Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.2E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed
|
Original
|
PDF
|
MBM29QM96DF-65/80
MBM29QM96DF
96M-bit,
80-ball
F0212
|
ARINC 629 sim
Abstract: m38510/55501 AMP ARINC-629 SIM MT72038 smd cmos 4435 CQFP 240 arinc 629 controller P2X smd CERAMIC PIN GRID ARRAY CPGA lead frame arinc 629
Text: The Microelectronic Specialists Product SHORT FORM January 2001 AEROFLEX UTMC UT69151 SµMMIT DXE • UT69151 SµMMIT™ XTE ■ UT69151 SµMMIT™ RTE ■ 1760 ■ ■ ■ ■ ■ ■ ■ ■ 84,132 84 1.0E6* Q,V 5962-92118 ■ ■ ■ ■ ■ ■ ■
|
Original
|
PDF
|
UT69151
800-645-UTMC
800-THE-1553
800-THE-1553
ARINC 629 sim
m38510/55501
AMP ARINC-629 SIM
MT72038
smd cmos 4435
CQFP 240
arinc 629 controller
P2X smd
CERAMIC PIN GRID ARRAY CPGA lead frame
arinc 629
|
M6MGD967W33TP
Abstract: 52-pin TSOP abzb
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
PDF
|
|
LRS1816
Abstract: LRS1B03 LRS1B04 LRS1B06 LRS1B07 sharp page buffer
Text: NEW PRODUCT INFORMATION LRS1B03/04/06/07 4-chip Stacked CSP Combination Memory < Outline > A multitude of multimedia services, including the distribution of information, electronic settlements of accounts and even TV-phones, are predicted thanks to improved baud rates in next generation cellular phones.
|
Original
|
PDF
|
LRS1B03/04/06/07
200-Mbits
LRS1B07)
IC-E078
LRS1816
LRS1B03
LRS1B04
LRS1B06
LRS1B07
sharp page buffer
|
28F320W18
Abstract: Q939 Q943 28F640W18 q942 QC17 Q944 28F128W18 intel DOC Q938
Text: 1.8 Volt Intel Wireless Flash Memory 28F320W18, 28F640W18, 28F128W18 Specification Update July 2001 Notice: The 28F640W18 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are
|
Original
|
PDF
|
28F320W18,
28F640W18,
28F128W18
28F640W18
28F128W18
28F320W18
Q939
Q943
q942
QC17
Q944
intel DOC
Q938
|
M29DW256G
Abstract: M29dw256 spansion TSOP56
Text: M29DW256G 256-Mbit x16, multiple bank, page, dual boot 3 V supply flash memory Features BGA Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 9 V for fast program (optional) Asynchronous random/page read
|
Original
|
PDF
|
M29DW256G
256-Mbit
32Mbit
96Mbit
M29DW256G
M29dw256
spansion TSOP56
|
M6MGD967W33ATP
Abstract: No abstract text available
Text: Renesa LSIs Preliminary M6MGD967W33ATP Notice: This is not a final specification. Some parametric limits are subject to change. 100,663,296-BIT 6,291,456-WORD BY 16-BIT CMOS FLASH MEMORY 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS Mobile RAM & Stacked- µMCP (micro Multi Chip Package)
|
Original
|
PDF
|
M6MGD967W33ATP
296-BIT
456-WORD
16-BIT)
432-BIT
152-WORD
M6MGD967W33ATP
96M-bit
32M-bit
|
BA239
Abstract: No abstract text available
Text: Rev. 1.0, Jun. 2010 K8P5616UZB 256Mb B-die Page NOR FLASH 256M Bit 16M x16, 32M x8 , Page Mode datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
PDF
|
K8P5616UZB
256Mb
54TSOP
50TYP
64FBGA
60Solder
BA239
|
Untitled
Abstract: No abstract text available
Text: Target Information FLASH MEMORY K8P5615UQA 256Mb A-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
|
Original
|
PDF
|
K8P5615UQA
256Mb
500000h-51FFFFh
4E0000h-4FFFFFh
4C0000h-4DFFFFh
4A0000h-4BFFFFh
480000h-49FFFFh
