40HFL40S02
Abstract: 80SQ 80SQ035 80SQ040 80SQ045 IRFP460 D1297
Text: PD-2.047 rev. D 12/97 80SQ. SERIES SCHOTTKY RECTIFIER 8 Amp Description/Features Major Ratings and Characteristics The 80SQ axial leaded Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up
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IRFP460
40HFL40S02
40HFL40S02
80SQ
80SQ035
80SQ040
80SQ045
IRFP460
D1297
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50SQ080
Abstract: IRFP460 application 40HFL40S02 50SQ 50SQ100 IRFP460
Text: PD-2.060 rev. C 11/97 50SQ. SERIES SCHOTTKY RECTIFIER 5 Amp Description/Features Major Ratings and Characteristics The 50SQ. axial leaded Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up
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IRFP460
40HFL40S02
50SQ080
IRFP460 application
40HFL40S02
50SQ
50SQ100
IRFP460
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os TT 2222
Abstract: TT 2222 90SQ 40HFL40S02 90SQ035 90SQ040 90SQ045 IRFP460
Text: PD-2.222 rev. B 12/97 90SQ. SERIES SCHOTTKY RECTIFIER 9 Amp Description/Features Major Ratings and Characteristics The 90SQ axial leaded Schottky rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable
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IRFP460
40HFL40S02
os TT 2222
TT 2222
90SQ
40HFL40S02
90SQ035
90SQ040
90SQ045
IRFP460
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40HFL40S02
Abstract: 95SQ015 IRFP460
Text: PD-2.273 rev. A 12/97 95SQ015 SCHOTTKY RECTIFIER 9 Amp Description/Features Major Ratings and Characteristics Characteristics The 95SQ015 axial leaded Schottky rectifier has been optimized for ultra low forward voltage drop specifically for the ORing of parallel power supplies. The proprietary barrier
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95SQ015
95SQ015
IRFP460
40HFL40S02
40HFL40S02
IRFP460
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schottky barrier diode b22
Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
schottky barrier diode b22
FCH20U10
Schottky Diode B29
fcu20a40
10ERB20
niec FCHS10A12
FCQS10A065
EC30QSA045
FCHS10A12
fchs20a08
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FCH20U10
Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
FCH20U10
niec FCHS10A12
FCU20A40
FCU10UC30
FCQ10U06
FSF05B60
SA10QA03
fchs20a08
10ERB20
FCQS30A045
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supressors
Abstract: No abstract text available
Text: Silicon Avalanche Diodes 1500W Axial Leaded Transient Voltage Supressors RoHS LCE Series FEATURES • RoHS compliant • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • 1500W Peak Pulse Power capability with a 10/1000µs
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DO-201)
supressors
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1.5KE Series
Abstract: 22 axial pf LCE10A LCE11A LCE12A
Text: Silicon Avalanche Diodes 1500W Axial Leaded Transient Voltage Supressors RoHS LCE Series FEATURES 6 • RoHs compliant SILICON DIODE ARRAYS • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • 1500W Peak Pulse Power capability with a 10/1000µs
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DO-201)
1.5KE Series
22 axial pf
LCE10A
LCE11A
LCE12A
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Untitled
Abstract: No abstract text available
Text: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal
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MBR150,
MBR160
MBR160
MBR150/160
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GTO thyristor Application notes
Abstract: Thomson-CSF capacitors FPX86Y1254J GTO thyristor Thomson-CSF THYRISTOR 100 amp 1000 volt GTO Thomson-CSF passive components FPX86Y0505J Thomson-CSF ceramic capacitor FPX86Y0275J
Text: FPX RANGE Capacitor for Power Electronics Preliminary data sheet Preliminary data FPX Applications Protection of thyristors . Protection of gate turn off thyristor GTO . Clamping (Secondary snubber) . Technology Metallized polypropylene dielectric capacitor with controlled self healing .
