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Microchip Technology Inc APT80GP60B2G IGBT PT 600V 100A TMAX
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT80GP60B2G	Tube			30	1 - 10 - 100 $23.12 1000 $23.12 10000 $23.12	Buy Now
Avnet Americas	APT80GP60B2G	Tube		26 Weeks	30	1 $21.6482 10 $21.6482 100 $18.0765 1000 $18.84804 10000 $18.84804	Buy Now
Mouser Electronics	APT80GP60B2G					1 $23.12 10 $23.12 100 $23.12 1000 $23.12 10000 $23.12	Get Quote
Newark	APT80GP60B2G	Bulk			30	1 $23.12 10 $23.12 100 $19.98 1000 $18.78 10000 $18.78	Buy Now
Microchip Technology Inc	APT80GP60B2G	Tube		26 Weeks		1 $23.12 10 $23.12 100 $19.98 1000 $18.32 10000 $17.73	Buy Now

Onlinecomponents.com	APT80GP60B2G					1 $22.09 10 $20.3 100 $18.54 1000 $17.99 10000 $17.99	Buy Now
Bristol Electronics	APT80GP60B2G		41			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	APT80GP60B2G				1	1 $33.46 10 $26.61 100 $26.61 1000 $26.61 10000 $26.61	Get Quote
NAC	APT80GP60B2G	Tube			16	1 $21.46 10 $21.46 100 $19.76 1000 $18.32 10000 $18.32	Buy Now
Master Electronics	APT80GP60B2G					1 $22.09 10 $20.3 100 $18.54 1000 $17.99 10000 $17.99	Buy Now

APT80GP60B2 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT80GP60B2		Advanced Power Technology	POWER MOS 7 IGBT		Original	PDF
APT80GP60B2		Microsemi	Insulated Gate Bipolar Transistor-PT High Speed		Original	PDF
APT80GP60B2G		Microchip Technology	IGBT 600V 100A 1041W TMAX		Original	PDF

APT80GP60B2 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: APT80GP60B2 600V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency	Original	PDF	APT80GP60B2
APT80GP60B2 Abstract: No abstract text available Text: APT80GP60B2 600V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency	Original	PDF	APT80GP60B2 APT80GP60B2
APT80GP60B2 Abstract: No abstract text available Text: APT80GP60B2 600V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency	Original	PDF	APT80GP60B2 APT80GP60B2
APT80GP60B2 Abstract: No abstract text available Text: APT80GP60B2 600V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency	Original	PDF	APT80GP60B2 APT80GP60B2
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	PDF	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
catalog mosfet Transistor smd Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance	Original	PDF
sot-227 footprint Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.	Original	PDF
APT100GF60LR Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of	Original	PDF
600 volt mosfet Abstract: 1200 volt mosfet TO247 package dissipation 125OC APT13GP120B APT13GP120K APT15GP60K APT35GP120B2D2 APT40GP60B2D1 MIL-PRF19500 Text: Product Profile Advanced Power Technology New Power MOS 7 IGBTs for SMPS Applications 600 Volt Size 6 - APT40GP60B2D1 Product Description Higher Threshold Voltage and Reduced Miller Capacitance - this provides for increased noise and spurious turn-on immunity and eliminates the	Original	PDF	APT40GP60B2D1 O-247 APT25GP120B2D1 APT35GP120B2D2 APT45GP120B2D2 APT50GP60B2D2 APT65GP60L2D2 264-MAXTM 600 volt mosfet 1200 volt mosfet TO247 package dissipation 125OC APT13GP120B APT13GP120K APT15GP60K APT35GP120B2D2 APT40GP60B2D1 MIL-PRF19500