AQV41EH) AQV412EH) AQV410EH, 414EH) 414EH AQV410EH AQV412EH AQV412EHA AQV414E AQV414EA AQV414EH AQV412

    RELAY

    Abstract: AQV414 AQV414A
    Text: AQV414 / AQV414A HIGH VOLTAGE, PHOTO MOS RELAY 65 Shark River Road, Neptune, New Jersey 07753-7423 Tel: 732-922-6333 Fax: 732-922-6363 E-Mail: [email protected] 65 Shark River Road, Neptune, New Jersey 07753-7423 Tel: 732-922-6333 Fax: 732-922-6363 E-Mail: [email protected]


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    PDF AQV414 AQV414A RELAY AQV414A

    AQV414

    Abstract: AQV414A AQV414AX AQV414AZ Panasonic RELAY Cross Reference
    Text: GU 1 Form B AQV414 Normally closed 6-pin type of 400V load voltage GU 1 Form B (AQV414) FEATURES 1. Low on-resistance (typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method.


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    PDF AQV414) aqv414: 140509J AQV414 AQV414A AQV414AX AQV414AZ Panasonic RELAY Cross Reference

    Untitled

    Abstract: No abstract text available
    Text: GU PhotoMOS AQV414S GU PhotoMOS (AQV414S) GU (General Use) Type SOP Series [1-Channel (Form B) Type] (DIP) 4.4 .173 6.3 .248 (SOP) Approx. 25% 2.1 .083 Volume mm inch Approx. 50% 1 6 2 5 3 4 Footprint 2. Low on resistance (Max. 50 Ω) at 400 V for normally-closed type


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    PDF AQV414S)

    Untitled

    Abstract: No abstract text available
    Text: GU PhotoMOS AQV414 GU PhotoMOS (AQV414) DIP (1 Form B) 6-pin type. Controls load voltage 400V. FEATURES 6.4 .252 8.8 .346 1. Low on resistance for normallyclosed type This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method.


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    PDF AQV414)

    Untitled

    Abstract: No abstract text available
    Text: Standard type TESTING VDE (Reinforced type) GU-E PhotoMOS (AQV414E, AQV41❍EH) General use and economy type. DIP (1 Form B) 6-pin type. Reinforced insulation 5,000V type. ; ; 4. Low-level off state leakage current The SSR has an off state leakage current


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    PDF AQV414E, AQV41EH) AQV414E) EN41003, EN60950 AQV414EH AQV410EH AQV410EH AQV414E

    AQV414S

    Abstract: AQV414SX AQV414SZ
    Text: ✷❉o❏oMO✺.❃ook ✷❂❈❆ ✬✥ ✻❉❑❍•❅❂❖, M❂❍❄❉ ✥✩, ✥✣✣✬ ✥:✥✤ ✷M GU SOP 1 Form B AQV414S Normally closed SOP6-pin type of 400V load voltage GU SOP 1 Form B (AQV414S) FEATURES 6.3 .248 4.4 .173 2.1 .083


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    PDF AQV414S) AQV414S AQV414SX AQV414SZ

    Untitled

    Abstract: No abstract text available
    Text: GU SOP 1 Form B AQV414S Normally closed SOP6-pin type of 400V load voltage GU SOP 1 Form B (AQV414S) FEATURES 6.3 .248 4.4 .173 2.1 .083 mm inch 1 1. Miniature SOP6-pin package The device comes in a small SOP measuring (W) 4.4 x (L) 6.3 ×(H) 2.1 mm (W) .173× (L) .248×(H) .083 inch approx.


