Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    AGR21060E Search Results

    SF Impression Pixel

    AGR21060E Price and Stock

    Advanced Semiconductor Inc AGR21060EF

    RF MOSFET Transistors 2.11-2.17GHz13.5Watt Gain 14.5dB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics AGR21060EF
    • 1 -
    • 10 $74.66
    • 100 $69.8
    • 1000 $69.8
    • 10000 $69.8
    		Get Quote

    AGR21060E Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AGR21060E TriQuint Semiconductor 60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGR21060EF Agere Systems FET, 60W, 2.110GHz-2.170GHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGR21060EF Agere Systems 60 W, 2.110 GHz - 2.170 GHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGR21060EU Agere Systems FET, 60W, 2.110GHz-2.170GHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGR21060EU Agere Systems 60 W, 2.110 GHz - 2.170 GHz, N-Channel E-Mode, Lateral MOSFET Original PDF

    AGR21060E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AGR21060EF

    Abstract: AGERE AGR21060E AGR21060EU JESD22-C101A JESD22-A114B
    Text: Preliminary Product Brief November 2003 AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide


    Original     		PDF AGR21060E AGR21060E AGR21060EU AGR21060EF PB04-015RFPP PB03-096RFPP) AGR21060EF AGERE AGR21060EU JESD22-C101A JESD22-A114B

    AGR21060EF

    Abstract: 100B8R2JCA500X CDM 07 C14A JESD22-C101A R210 AGR21060E AGR21060EU C15B material sheet C15A
    Text: AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement-mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access


    Original     		PDF AGR21060E AGR21060E AGR21060EU AGR21060EF AGR21060EF 100B8R2JCA500X CDM 07 C14A JESD22-C101A R210 AGR21060EU C15B material sheet C15A

    ti c11b

    Abstract: No abstract text available
    Text: AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement-mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access


    Original     		PDF AGR21060E AGR21060EU AGR21060EF ti c11b

    AGR21060EF

    Abstract: AGR21060E AGR21060EU JESD22-A114
    Text: Preliminary Product Brief April 2003 AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (WCDMA), single and multicarrier class AB wireless


    Original     		PDF AGR21060E AGR21060E AGR21060EU AGR21060EF PB03-096RFPP PB03-071RFPP) AGR21060EF AGR21060EU JESD22-A114

    TGA2517

    Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
    Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint


    Original     		PDF cus937 TGA2517 TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125

    TGA2517

    Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
    Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4


    Original     		PDF

    AGRA10EM

    Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
    Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station


    Original     		PDF CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM