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Microchip Technology Inc APT44GA60BD30 IGBT PT 600V 78A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT44GA60BD30	Tube			80	1 - 10 - 100 $7.02 1000 $7.02 10000 $7.02	Buy Now
Avnet Americas	APT44GA60BD30	Tube		26 Weeks	80	1 $6.8796 10 $6.8796 100 $5.85 1000 $5.79 10000 $5.79	Buy Now
Mouser Electronics	APT44GA60BD30					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	APT44GA60BD30	Bulk			80	1 $7.02 10 $7.02 100 $6.06 1000 $5.69 10000 $5.69	Buy Now
Future Electronics	APT44GA60BD30				80	1 - 10 - 100 $6.08 1000 $6.08 10000 $6.08	Buy Now

Microchip Technology Inc	APT44GA60BD30	Tube		26 Weeks		1 $7.02 10 $7.02 100 $6.06 1000 $5.55 10000 $5.37	Buy Now
TME	APT44GA60BD30				1	1 $10.17 10 $8.09 100 $8.09 1000 $8.09 10000 $8.09	Get Quote
NAC	APT44GA60BD30	Tube			54	1 $6.71 10 $6.71 100 $6.08 1000 $5.56 10000 $5.56	Buy Now
Microchip Technology Inc APT44GA60BD30C IGBT 600V 78A 337W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT44GA60BD30C	Tube			30	1 - 10 - 100 $5.514 1000 $5.514 10000 $5.514	Buy Now
Microsemi Corporation APT44GA60BD30 Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	APT44GA60BD30		1,920			1 - 10 - 100 - 1000 - 10000 -	Get Quote

APT44GA60BD30 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT44GA60BD30		Microsemi	Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 44;		Original	PDF
APT44GA60BD30C		Microsemi	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 78A 337W TO247		Original	PDF

APT44GA60BD30 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
APT44GA60B Abstract: APT44GA60BD30 APT44GA60SD30 MIC4452 SD30 Text: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	PDF	APT44GA60BD30 APT44GA60SD30 APT44GA60B APT44GA60BD30 APT44GA60SD30 MIC4452 SD30
Untitled Abstract: No abstract text available Text: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT FEATURES APT44GA60SD30C TO -24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise	Original	PDF	APT44GA60BD30C APT44GA60SD30C
474J Abstract: No abstract text available Text: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	PDF	APT44GA60BD30 APT44GA60SD30 474J
Untitled Abstract: No abstract text available Text: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	PDF	APT44GA60BD30 APT44GA60SD30
APT44GA60BD30C Abstract: Fast Recovery Bridge Rectifier, 60A, 600V APT44GA60SD30C APT44GA60B MIC4452 rectifier bridge 300v 30a Text: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is TO APT44GA60SD30C -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise	Original	PDF	APT44GA60BD30C APT44GA60SD30C APT44GA60BD30C Fast Recovery Bridge Rectifier, 60A, 600V APT44GA60SD30C APT44GA60B MIC4452 rectifier bridge 300v 30a
600v 30a IGBT Abstract: Fast Recovery Bridge Rectifier, 60A, 600V apt30gt60 APT30GT60BR APT44GA60BD30 MIC4452 fast recovery diode trr Pt Text: APT44GA60BD30 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low	Original	PDF	APT44GA60BD30 EMI244) 600v 30a IGBT Fast Recovery Bridge Rectifier, 60A, 600V apt30gt60 APT30GT60BR APT44GA60BD30 MIC4452 fast recovery diode trr Pt
Untitled Abstract: No abstract text available Text: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise	Original	PDF	APT44GA60BD30C APT44GA60SD30C
SP6-P Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.	Original	PDF	10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
smps 1000W Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain	Original	PDF	des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
SOT-227 lead frame Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic	Original	PDF	MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
LE79Q2281 Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572 Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security	Original	PDF
Untitled Abstract: No abstract text available Text: Solar Solutions Fllex Diodes Dio ode des s Flex Semiconductor Inverter Modules The IDEAL Solar Bypass Solution Discrete Disc Di s re r Components TM LX2400 The IDEAL Solar Bypass Solution TM • Negligible Heat Generation – CoolRUNTM Technology - Less than 10°C rise at 10A	Original	PDF	LX2400 LX2400â
VRF2933FL Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301 Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system	Original	PDF	MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301