APT4030BN
Abstract: APT 4030BN APT4040BN 4030BN APT3530BN
Text: A d van ced P o w er Te c h n o l o g y c O D APT4030BN APT3530BN APT4040BN APT3540BN O s POWER MOS IV 400V 350V 400V 350V 18.5 A 18.5 A 16.0A 16.0A 0.30Q 0.3012 0.40Q 0.40Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.
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APT4030BN
APT3530BN
APT4040BN
APT3540BN
3530BN
4030BN
3540BN
4040BN
APT4030/3530/4040/3540BN
O-247AD
APT 4030BN
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4030BN
Abstract: apt4030bn t4030 APT 4030BN
Text: ADVANCED POW ER Te c h n o l o g y O D APT4030BN APT3530BN APT4040BN APT3540BN Ô s POWER MOS IVe 400V 350V 400V 350V 0.3012 0.300 0.40Q 0.4012 18.5A 18.5A 16.0A 16.0A N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tr = 25°C unless otherwise specified.
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APT4030BN
APT3530BN
APT4040BN
APT3540BN
3530BN
4030BN
3540BN
4040BN
O-247AD
QQG14b3
t4030
APT 4030BN
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diode RP 4040
Abstract: APT4040B APT4030 j0501
Text: ADVANCED POW ER Te c h n o l o g y q O D r APT4030BN APT3530BN APT4040BN APT3540BN Ô S ¡5 WER MOS m 400V 350V 400V 350V 18.5A 18.5A 16.0A 16.0A 0.300 0.30Q 0.40Q 0.40Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T c = 25°C unless otherwise specified.
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APT4030BN
APT3530BN
APT4040BN
APT3540BN
3530BN
4030BN
3540BN
4040BN
APT4030/3530/4040/3540BN
APT4030/4040BN
diode RP 4040
APT4040B
APT4030
j0501
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APT901RBN
Abstract: apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT1003R5BN APT3520BN APT1001RBN APT1002RBN
Text: ADVANCED POWER TECHNOLOGY C APT PART N U M BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN A PT8090BN APT801R2BN A PT801R4BN APT802RBN A PT802R4BN APT7575BN
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000027b
APT1001RBN
APT1001R2BN
APT1002RBN
APT1002R4BN
APT1003R5BN
APT1004R2BN
APT901RBN
APT901R2BN
APT902RBN
apt4530bn
APT801R2BN
APT4030BN
APT902R4BN
APT*1002R4BN
APT3520BN
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