460000h-47FFFFh
440000h-45FFFFh
420000h-43FFFFh
|
sck 103 capacitor
Abstract: TMS380C30 TI380C60A SINTEN SINTEN PC -1025 datasheet srd relay TI380C25 TI380C30A TI380FPA TMS380
Text: TI380C30A INTEGRATED TOKEN-RING COMMPROCESSOR AND PHYSICAL-LAYER INTERFACE SPWS034 – MARCH 1998 D D D D D D D D D D D D D D Single-Chip Token-Ring Solution IBM Token-Ring Network Compatible Compatible With ISO/IEC IEEE Std 802.5:1992 Token-Ring Access-Method
|
Original
|
PDF
|
TI380C30A
SPWS034
TI380FPA
sck 103 capacitor
TMS380C30
TI380C60A
SINTEN
SINTEN PC -1025 datasheet
srd relay
TI380C25
TI380C30A
TMS380
|
LRS1815
Abstract: sharp LRS1331 sharp LRS1360 LRS1397 LRS1B03 LRS1B04 LRS1B06 LRS1B07 LRS1826 16M SRAM
Text: NEW PRODUCT INFORMATION LRS1397 96-Mbit Flash Memory + 4-Mbit SRAM Combination Memory * Under development < Outline > LRS1397, consisting of a 96-Mbit flash memory and a 4-Mbit SRAM, is a composite memory chip that is being developed by applying stacked CSP technology to integrate the constituent memories into a large-capacity, packaged memory.
|
Original
|
PDF
|
LRS1397
96-Mbit
LRS1397,
96-Mbit
IC-E090
LRS1815
sharp LRS1331
sharp LRS1360
LRS1397
LRS1B03
LRS1B04
LRS1B06
LRS1B07
LRS1826
16M SRAM
|
TI380C30APGF
Abstract: sck 103 capacitor SINTEN TI380C60A relay srd SINTEN PC -1025 datasheet srd relay TI380C25 TI380C30A TI380FPA
Text: TI380C30A INTEGRATED TOKEN-RING COMMPROCESSOR AND PHYSICAL-LAYER INTERFACE SPWS034 – MARCH 1998 D D D D D D D D D D D D D D Single-Chip Token-Ring Solution IBM Token-Ring Network Compatible Compatible With ISO/IEC IEEE Std 802.5:1992 Token-Ring Access-Method
|
Original
|
PDF
|
TI380C30A
SPWS034
TI380FPA
TI380C30APGF
sck 103 capacitor
SINTEN
TI380C60A
relay srd
SINTEN PC -1025 datasheet
srd relay
TI380C25
TI380C30A
|
Untitled
Abstract: No abstract text available
Text: Standard Products ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module www.aeroflex.com/Avionics March 18, 2005 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 Low Power 1M x 16 Synchronous Dynamic Random Access Memory Chips in one MCM
|
Original
|
PDF
|
ACT-D1M96S
50-MHz
SCD3369-1
|
Untitled
Abstract: No abstract text available
Text: Standard Products ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module www.aeroflex.com/Avionics May 30, 2006 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 1M x 16 synchronous dynamic random access memory chips in one MCM
|
Original
|
PDF
|
ACT-D1M96S
50-MHz
SCD3369-1
|
|
|
SA204
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20900-1E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed in-system
|
Original
|
PDF
|
DS05-20900-1E
MBM29QM96DF-65/80
MBM29QM96DF
96M-bit,
80-ball
MBM29QM96DF
F0306
SA204
|
TI380C60A
Abstract: No abstract text available
Text: TI380C30A INTEGRATED TOKEN-RING COMMPROCESSOR AND PHYSICAL-LAYER INTERFACE SPWS034 – MARCH 1998 D D D D D D D D D D D D D D Single-Chip Token-Ring Solution IBM Token-Ring Network Compatible Compatible With ISO/IEC IEEE Std 802.5:1992 Token-Ring Access-Method
|
Original
|
PDF
|
TI380C30A
SPWS034
TI380FPA
TI380C60A
|
Untitled