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    PDF AQV414S) ASCTB139E 201201-T

    414EH

    Abstract: AQV410EH AQV412EH AQV414E AQV414EA AQV414EAX AQV414EAZ
    Text: GU-E PhotoMOS AQV414E, AQV41❍EH VDE TESTING (AQV412EH) (Standard type) General use and economy type. DIP (1 Form B) 6-pin type. Reinforced insulation 5,000V type. 6.4 .252 8.8 .346 3.9 .154 6.4 .252 8.8 .346 3.6 .142 mm inch 6 2 5 3 4 Cross section of the normally-closed type of


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    PDF AQV414E, AQV41EH) AQV412EH) AQV410EH AQV412EH 414EH AQV412EH AQV414E AQV414EA AQV414EAX AQV414EAZ

    AQV414S

    Abstract: AQV414SX AQV414SZ
    Text: GU SOP 1 Form B AQV414S Normally closed SOP6-pin type of 400V load voltage GU SOP 1 Form B (AQV414S) FEATURES 6.3 .248 4.4 .173 2.1 .083 mm inch 1 1. Miniature SOP6-pin package The device comes in a small SOP measuring (W) 4.4 x (L) 6.3 ×(H) 2.1 mm (W) .173× (L) .248×(H) .083 inch approx.


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    PDF AQV414S) aqv414s: 140509J AQV414S AQV414SX AQV414SZ

    AQV412

    Abstract: 414EH AQV410EH AQV412EH AQV414E AQV414EA AQV414EAX AQV414EAZ
    Text: GU-E PhotoMOS AQV414E, AQV41❍EH VDE TESTING (AQV412EH) (Standard type) General use and economy type. DIP (1 Form B) 6-pin type. Reinforced insulation 5,000V type. 6.4 .252 8.8 .346 3.9 .154 6.4 .252 8.8 .346 3.6 .142 mm inch 1 6 2 5 3 4 (Reinforced type)


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    PDF AQV414E, AQV41EH) AQV412EH) AQV410EH) AQV410EH AQV414EH AQV412EH AQV414E AQV412 414EH AQV412EH AQV414E AQV414EA AQV414EAX AQV414EAZ

    Untitled

    Abstract: No abstract text available
    Text: GU 1 Form B AQV414 Normally closed 6-pin type of 400V load voltage GU 1 Form B (AQV414) AQV414 FEATURES 8.8 .346 3.9 .154 6.4 .252 8.8 .346 3. High sensitivity and low onresistance Can control max. 0.15 A load current with 5 mA input current. 4. Low-level off state leakage current


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    PDF AQV414) AQV414 aqv414: 010611J

    Untitled

    Abstract: No abstract text available
    Text: Standard type TESTING VDE (Reinforced type) GU-E PhotoMOS (AQV414E, AQV41❍EH) General use and economy type. DIP (1 Form B) 6-pin type. Reinforced insulation 5,000V type. ; ; 4. Low-level off state leakage current The SSR has an off state leakage current


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    PDF AQV414E, AQV41EH) AQV414E) EN41003, EN60950 AQV414EH AQV410EH AQV410EH AQV414E

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    Abstract: No abstract text available
    Text: GU PhotoMOS AQV414 DIP (1 Form B) 6-pin type. Controls load voltage 400V. FEATURES 6.4 .252 8.8 .346 1. Low on resistance for normallyclosed type This has been realized thanks to the builtin MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method.


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    PDF AQV414) nais relay cross reference

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    Abstract: No abstract text available
    Text: GU PhotoMOS AQV414 DIP (1 Form B) 6-pin type. Controls load voltage 400V. FEATURES 6.4 .252 8.8 .346 1. Low on resistance for normallyclosed type This has been realized thanks to the builtin MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method.


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    PDF AQV414)

    Untitled

    Abstract: No abstract text available
    Text: AQV410 PhotoMOS RELAYS GU General Use Type 1-Channel (Form B) Type FEATURES UL File No.: E43149 CSA File No.: LR26550 1. Low on resistance fo r normallyclosed type This has been realized thanks to the built-in MOSFET processed by our pro­ prietary method, DSD (Double-diffused


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    PDF AQV410 AQV414E) IEC950 E43149 LR26550