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    Fairview Microwave Inc FMWAN1154

    SPCL WG ANTENNA 2.92MM JACK 18-4
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    DigiKey FMWAN1154 Bag 1
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    Newark FMWAN1154 Bulk 3 1
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    RS FMWAN1154 Bulk 3 Weeks 1
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    Pasternack Enterprises PEWAN1154

    Broadband Gain Horn Antenna, 18
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    DigiKey PEWAN1154 1
    • 1 $6061
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    Pasternack Enterprises US PEWAN1154 4 1
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    MISC AN115407

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    Quest Components AN115407 1,757
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    AN1154 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AN-1154 National Semiconductor Application Note 1154 COP8 FLASH ISP HANDBOOK - FLASHWIN Programmers Guide Original PDF
    AN1154 STMicroelectronics 8031-PSD DESIGN TUTORIAL Original PDF

    AN1154 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    an1171

    Abstract: EES3 IC 7414 datasheet A128C AN1154 8031 MICROCONTROLLER 8031 pin diagram application note for checksum calculation eeprom PROGRAMMING tutorial motorola 68hc11 applications note
    Text: AN1154 APPLICATION NOTE 8031 / M88 FLASH+PSD Design Tutorial This tutorial takes you step-by-step through the development cycle of a M88x3Fxx based design, from design entry, to programming the device. The first part of this tutorial shows how a M8813F1x can be used


    Original     		PDF AN1154 M88x3Fxx M8813F1x an1171 EES3 IC 7414 datasheet A128C AN1154 8031 MICROCONTROLLER 8031 pin diagram application note for checksum calculation eeprom PROGRAMMING tutorial motorola 68hc11 applications note

    pt100 pic

    Abstract: circuit diagram temperature measurement rtd rtd 2660 rtd temperature instrumentation amplifier circuit pt100 rtd spi AN1154 pt100 adc microchip rtd temperature instrumentation amplifier E1137E RTD SENSING CIRCUIT
    Text: AN1154 Precision RTD Instrumentation for Temperature Sensing SOLUTION Ezana Haile Microchip Technology Inc. This solution uses a common reference voltage to bias the RTD and the ADC which provides a ratio-metric relation between the ADC resolution and the RTD temperature resolution. Only one biasing resistor, RA, is


    Original     		PDF AN1154 DS01154A-page pt100 pic circuit diagram temperature measurement rtd rtd 2660 rtd temperature instrumentation amplifier circuit pt100 rtd spi AN1154 pt100 adc microchip rtd temperature instrumentation amplifier E1137E RTD SENSING CIRCUIT

    Untitled

    Abstract: No abstract text available
    Text: AN11546 BGA3022 - 1.2 GHz 18 dB gain CATV amplifier Rev. 1 — 16 September 2014 Application note Document information Info Content Keywords BGA3022, Evaluation board, CATV, Medium Power Abstract This application note describes the schematic and layout requirements


    Original     		PDF AN11546 BGA3022 BGA3022,

    N414

    Abstract: LM317 voltage regulator LM317 0 to 12 volts voltage regulator lm317 a 8 terminal LM317 adjustable voltage power supply using Lm317 X9C103 LM317 applications LM317 application note lm317 5V
    Text: Remotely Adjustable Voltage Regulators using XDCPs Application Note April 21, 2005 AN1154.0 Author: Applications Staff This note shows how an X9312 can be used to implement a remote, adjustable regulator. The LM317 is probably the most common adjustable three- terminal voltage regulator in


    Original     		PDF AN1154 X9312 LM317 X9312 4HC132 HC132 4HC13 N414 LM317 voltage regulator LM317 0 to 12 volts voltage regulator lm317 a 8 terminal adjustable voltage power supply using Lm317 X9C103 LM317 applications LM317 application note lm317 5V

    D47F

    Abstract: IRFH8311 PQFN footprint d020d
    Text: PD - 97735C IRFH8311PbF VDS Vgs max RDS on max 30 V ± 20 V 2.1 (@VGS = 10V) (@VGS = 4.5V) 3.2 Qg typ. 30 ID 50 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET m nC i PQFN 5X6 mm A Applications •Synchronous MOSFET for high frequency buck converters


    Original     		PDF 97735C IRFH8311PbF D47F IRFH8311 PQFN footprint d020d

    Untitled

    Abstract: No abstract text available
    Text: IRFH8316PbF HEXFET Power MOSFET VDS 30 ± 20 Vgs max RDS on max V V 2.95 (@VGS = 10V) (@VGS = 4.5V) 4.30 Qg typ 30.0 ID 50 (@Tc(Bottom) = 25°C) m nC i PQFN 5X6 mm A Applications •Synchronous MOSFET for high frequency buck converters Features and Benefits


