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    945 TRANSISTOR Search Results

    945 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    945 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF9030N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts


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    PDF MRF9030N MRF9030NBR1 MRF9030N

    Untitled

    Abstract: No abstract text available
    Text: LET9060C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT @ 28 V = 60 W with 18 dB gain @ 945 MHz ■ POUT (@ 36 V)= 90 W with 18 dB gain @ 945


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    PDF LET9060C 2002/95/EC LET9060C

    Untitled

    Abstract: No abstract text available
    Text: LET9060F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT @ 28 V = 60 W with 18 dB gain @ 945 MHz ■ POUT (@ 36 V)= 90 W with 18 dB gain @ 945


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    PDF LET9060F 2002/95/EC LET9060F

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD419203 TECHNICAL DATA DATA SHEET 945, REV. A Formerly part number SHD4193 PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N3741 • Surface Mount Package Absolute Maximum Ratings* Symbol


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    PDF SHD4193 SHD419203 2N3741

    945 TRANSISTOR

    Abstract: PD57045S
    Text: PD57045 - PD57045S RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


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    PDF PD57045 PD57045S PowerSO-10RF. 945 TRANSISTOR PD57045S

    945 TRANSISTOR

    Abstract: 700B AN1294 PD57018 PD57018S
    Text: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


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    PDF PD57018 PD57018S PowerSO-10RF PD57018 945 TRANSISTOR 700B AN1294 PD57018S

    945 TRANSISTOR

    Abstract: 700B M243 SD57030 TSD57030 issi 546
    Text: SD57030 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M243 Epoxy Sealed DESCRIPTION


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    PDF SD57030 SD57030 TSD57030 945 TRANSISTOR 700B M243 TSD57030 issi 546

    PD57060s

    Abstract: 945 TRANSISTOR PD57060
    Text: PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION


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    PDF PD57060S PD57060S PowerSO-10RF. 945 TRANSISTOR PD57060

    d5703

    Abstract: SMD surface mount transistor BR PD57030S d57030s 945 TRANSISTOR transistor d 945 AN1294 PD57030 transistor C 945 capacitor 0.1uf 500v
    Text: PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 14 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


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    PDF PD57030 PD57030S PD57030 PowerSO-10RF. d5703 SMD surface mount transistor BR PD57030S d57030s 945 TRANSISTOR transistor d 945 AN1294 transistor C 945 capacitor 0.1uf 500v

    telefunken IC 121

    Abstract: No abstract text available
    Text: S 822 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, low current, low voltage, high gain, 50 Ohm transistor for 945 MHz cordless telephone, pager, and low current UHF remote control applications. Features D Low noise figure


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    PDF D-74025 telefunken IC 121

    945 TRANSISTOR

    Abstract: PD57030S AN1294 PD57030 le5012
    Text: PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 14 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION


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    PDF PD57030 PD57030S PD57030 PowerSO-10RF. 945 TRANSISTOR PD57030S AN1294 le5012

    945 TRANSISTOR

    Abstract: AN1294 PD57006 PD57006S smd transistor z8 smd le transistor 945 p a4 smd transistor
    Text: PD57006 PD57006S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 6 W with 15 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION


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    PDF PD57006 PD57006S PD57006 PowerSO-10RF. 945 TRANSISTOR AN1294 PD57006S smd transistor z8 smd le transistor 945 p a4 smd transistor

    945 TRANSISTOR

    Abstract: 700B PD57018 PD57018S resistor 1 k ohm stmicroelectronics 402 transistor 650
    Text: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


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    PDF PD57018 PD57018S PowerSO-10RF PD57018 945 TRANSISTOR 700B PD57018S resistor 1 k ohm stmicroelectronics 402 transistor 650

    capacitor 0.1uf 500v

    Abstract: 945 TRANSISTOR PD57030S LDMOS 1W AN1294 PD57030 transistor 945 transistor C 945 transistor d 945
    Text: PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 14 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION


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    PDF PD57030 PD57030S PD57030 PowerSO-10RF. capacitor 0.1uf 500v 945 TRANSISTOR PD57030S LDMOS 1W AN1294 transistor 945 transistor C 945 transistor d 945