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX67L12816J3/MX67L9632J3 32M-BIT [4Mb x 8 or 2Mb x 16] Flash Plus 96M-BIT [12Mb x 8 or 6Mb x 16] MTP CMOS, 16M-BIT [2Mb x 8 or 1Mb x 16] Flash Plus 128M-BIT [16Mb x 8 or 8Mb x 16] MTP CMOS Flash Plus MTP MonoChip FEATURES • 2.7V to 3.6V operation voltage Output power supply
|
Original
|
PDF
|
MX67L12816J3/MX67L9632J3
32M-BIT
96M-BIT
16M-BIT
128M-BIT
MX67L9632J3:
x8/x16)
MX67L12816J3:
|
sck 103 capacitor
Abstract: TI380C60A SINTEN PC -1025 datasheet srd relay TMS380 TI380C25 TI380C30A TI380FPA TMS380SRA
Text: TI380C30A INTEGRATED TOKEN-RING COMMPROCESSOR AND PHYSICAL-LAYER INTERFACE SPWS034 – MARCH 1998 D D D D D D D D D D D D D D Single-Chip Token-Ring Solution IBM Token-Ring Network Compatible Compatible With ISO/IEC IEEE Std 802.5:1992 Token-Ring Access-Method
|
Original
|
PDF
|
TI380C30A
SPWS034
TI380FPA
sck 103 capacitor
TI380C60A
SINTEN PC -1025 datasheet
srd relay
TMS380
TI380C25
TI380C30A
TMS380SRA
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY CYF2144V 144-Mbit Programmable Multi-Queue FIFOs 144-Mbit Programmable Multi-Queue FIFOs Features Functional Description • Memory organization ❐ Industry’s largest first in first out FIFO memory densities: 144-Mbit ❐ Selectable memory organization: x 9, × 12, × 16, × 18, × 20,
|
Original
|
PDF
|
CYF2144V
144-Mbit
|
SA158
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.1E PAGE MODE FLASH MEMORY CMOS 96M 6M x 16 BIT MBM29QM96DF-65/80 • GENERAL DESCRIPTION The MBM29QM96DF is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed
|
Original
|
PDF
|
MBM29QM96DF-65/80
MBM29QM96DF
96M-bit,
80-ball
SA158
|
TI380C60A
Abstract: No abstract text available
Text: TI380C30A INTEGRATED TOKEN-RING COMMPROCESSOR AND PHYSICAL-LAYER INTERFACE SPWS034 – MARCH 1998 D D D D D D D D D D D D D D Single-Chip Token-Ring Solution IBM Token-Ring Network Compatible Compatible With ISO/IEC IEEE Std 802.5:1992 Token-Ring Access-Method
|
Original
|
PDF
|
TI380C30A
SPWS034
TI380FPA
TI380C60A
|
Untitled
Abstract: No abstract text available
Text: ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM Multichip Module Features • ■ ■ ■ ■ ■ ■ ■ 6 Low Power Micron 1M x 16 Synchronous Dynamic Random Access Memory Chips in one MCM User Configureable as "2" Independent 512K x 48 x 2 Banks
|
Original
|
PDF
|
ACT-D1M96S
50-MHz
MIL-PRF-38534
MIL-STD-883
SCD3369-1
|
DQ85
Abstract: No abstract text available
Text: ACT-D1M96S High Speed 96 MegaBit 3.3V Synchronous DRAM I I I I I I Multichip Module - H eatures 6 Low Power Texas Instruments 1M X 16 Synchronous Dynamic Random Access Memory Chips in one MCM User Configureable as "2" Independent 512K X 48 X 2 Banks High-Speed, Low-Noise, Low-Voltage TTL LVTTL
|
OCR Scan
|
PDF
|
ACT-D1M96S
50-MHz
IL-PRF-38534
MIL-STD-883
SCD3369-1
DQ85
|
str W 6553
Abstract: No abstract text available
Text: TI380C30A INTEGRATED TOKEN-RING COMMPROCESSOR AND PHYSICAL-LAYER INTERFACE SPWSQ34 - MARCH 1998 Single-Chip Token-Ring Solution IBM Token-Ring Network™ Compatible Compatible With ISO/IEC IEEE Std 802.5:1992 Token-Ring Access-Method and Physical-Layer Specifications
|
OCR Scan
|
PDF
|
TI380C30A
SPWSQ34
TI380FPA
str W 6553
|