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    A400TD Search Results

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    A400TD Price and Stock

    Vishay Semiconductors GA400TD25S

    IGBT MOD 250V 400A INT-A-PAK
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    Vishay Semiconductors VS-GA400TD60S

    IGBT MOD 600V 750A INT-A-PAK
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    Micron Technology Inc MTFDHBA400TDG-1AW4ZABYY

    SSD 400GB M.2 TLC NVME 3.3V
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    Newark MTFDHBA400TDG-1AW4ZABYY Bulk 10
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    Micron Technology Inc MTFDHBA400TDG-1AW1ZABYY

    SSD 400GB M.2 TLC NVME 3.3V
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    Newark MTFDHBA400TDG-1AW1ZABYY Bulk 10
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    Micron Technology Inc MTFDHBA400TDG-2AW1ZABYY

    SSD
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    A400TD Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: I , ,• I In te rn a tio n a l IQ R R ectifier PD -5.05S preliminary "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK G A400TD 60U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


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    PDF A400TD

    Untitled

    Abstract: No abstract text available
    Text: International I R Rectifi G f PD - 5.059B P R E LIM IN A R Y "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK A400TD60U Ultra-Fast Speed IGBT Features V c e s = 6 00 V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz In hard switching, >200


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    PDF GA400TD60U

    CY7C1011-20VC

    Abstract: No abstract text available
    Text: CY7C1011 1 2 8 K x 1 6 Static RAM BLE is LOW, then data from I/O pins (l/O 0 through l/0 7), is written into the location specified on the address pins (A 0 through A 16). If byte high enable (BHE) is LOW, then data from I/O pins (l/ 0 8 through l/0 15) is written into the location speci­


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    irf p 1806

    Abstract: No abstract text available
    Text: International Rectifier IÖR PD - 5.059B PRELIMINARY "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK A400TD60U Ultra-Fast Speed IGBT Featu res V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200


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    PDF GA400TD60U irf p 1806