    PD57060s

    Abstract: 700B AN1294 PD57060 925MHz
    Text: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead


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    PDF PD57060 PD57060S PowerSO-10RF PD57060S PowerSO-10RF. PD57060 700B AN1294 925MHz

    NPN transistor mhz s-parameter

    Abstract: transistor c 2316
    Text: S 852 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, low current, low voltage, high gain, 50 Ohm transistor for 945 MHz cordless telephone, pager, and low current UHF remote control applications. Features D Low supply voltage


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    PDF D-74025 NPN transistor mhz s-parameter transistor c 2316

    PD85025C

    Abstract: No abstract text available
    Text: PD85025C RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 16 dB gain @ 945 MHz / 13.6 V ■


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    PDF PD85025C 2002/95/EC PD85025C

    Untitled

    Abstract: No abstract text available
    Text: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead


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    PDF PD57060 PD57060S PD57060S PowerSO-10RF.

    Untitled

    Abstract: No abstract text available
    Text: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead


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    PDF PD57060 PD57060S PD57060S PowerSO-10RF.

    Untitled

    Abstract: No abstract text available
    Text: PD57070 PD57070S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W with 14.7 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


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    PDF PD57070 PD57070S PowerSO-10RF PowerSO-10RF.

    lc 945 p transistor

    Abstract: 852 d TRANSISTOR lc 945 p transistor NPN 2sc945 2SC945 Y 2SA733 2sc 945 p transistor MICRO ELECTRONICS transistor amplifier 5v to 6v 2SA733 Y
    Text: 2SC 945 NFN SILICON PIANAR EPITAXIAL TRANSISTOR 1I o h ! i| '£ ? r - r - . , - í ^ .- - .i '•-ÿ ! « f c * CASE TO-92B 2SC 945 IS AN NFN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTARY TO THE PNP TYPE 2SA733.


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    PDF 2SC945 O-92B 2SC945 2SA733. 100mA 200mA 250mW lc 945 p transistor 852 d TRANSISTOR lc 945 p transistor NPN 2SC945 Y 2SA733 2sc 945 p transistor MICRO ELECTRONICS transistor amplifier 5v to 6v 2SA733 Y

    2sc 945 p transistor

    Abstract: transistor 2sc 945 945 npn transistor c 945 945 TRANSISTOR transistor amplifier 5v to 6v lc 945 transistor transistor 945 oms 450 TRANSISTOR 2SC
    Text: 2SC 945 NPN SILICON PIANAR EPITAXIAL TRANSISTOR CASE 1’0-92B 2SC 945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTA'RÏ TO THE PNP TYPE 2SA733. ABSOLUTE MAXIMUM RATINGS C o lle c to r-B a s e V o ltag e


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    PDF 2SA733. T0-92B 100mA 200mA 250mW 3-B93303 J0321 2sc 945 p transistor transistor 2sc 945 945 npn transistor c 945 945 TRANSISTOR transistor amplifier 5v to 6v lc 945 transistor transistor 945 oms 450 TRANSISTOR 2SC

    transistor BC 945

    Abstract: BC 945 transistor lc 945 p transistor BC 945 p lc 945 transistor transistor 2 FC 945 2sc 945 p transistor transistor 2sc 945 transistor LC 945 T0-92B
    Text: 2SC 945 NPN SILICON PIANAR EPITAXIAL TRANSISTOR CASE T0-92B 2SC 945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTA'RY TO THE PNP TYPE 2SA733. ABSOLUTE MAXIMUM RATINGS C ollector-B ase V oltage C o llecto r-E m itter V oltage


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    PDF 2sa733. t0-92b 100mA 200mA 250mW transistor BC 945 BC 945 transistor lc 945 p transistor BC 945 p lc 945 transistor transistor 2 FC 945 2sc 945 p transistor transistor 2sc 945 transistor LC 945

    Untitled

    Abstract: No abstract text available
    Text: _ J \ _ BD944 BD946 BD948 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.


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    PDF BD944 BD946 BD948 BD943; CBD944 0Q34552