    Original     		PDF IRFH8316PbF IRFH8316TRPBF IRFH8316TR2PBF 796mH,

    IRFH5250

    Abstract: IRFH5250TRPBF
    Text: PD -96265B IRFH5250PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID (@Tmb = 25°C) 25 V 1.15 mΩ 52 1.3 nC Ω 100 h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET


    Original     		PDF -96265B IRFH5250PbF IRFH5250 IRFH5250TRPBF

    dc brushed motor 60v

    Abstract: No abstract text available
    Text: PD - 97787 StrongIRFET™ IRFH7004PbF HEXFET Power MOSFET Applications l l l l l l l l l Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies


    Original     		PDF IRFH7004PbF TD-020D dc brushed motor 60v

    IRFHM792TRPBF

    Abstract: IRFHM792
    Text: PD - 96368A IRFHM792TRPbF IRFHM792TR2PbF VDS Vgs max RDS on max (@VGS = 10V) Qg typ 100 V ± 20 V 195 mΩ 4.2 ID 3.4 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET TOP VIEW D 7 D 8 D 6 D 5 S nC h A G S G D D D 1 S 2 G 3 S 4 G D D D PQFN Dual 3.3X3.3 mm Applications


    Original     		PDF 6368A IRFHM792TRPbF IRFHM792TR2PbF IRFHM792TR2PBF IRFHM792

    IRFHS8342

    Abstract: irfhs8342pbf IRFHS8342TRPBF
    Text: PD - 97596B IRFHS8342PbF HEXFET Power MOSFET VDS 30 V VGS max ±20 V RDS on max 16.0 mΩ (@VGS = 10V) T OP VIEW D 1 (@VGS = 4.5V) ID (@Tc(Bottom) = 25°C) 4.2 8.5 D D S G 3 G 5 D nC d D D D 2 Qg(typical) D 6 D 4 S D S S 2mm x 2mm PQFN A Applications • Control MOSFET for Buck Converters


    Original     		PDF 97596B IRFHS8342PbF D-020D IRFHS8342 irfhs8342pbf IRFHS8342TRPBF

    IRLH5036PBF

    Abstract: No abstract text available
    Text: IRLH5036PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 4.5V) Qg (typical) RG (typical) ID (@Tmb = 25°C) 60 V 5.5 mΩ 44 1.2 nC Ω h 100 A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications


    Original     		PDF IRLH5036PbF IRLH5036PBF

    irlhs6342pbf#2

    Abstract: No abstract text available
    Text: IRLHS6342PbF HEXFET Power MOSFET VDS 30 V VGS ±12 V RDS on max 15.5 mΩ (@VGS = 4.5V) Qg (typical) ID 11 (@TC (Bottom) = 25°C) 12 nC i A TOP VIEW 6 D D 1 D 2 G 3 D S D D D 5 D 4 S D D G S S 2mm x 2mm PQFN Applications • Charge and discharge switch for battery application


    Original     		PDF IRLHS6342PbF irlhs6342pbf#2

    Untitled

    Abstract: No abstract text available
    Text: IRFH5204PbF HEXFET Power MOSFET VDS 40 V RDS on max 4.3 mΩ Qg (typical) 43 nC RG (typical) 1.7 Ω (@VGS = 10V) ID 100 (@Tc(Bottom) = 25°C) h PQFN 5X6 mm A Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications


    Original     		PDF IRFH5204PbF

    Untitled

    Abstract: No abstract text available
    Text: FastIRFET IRFH4253DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS on max (@VGS = 4.5V) 4.60 1.45 m Qg (typical) 10 31 nC ID (@TC = 25°C) 35 35 A Applications  Control and Synchronous MOSFETs for synchronous buck converters


    Original     		PDF IRFH4253DPbF

    Untitled

    Abstract: No abstract text available
    Text: IRFH8325PbF HEXFET Power MOSFET VDS Vgs max RDS on max 30 V ± 20 V 5.0 (@VGS = 10V) (@VGS = 4.5V) 7.2 Qg typ 15 ID (@Tc(Bottom) = 25°C) 25 mΩ nC PQFN 5X6 mm i A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits


    Original     		PDF IRFH8325PbF IRFH8325TRPbF IRFH8325TR2PbF

    Untitled

    Abstract: No abstract text available
    Text: IRFH5215PbF HEXFET Power MOSFET VDS 150 V RDS on max 58 mΩ Qg (typical) 21 nC RG (typical) 2.3 Ω 27 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Primary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications


