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Catalog Datasheet	MFG & Type	PDF	Document Tags
2SK1902 Abstract: No abstract text available Text: 2SK1902 N- Channel MOS Silicon FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high speed switching. • Low voltage drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage	Original	PDF	2SK1902 O-220 990929TM2fXHD 2SK1902
2SJ271 Abstract: No abstract text available Text: 2SJ271 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • Low-voltage dreve. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage	Original	PDF	2SJ271 --100V --50V --10V --15A 990929TM2fXHD 2SJ271
2SJ406 Abstract: No abstract text available Text: 2SJ406 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • Low-voltage dreve. • Micaless package facilitating easy mounting. Absolute Maximum Ratings / Ta=25°C	Original	PDF	2SJ406 990929TM2fXHD 2SJ406
marking S139 Abstract: S139 Text: FSS139 Load S/W Applications TENTATIVE Features and Applications • Low ON-state resistance. • Ultrahigh-speed switching. • 2.5V drive. Absoulute Maximum Ratings / Ta=25°C Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current D.C ID	Original	PDF	FSS139 1200mm2 --10V 990929TM2fXHD-1/2 marking S139 S139