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Abstract: No abstract text available
Text: AOD608 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD608 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other
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Text: AOD608 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD608 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other
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AOD608
Abstract: TRANSISTOR JC
Text: AOD608 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD608 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other
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AOD608
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Abstract: AOD608L
Text: AOD608 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD608 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other
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AON6704L
Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower
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MSOP-10
SC70-3
SC70-6
SC-89-3
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OD523
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AON6704L
AOZ1094
AOZ1094AI
AON7403
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AOZ1014AI
AOZ1212AI
AOZ1361
AON6414AL
Aoz1025
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AO4946
Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
Text: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22
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