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    AN821 Price and Stock

    onsemi MAN8210

    DISPLAY 7-SEG 0.8" SGL RED 18DIP
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    DigiKey MAN8210 Bulk 20
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    KEMET Corporation USEQGCDAN82100

    SENSOR NITROGEN DIOXIDE VOLT OUT
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    DigiKey USEQGCDAN82100 Bulk 1
    • 1 $101.04
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    Mouser Electronics USEQGCDAN82100 49
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    Newark USEQGCDAN82100 Bulk 3 1
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    USEQGCDAN82100 Bulk 1
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    Avnet Abacus USEQGCDAN82100 16 Weeks 50
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    AN FITTINGS/ELBOWS AN821-4

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    Allan Aircraft Supply Co LLC AN821-4J

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    AN FITTINGS/ELBOWS AN821-12D

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    AN821 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AN-821 National Semiconductor Programming the NS32FX200 for Use with a Contact Image Sensor (CIS) Scanner Original PDF
    AN821 STMicroelectronics NEW LAYOUT INSULATION REQUIREMENT Original PDF
    AN8212K Panasonic FDD Spindle Motor Controller Original PDF
    AN8212K Panasonic IC for FDD Spindle Motor Control Scan PDF

    AN821 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    vishay so-8 pin dimensions

    Abstract: PowerPAK SO-8 vishay power pak SO-8 package dimension so-8 vishay weight an821 Application Note SO8 Exposed PowerPAK 1212-8 Si4874DY Si7446DP
    Text: AN821 Vishay Siliconix PowerPAK SO-8 Mounting and Thermal Considerations Wharton McDaniel MOSFETs for switching applications are now available with die on resistances around 1 mΩ and with the capability to handle 85 A. While these die capabilities represent a major advance over what was available


    Original     		AN821 28-Feb-06 vishay so-8 pin dimensions PowerPAK SO-8 vishay power pak SO-8 package dimension so-8 vishay weight an821 Application Note SO8 Exposed PowerPAK 1212-8 Si4874DY Si7446DP PDF

    AN821

    Abstract: 16-BYTE 200B DK-2750 PIC16C622A PIC16F870 PIC16XXX
    Text: AN821 Advanced Encryption Standard Using the PIC16XXX Author: Caio Gubel Microchip Technology Inc. INTRODUCTION One of the most widely used block cipher algorithms is the Data Encryption Standard DES , adopted in 1977 by the American National Standards Institute (ANSI).


    Original     		AN821 PIC16XXX D-81739 DS00821A-page AN821 16-BYTE 200B DK-2750 PIC16C622A PIC16F870 PIC16XXX PDF

    Application Note AN821

    Abstract: 71622
    Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN821 PowerPAK SO-8 Mounting and Thermal Considerations by Wharton McDaniel MOSFETs for switching applications are now available with die on resistances around 1 m and with the capability to


    Original     		AN821 16-Mai-13 Application Note AN821 71622 PDF

    AN821

    Abstract: No abstract text available
    Text: AN821 APPLICATION NOTE NEW LAYOUT INSULATION REQUIREMENT INTRODUCTION In order to assume better level of security for telecommunication system users, some new rules have been published. This is the case of the IEC950 standard which dedicates one chapter to this subject. This kind


    Original     		AN821 IEC950 AN821 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC


    Original     		Si7456DP Si7456DP-T1-E3 Si7456DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive


    Original     		Si7846DP Si7846DP-T1-E3 Si7846DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SI7456DDP-T1-GE3

    Abstract: 2285b
    Text: New Product Si7456DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a VDS (V) RDS(on) () Max. 0.023 at VGS = 10 V 27.8 100 0.024 at VGS = 7.5 V 27.2 0.031 at VGS = 4.5 V 24 Qg (Typ.) 9.7 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm


    Original     		Si7456DDP Si7456DDP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 2285b PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7463ADP Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) () Max. ID (A) 0.0100 at VGS = - 10 V - 46 0.0135 at VGS = - 4.5 V - 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si7463ADP 2002/95/EC Si7463ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00100 at VGS = 10 V 60 0.00135 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification


    Original     		SiRA00DP 2002/95/EC SiRA00DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		SiR698DP 2002/95/EC SiR698DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SiR460D

    Abstract: SiR460DP siR460
    Text: New Product SiR460DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0047 at VGS = 10 V 40g 0.0061 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 16.8 nC • • • • Halogen-free According to IEC 61249-2-21 TrenchFET Gen III Power MOSFET


    Original     		SiR460DP SiR460DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SiR460D siR460 PDF

