APT10030L2VR Search Results

APT10030L2VR Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT10030L2VR		Advanced Power Technology	High voltage N-Channel enhancement mode power MOSFET		Original	PDF
APT10030L2VR		Microsemi	Power MOS V MOSFET		Original	PDF

APT10030L2VR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: APT10030L2VR 1000V 33A 0.300W POWER MOS V TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	PDF	APT10030L2VR O-264 O-264
APT10030L2VR Abstract: DSA003669 Text: APT10030L2VR 1000V 33A 0.300Ω POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	PDF	APT10030L2VR O-264 O-264 APT10030L2VR DSA003669
Untitled Abstract: No abstract text available Text: APT10030L2VR 0.300Ω 1000V 33A POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	PDF	APT10030L2VR O-264 O-264
Untitled Abstract: No abstract text available Text: APT10030L2VR 1000V 33A 0.300Ω POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	PDF	APT10030L2VR O-264 O-264
catalog mosfet Transistor smd Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance	Original	PDF
mj 1504 transistor equivalent Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208 Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as	Original	PDF
APT100GF60LR Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of	Original	PDF