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PHOTO TRANSISTOR 940nm to-18
Abstract: cnd0214a PNA1801LS-ND LN58-ND hall effect position sensor 503 PNZ109L-ND PNZ14700R LN175PA-ND PNZ331CL LNA2W01L-ND
Text: Hall Effect Sensor ICs Panasonic’s Hall IC is a combination of a Hall element, amplifier, Schmidt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the IC technology. It amplifies Hall element output at the amplifier,
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CND0204ACT-ND
CND0215ACT-ND
CND0208ACT-ND
CND0214ACT-ND
CND0209ACT-ND
CND0216ACT-ND
CND0204ATR-ND
CND0215ATR-ND
CND0208ATR-ND
CND0214ATR-ND
PHOTO TRANSISTOR 940nm to-18
cnd0214a
PNA1801LS-ND
LN58-ND
hall effect position sensor 503
PNZ109L-ND
PNZ14700R
LN175PA-ND
PNZ331CL
LNA2W01L-ND
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E 62320
Abstract: 100JB-L IRF 725 100JB 26MB-A 36MB-A 250JB-L
Text: Bulletin I2715 rev. E 08/97 MB & JB SERIES SINGLE PHASE BRIDGE Power Modules Features 10 A 25 A 35 A Universal, 3 way terminals: push-on, wrap around or solder High thermal conductivity package, electrically insulated case Center hole fixing Excellent power/volume ratio
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I2715
100JB-L
26MB-A
36MB-A
250JB-L
35MB-A
E 62320
IRF 725
100JB
36MB-A
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HT 1200-4
Abstract: YAMAICHI ic234 PT740 AB TSSOP YAMAICHI SOCKET FP-20-0.65-01 IC51-1444-1354-7 PT817 Enplas drawings IC51-2084-1052-11 IC 7418 IC51-0242-1341
Text: Hitachi Semiconductor Package Data Book ADE–410–001B 3rd Edition March/97 Semiconductor & Integrated Circuit Devision, Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher functional
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March/97
HT 1200-4
YAMAICHI ic234
PT740 AB
TSSOP YAMAICHI SOCKET FP-20-0.65-01
IC51-1444-1354-7
PT817
Enplas drawings
IC51-2084-1052-11
IC 7418
IC51-0242-1341
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P channel 600v 30a IGBT
Abstract: step recovery diode 10a ultra fast diode EPE99 30A ultra fast diode 600v 10A ultra fast recovery diode fast recovery diode 1000v 10A fast recovery diode 600v 5A 30A, 600v DIODE Switching Characteristics of Fast Recovery Diodes
Text: C-Class Ultra Fast Recovery Diodes for High Speed Switching Applications M.T. Rahimo, S. R. Jones Power Division, Semelab plc., Coventry Road, Lutterworth, Leicestershire, LE17 4JB, United Kingdom. Tel + 44 1455 552505, Fax + 44 1455 552612, E-mail [email protected]
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June-97,
May-98,
P channel 600v 30a IGBT
step recovery diode
10a ultra fast diode
EPE99
30A ultra fast diode
600v 10A ultra fast recovery diode
fast recovery diode 1000v 10A
fast recovery diode 600v 5A
30A, 600v DIODE
Switching Characteristics of Fast Recovery Diodes
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skm 50 gd 123 d
Abstract: SKM 25 GD 123dl
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 40 / 30 70 / 50 ± 20 220 – 40 . . .+150 (125) 2 500 Class F 40/125/56 V V A A V W °C
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SMCJ170A
Abstract: 97 diode axial SMBJ170A
Text: CONTENTS SURFACE MOUNT DEVICES Device DescriDtion LC01-6 LC03-6 LCDA05- LCDA24 1500 Watt Low Capacitance 360 Watt Low Capacitance Preliminary Data 300 Watt Low Capacitance Array 300 Watt Low Capacitance SL05 - SL24 SLVDA2.8 & SLVDA3.3 SLVE2.8 & SLVE3.3 SLVG2.8 & SLVG3.3
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LC01-6
LC03-6
LCDA05-
LCDA24
SDC15
SMDA05
SMDA36
SMDA05-6
SMDA05C
SMDA24C
SMCJ170A
97 diode axial
SMBJ170A
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avr 551
Abstract: diode BBC
Text: 1N6461 QPL !500 Watt Axial Leaded TVS TEL: 805-498-2111 PEAK PULSE POWER vs. PULSE TIME T h ai 1N6468 FAX: 805-498-3804 10x1000ns IMPULSE WAVEFORM STEADY STATE DERATING CHARACTERISTICS FOR FREE AIR MOUNTING IÆ 20 « m to 100 IX MO 1Í0 180 MECHANICAL OUTLINE
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1N6461
1N6468
10x1000ns
1N6461
1N6462
1N6463
1N6464
1N6465
1N6466
avr 551
diode BBC
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as2350
Abstract: FPX86Y0684J THYRISTOR GTO Gate Turn Off Thyristor GTO IEC 68 FPX66P0504J
Text: I S S ^ ^ Jä W ; .V.W.V.VV.Ä .•.V.’.V > v^v p :;| , * -v -\ • x s*ss . •■■V <X "S \'•v. ss^íi^ísl^íís:^. S «*. %c» S «■ %< '> Ä 5 ä v.v.v.v.^ ^ v . » s. ¡¡ÿÿîj.x.x.g:««* Tfei ,¡!v! > * w! ' ^ Mv ' t . X .
