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Advanced Semiconductor Inc AGR19030EF RF MOSFET Transistors 930-960MHz 6Watt Gain 16dB
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Mouser Electronics	AGR19030EF					1 $47.96 10 $40.75 100 $36.75 1000 $35.44 10000 $35.44	Get Quote

AGR19030E Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AGR19030E		Agere Systems	30 W, 1930 MHz-1990MHz,PCS LDMOS RF POWER Transistor		Original	PDF
AGR19030E		TriQuint Semiconductor	30 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor		Original	PDF
AGR19030EF		Agere Systems	MOSFET		Original	PDF
AGR19030EF		Agere Systems	30 W, 1930 MHz - 1990 MHz, PCS LDMOS RF Power Transistor		Original	PDF
AGR19030EU		Agere Systems	MOSFET		Original	PDF

AGR19030E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Preliminary Product Brief May 2003 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19030E Hz--1990 AGR19030EU AGR19030EF PB03-111RFPP PB03-092RFPP)
CDM 82 Abstract: No abstract text available Text: Preliminary Product Brief April 2003 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal	Original	PDF	AGR19030E Hz--1990 AGR19030EU AGR19030EF PB03-092RFPP PB03-066RFPP) CDM 82
T491C Abstract: AGR19030XF 100B100JCA500X AGR19030EF JESD22-C101A j598 SEMICONDUCTOR J598 W1235 Text: Preliminary Data Sheet June 2004 AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19030EF Hz--1990 AGR19030EF DS04-224RFPP DS04-158RFPP) T491C AGR19030XF 100B100JCA500X JESD22-C101A j598 SEMICONDUCTOR J598 W1235
J56-1 Abstract: ep 55 transistor Text: AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19030EF Hz--1990 J56-1 ep 55 transistor
j561 Abstract: T491C AGR19030XF 100B100JCA500X AGR19030E AGR19030EF AGR19030EU JESD22-C101A 100B100 DSA0020680 Text: Preliminary Data Sheet April 2004 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19030E is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19030E Hz--1990 AGR19030E DS04-158RFPP DS04-076RFPP) j561 T491C AGR19030XF 100B100JCA500X AGR19030EF AGR19030EU JESD22-C101A 100B100 DSA0020680
Untitled Abstract: No abstract text available Text: Preliminary Product Brief November 2003 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19030E AGR19030E AGR19030EU AGR19030EF PB04-013RFPP PB03-111RFPP)
AGR19030XF Abstract: 100B100JCA500X AGR19030E AGR19030EF AGR19030EU JESD22-C101A Text: Preliminary Data Sheet March 2004 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19030E is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19030E Hz--1990 AGR19030E DS04-076RFPP PB04-013RFPP) AGR19030XF 100B100JCA500X AGR19030EF AGR19030EU JESD22-C101A
AGR19030XF Abstract: 100B100JCA500X AGR19030EF JESD22-C101A Text: AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19030EF Hz--1990 AGR19030EF AGR19030XF AGR18030F 12-digit AGR19030XF 100B100JCA500X JESD22-C101A
TGA2517 Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125 Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint	Original	PDF	cus937 TGA2517 TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
TGA2517 Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4	Original	PDF
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	PDF	CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM