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    AP30G100W Search Results

    AP30G100W Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AP30G100W Advanced Power Electronics N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: AP30G100W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES High speed switching Low Saturation Voltage VCE sat =3.0V@IC=30A Industry Standard TO-3P Package 1000V IC 30A C G C RoHS Compliant E


    Original     		PDF AP30G100W 30G100W

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP30G100W-HF-3 N-Channel Insulated Gate Bipolar Power Transistor VCES 1000V High Speed Switching C Low Saturation Voltage 30A IC Typical V CE sat = 3.0V at IC=30A G Industry-standard TO-3P C C RoHS-compliant, halogen-free


    Original     		PDF AP30G100W-HF-3 100oC AP30G100 30G100W

    transistor TO-3P Outline Dimensions

    Abstract: No abstract text available
    Text: AP30G100W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES 1000V 30A IC ▼ High speed switching ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A ▼ Industry Standard TO-3P Package C G G C ▼ RoHS Compliant


    Original     		PDF AP30G100W Fig11. 30G100W transistor TO-3P Outline Dimensions