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metal6Y0405J--
FPX86Y0455J--
FPX86Y0505J--
FPX86Y0605J--
M8/10
as2350
FPX86Y0684J
THYRISTOR GTO
Gate Turn Off Thyristor GTO
IEC 68
FPX66P0504J
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c4v3 zener
Abstract: c4v3 zener diode
Text: Silicon zener diodes. 1.3 Watts. The plastic material carries U/L recognition 94V-0. BZX85/SZ25 Sene«. 1 3 Watte. Case : DO-4 J/SMA Outline: 2/7 Nominal Zener Voltage TYPE Axial Lead BZX85 C2V7 BZX85 C3V0 BZX85 C3V3 BZX85 C3V6 BZX85 C3V9 BZX85 C4V3 BZX85 C4V7
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BZX85/SZ25
BZX85
c4v3 zener
c4v3 zener diode
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1N6461
Abstract: 1N6462 1N6463 1N6464 1N6465 1N6466 1N6468 8Q5-498-38Q4
Text: 1N6461 QPL 500 Watt Axial Leaded TVS Thru 1N6468 TEL:805-498-2111 FAX:805-498-3804 DESCRIPTION FEATURES: T he 1N 64xx series of tra n sie n t volta ge sup pre ssors are de sig ned to pro te ct m ilitary and com m e rcial e le ctro n ic e q u ip m e n t from o ve rvolta ges caused by lightning, ESD,
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1N6461
1N6468
8Q5-498-38Q4
1N64xx
ppPr1997d
9132Q
10x1000
P1K97
1N6461
1N6462
1N6463
1N6464
1N6465
1N6466
1N6468
8Q5-498-38Q4
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62320 rectifier
Abstract: e62320
Text: I Bulletin 12715 rev. E 0 8 /97 International IQR Rectifier m b & jb series SINGLE PHASE BRIDGE Power Modules 10 A 25 A 35 A Features • Universal, 3 way terminals: push-on, wrap around or solder ■ High thermal conductivity package, electrically insulated case
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100JB
250JB
62320 rectifier
e62320
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n4007 diode
Abstract: DIODE n4007 Diode rectifier N4007 n4007 1N4001 SMT 1210 capacitors nacew 10megohms
Text: Table of Contents and Selection Chart ALUMINUM AND TANTALUM ELECTROLYTIC CAPACITORS LEADED TYPES AXIAL SUB-MINIATURE TYPES RADIAL LOW IMPEDANCE HIGH RELIABILITY TYPES RADIAL LOW LEAKAGE TYPES RADIAL SUPER-MINIATURE RADIAL STANDARD TYPES Type Series ApplicatiorVFeature
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105PC.
1N4001
N4007)
1N5817
1N5819)
175-C
n4007 diode
DIODE n4007
Diode rectifier N4007
n4007
1N4001 SMT 1210
capacitors nacew
10megohms
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S3A1
Abstract: 1N3492
Text: SEMICONDUCTOR PRODUCTS CATALOG SWEETWATER AVENUE • P. O. BOX 328 • BEDFORD • MASSACHUSETTS • AREA CODE 617 275-8542 T o v i i i h a n d C o m liC io n ^ o f B a le T e rm s o f P a y m e n t Domestic — net 30 days if credit has been arranged. Where credit is not established, payment must be re
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1N6621 JANTXV
Abstract: IN6620 1N6620 1N6621 1N6622 1N6623 1N6624 1N6625 IN662 DIODE MARKING EJL
Text: 1 N 6 6 2 0 th ru 1IU6625 MicrosemiCorp. f l'h a diode experts SANTA ANA, CA SCOTTSDALE, A Z For m ore inform ation cali: ULTRA FAST RECTIFIERS 602 941-6300 .030 ± .002 DIA. (.78) Features 1.0 MIN. (25.4) • • • • • • • AXIAL AND SURFACE MOUNT CONFIGURATIONS
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IN6620
1IU6625
MIL-S-19500/585
1N6620
1IM6620
1N662S
1N6620US
1N6625US
1N6621 JANTXV
1N6621
1N6622
1N6623
1N6624
1N6625
IN662
DIODE MARKING EJL
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