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    Untitled

    Abstract: No abstract text available
    Text: APT501R1GN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)6.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)


    Original     		PDF APT501R1GN

    BAVP

    Abstract: APT5085/501R1BN
    Text: AD VA N C E D PO WE R T E C H N O L O G Y blE D 0 2 37 ^0 ^ 0000 7^ 7 DD3 IAVP ADVANCED P o w er Te c h n o l o g y 9 O D O s ,1 »TM POWER MOS IV APT5085GN APT4585GN APT501R1GN APT451R1GN 500V 7.0A 0.85Q 450V 7.0A 0.85Q 500V 6.5A 1.10Q 450V 6.5A 1.10ß


    OCR Scan     		PDF APT5085GN APT4585GN APT501R1GN APT451R1GN 4585GN 5085GN 451R1GN RGURE11, O-257AA BAVP APT5085/501R1BN

    APT1004RGN

    Abstract: No abstract text available
    Text: APT HERMETIC MOSFET PRODUCTS BV DSS Volts 1000 800 600 500 4UC 1000 800 R ds o n Ohms lD(Cont.) CiSS(pF) Qg(nC) A PT New Product Package Am ps Watts Typ Typ Part No. Comments Style 1.100 1.300 9.5 250 2460 90 APT1001R1HN 90 250 2460 90 APT1001R3HN 0.750


    OCR Scan     		PDF APT5011AFN APT40M 80AFN APT1004RGN