    Original     		PDF IRFH5215PbF IRFH5215TRPBF IRFH5215TR2PBF

    Untitled

    Abstract: No abstract text available
    Text: PSD8XXFX Flash in-system programmable ISP peripherals for 8-bit MCUs, 5 V Features • Flash in-system programmable (ISP) peripheral for 8-bit MCUs ■ Dual bank Flash memories – Up to 2 Mbit of primary Flash memory (8 uniform sectors, 32K x8) – Up to 256 Kbit secondary Flash memory (4


    Original     		PDF

    IRFHM830DTR2PBF

    Abstract: IRFHM830DTRPBF AN-1154 J-STD-020D IRFHM830
    Text: PD -96327A IRFHM830DPbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 30 V 4.3 mΩ 13 1.1 nC 40 (@Tc(Bottom) = 25°C) D 5 D Ω h 6 4 G 3 S D 7 2 S D 1 S 8 A 3.3mm x 3.3mm PQFN Applications • Synchronous MOSFET for Buck Converters


    Original     		PDF -96327A IRFHM830DPbF 409mH, IRFHM830DTR2PBF IRFHM830DTRPBF AN-1154 J-STD-020D IRFHM830

    IRFH5250TRPBF

    Abstract: irfh5250 IRFH5250TR2PBF AN-1154 IRFH5250PBF
    Text: PD -96265 IRFH5250PbF HEXFET Power MOSFET VDS 25 RDS on max 1.15 m 52 1.3 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) V : : h PQFN 5X6 mm A Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET


    Original     		PDF IRFH5250PbF IRFH5250TRPBF IRFH5250TR2PBF IRFH5250TRPBF irfh5250 IRFH5250TR2PBF AN-1154 IRFH5250PBF

    AN-1154

    Abstract: IRFH5250DTR2PBF IRFH5250DTRPBF inductor footprint
    Text: PD - 97453A IRFH5250DPbF HEXFET Power MOSFET VDS 25 V RDS on max 1.4 mΩ 0.6 V 27 ns (@VGS = 10V) VSD max (@IS = 5.0A) trr (typical) ID (@Tc(Bottom) = 25°C) 100 h PQFN 5X6 mm A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits


    Original     		PDF 7453A IRFH5250DPbF IRFH5250DTRPBF IRFH5250e AN-1154 IRFH5250DTR2PBF IRFH5250DTRPBF inductor footprint

    IRFH5301

    Abstract: AN-1154 IRFH5301TR2PBF IRFH5301TRPBF
    Text: PD -96276 IRFH5301PbF HEXFET Power MOSFET VDS 30 V RDS on max 1.85 mΩ 37 1.5 nC (@VGS = 10V) Qg (typical) RG (typical) ID 100 (@Tc(Bottom) = 25°C) Ω h PQFN 5X6 mm A Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for Buck Converters


    Original     		PDF IRFH5301PbF IRFH530ard 119mH, IRFH5301 AN-1154 IRFH5301TR2PBF IRFH5301TRPBF

    IRFH5010TR

    Abstract: IRFH5010TRPBF PQFN footprint mosfet 500V 50A IRFH5010 AN-1154 IRFH5010TR2PBF
    Text: PD -96297 IRFH5010PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 100 V 9.0 mΩ 65 1.2 nC 100 (@Tc(Bottom) = 25°C) Ω h PQFN 5X6 mm A Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors


    Original     		PDF IRFH5010PbF IRFH5010TRPBF IRFH5010TR2PBF 181mH, IRFH5010TR IRFH5010TRPBF PQFN footprint mosfet 500V 50A IRFH5010 AN-1154 IRFH5010TR2PBF

    IRFH5020PbF

    Abstract: AN-1154 IRFH5020TR2PBF IRFH5020TRPBF IRFH5020 PQFN footprint
    Text: PD -97428 IRFH5020PbF HEXFET Power MOSFET VDS 200 V RDS on max 55 m 36 1.9 nC 43 A (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) : : PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications


    Original     		PDF IRFH5020PbF IRFH5020PbF AN-1154 IRFH5020TR2PBF IRFH5020TRPBF IRFH5020 PQFN footprint

    Untitled

    Abstract: No abstract text available
    Text: PD - 97652B IRFH8330PbF VDS VGS max RDS on max 30 V ± 20 V 6.6 (@VGS = 10V) (@VGS = 4.5V) 9.9 Qg typ. 9.3 ID 25 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET m nC i PQFN 5X6 mm A Applications •Control MOSFET for high frequency buck converters Synchronous MOSFET for high frequency buck converters


    Original     		PDF 97652B IRFH8330PbF