    SI7288

    Abstract: No abstract text available
    Text: New Product Si7288DP Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.019 at VGS = 10 V 20 0.022 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		Si7288DP 2002/95/EC Si7288DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI7288 PDF

    SIR662

    Abstract: No abstract text available
    Text: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 VDS (V) 60 Qg (Typ.) 30 nC PowerPAK SO-8 D S 6.15 mm S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View


    Original     		SiR662DP 2002/95/EC SiR662DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIR662 PDF

    SiR826DP

    Abstract: No abstract text available
    Text: New Product SiR826DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0048 at VGS = 10 V 60 0.0052 at VGS = 7.5 V 60 0.0065 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 27.9 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		SiR826DP 2002/95/EC SiR826DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SI7997Dp

    Abstract: No abstract text available
    Text: New Product Si7997DP Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () - 30 0.0055 at VGS = - 10 V - 60 0.0078 at VGS = - 4.5 V - 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si7997DP 2002/95/EC Si7997DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    sir158

    Abstract: No abstract text available
    Text: New Product SiR158DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60g 0.0023 at VGS = 4.5 V 60g VDS (V) 30 Qg (Typ.) 41.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		SiR158DP SiR158DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sir158 PDF

    si7272

    Abstract: No abstract text available
    Text: New Product Si7272DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0093 at VGS = 10 V 25 0.0124 at VGS = 4.5 V 25 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • PWM Optimized


    Original     		Si7272DP Si7272DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si7272 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7463DP Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.0092 at VGS = - 10 V - 18.6 0.014 at VGS = - 4.5 V - 15 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		Si7463DP 2002/95/EC Si7463DP-T1-E3 Si7463DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si7454DDP

    Abstract: No abstract text available
    Text: New Product Si7454DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () Max. ID (A) 0.033 at VGS = 10 V 21 0.036 at VGS = 7.5 V 20 0.047 at VGS = 4.5 V 17.7 Qg (Typ.) 6.1 nC APPLICATIONS • • • • PowerPAK SO-8


    Original     		Si7454DDP Si7454DDP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    sir878

    Abstract: SIR878ADP vishay siliconix 1999
    Text: New Product SiR878ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.014 at VGS = 10 V 40 0.0148 at VGS = 7.5 V 38 0.018 at VGS = 4.5 V 34 VDS (V) 100 Qg (Typ.) 13.9 nC • Halogen-free According to IEC 61249-2-21


    Original     		SiR878ADP 2002/95/EC SiR878ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sir878 vishay siliconix 1999 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR316DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0068 at VGS = 10 V 30g 0.0093 at VGS = 4.5 V 30g VDS (V) 25 Qg (Typ.) 7.4 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		SiR316DP 2002/95/EC SiR316DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic ICs for Motor AN8212K FDD Spindle Motor Controller • Overview Unit T h e A N 8212K is an integrated circuit in which 300/360 h — 1 2 .0 ± 0 .3 —*j 3.6 ± 0 .2 rpm s p e e d c h a n g e - o v e r fu n c tio n is a d d e d to th e A N 8210N K for F D D spindle motor.


    OCR Scan     		AN8212K 8212K 8210N 300/360rpm) 24-pin SDIP024-P-0500) 32flS5 PDF

    an8210

    Abstract: HP3314A Fdd spindle motor circuit 300 panasonic ceramic resonator AN8212K 8212K 100U NC12 360rpm Fdd spindle motor circuit
    Text: ICs fo r MOTOR CONTROL AN8212K AN8212K IC fo r F D D Spindle M otor C ontrol • O utline T h e AN8212K is an in te g rate d circu it in w hich 300/360 rpm U nit ! m m 12.0± 0.3 speed change-over function is added to the A N 8210NK for FDD spindle m otor.


    OCR Scan     		AN8212K AN8212K AN8210NK 300/360rpm) 24-Lead an8210 HP3314A Fdd spindle motor circuit 300 panasonic ceramic resonator 8212K 100U NC12 360rpm Fdd spindle motor circuit PDF

    Untitled

    Abstract: No abstract text available
    Text: ICs fo r MOTOR CONTROL AN8212K AN8212K IC for FDD Spindle Motor Control • Outline U n it ; m m T h e A N 8212K is a n in te g r a te d c ir c u it in w h ic h 300/360 rp m 12 .0 ± 0 . 3 sp e ed c h a n g e -o v e r fu n c tio n is a d d e d to th e A N 8 2 1 0 N K f o r


    OCR Scan     		AN8212K 8212K 300/360rpm 24-Lead PDF