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    94-1 TRANSISTOR Search Results

    94-1 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    94-1 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: OP A6 94 OP A6 94 OPA694 www.ti.com SBOS319G – SEPTEMBER 2004 – REVISED JANUARY 2010 Wideband, Low-Power, Current Feedback Operational Amplifier Check for Samples: OPA694 FEATURES 1 • • • • • • 2 • UNITY GAIN STABLE BANDWIDTH: 1.5GHz HIGH GAIN OF 2V/V BANDWIDTH: 690MHz


    Original     		PDF OPA694 SBOS319G 690MHz 700V/msec 675MHz OT23-5 OPA694 500MHz

    sot-23 Marking 75w

    Abstract: OPA2683 OPA2684 OPA2694 OPA658 OPA683 OPA684 OPA691 OPA694 OPA695
    Text: OP A6 94 OP A6 94 OPA694 www.ti.com SBOS319G – SEPTEMBER 2004 – REVISED JANUARY 2010 Wideband, Low-Power, Current Feedback Operational Amplifier Check for Samples: OPA694 FEATURES 1 • • • • • • 2 • UNITY GAIN STABLE BANDWIDTH: 1.5GHz HIGH GAIN OF 2V/V BANDWIDTH: 690MHz


    Original     		PDF OPA694 SBOS319G 690MHz 700V/msec 675MHz OT23-5 OPA658 OPA694 sot-23 Marking 75w OPA2683 OPA2684 OPA2694 OPA658 OPA683 OPA684 OPA691 OPA695

    Untitled

    Abstract: No abstract text available
    Text: OP A6 94 OP A6 94 OPA694 www.ti.com SBOS319G – SEPTEMBER 2004 – REVISED JANUARY 2010 Wideband, Low-Power, Current Feedback Operational Amplifier Check for Samples: OPA694 FEATURES 1 • • • • • • 2 • UNITY GAIN STABLE BANDWIDTH: 1.5GHz HIGH GAIN OF 2V/V BANDWIDTH: 690MHz


    Original     		PDF OPA694 SBOS319G 690MHz 700V/msec 675MHz OT23-5 OPA658 OPA694

    Untitled

    Abstract: No abstract text available
    Text: OP A6 94 OP A6 94 OPA694 www.ti.com SBOS319G – SEPTEMBER 2004 – REVISED JANUARY 2010 Wideband, Low-Power, Current Feedback Operational Amplifier Check for Samples: OPA694 FEATURES 1 • • • • • • 2 • UNITY GAIN STABLE BANDWIDTH: 1.5GHz HIGH GAIN OF 2V/V BANDWIDTH: 690MHz


    Original     		PDF OPA694 SBOS319G 690MHz 700V/msec 675MHz OT23-5 OPA658 OPA694

    Untitled

    Abstract: No abstract text available
    Text: OP A6 94 OP A6 94 OPA694 www.ti.com SBOS319G – SEPTEMBER 2004 – REVISED JANUARY 2010 Wideband, Low-Power, Current Feedback Operational Amplifier Check for Samples: OPA694 FEATURES 1 • • • • • • 2 • UNITY GAIN STABLE BANDWIDTH: 1.5GHz HIGH GAIN OF 2V/V BANDWIDTH: 690MHz


    Original     		PDF OPA694 SBOS319G 690MHz 700V/msec 675MHz OT23-5 OPA694 500MHz

    OPA2683

    Abstract: OPA2684 OPA2694 OPA658 OPA683 OPA684 OPA691 OPA694 OPA695 sot-23 Marking 75w
    Text: OP A6 94 OP A6 94 OPA694 www.ti.com SBOS319G – SEPTEMBER 2004 – REVISED JANUARY 2010 Wideband, Low-Power, Current Feedback Operational Amplifier Check for Samples: OPA694 FEATURES 1 • • • • • • 2 • UNITY GAIN STABLE BANDWIDTH: 1.5GHz HIGH GAIN OF 2V/V BANDWIDTH: 690MHz


    Original     		PDF OPA694 SBOS319G 690MHz 700V/msec 675MHz OT23-5 OPA658 OPA694 OPA2683 OPA2684 OPA2694 OPA658 OPA683 OPA684 OPA691 OPA695 sot-23 Marking 75w

    ZUMT491

    Abstract: No abstract text available
    Text: ZUMT491 SOT323 PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 1 – OCTOBER 94 FEATURES * Extremely low saturation voltage * 500mW power dissipation * 1 Amp continuous collector current IC APPLICATIONS * Ideally suited for space / weight critical applications


    Original     		PDF ZUMT491 OT323 500mW OT323 500mA, 100mA* ZUMT491

    2N6714

    Abstract: 2N6715 DSA0037489 DSA003748
    Text: 2N6714 2N6715 — NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 1 ISSUE 1- MARCH 94 I FEATURES vcE~ * 40 volt * Gain of 50 at Ic= 1 Amp * PTOt=1 Watt ABSOLUTE MAXIMUM PARAMETER SYMBOL — Collector-Base Voltage Collector-Emitter Emitter-Base ~ RATINGS. ‘CBO


    Original     		PDF 2N6714 2N6715 le50mA, 2N6714 2N6715 DSA0037489 DSA003748

    BFS17

    Abstract: BFS17R BFS17W BFS17 E1
    Text: BFS17/BFS17R/BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280


    Original     		PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W D-74025 20-Jan-99 BFS17 E1

    "marking E1"

    Abstract: BFS17 BFS17R BFS17W
    Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2


    Original     		PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W D-74025 20-Jan-99 "marking E1"

    ZTX550

    Abstract: ZTX551 ztx550 equivalent DSA003768
    Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX550 ZTX551 ISSUE 1 – MARCH 94 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS 100 hFE - Normalised Gain % VCE(sat) - (Volts) -0.8 -0.6 ZTX550 ZTX551 -0.4 IC/IB=10 -0.2


    Original     		PDF ZTX550 ZTX551 ZTX550 ZTX551 ztx550 equivalent DSA003768

    Untitled

    Abstract: No abstract text available
    Text: DISCONTINUED PLEASE USE ZXT553 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT553 ISSUE 1 – FEB 94 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C REFER TO ZTX553 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER


    Original     		PDF ZXT553 FXT553 ZTX553 -100V, -150mA, -15mA*

    s869t

    Abstract: S869TR CASESOT-23 marking A1 TRANSISTOR Telefunken
    Text: S869T/S869TR Silicon PNP Planar RF Transistor Applications Self-oscillating ultrahigh frequency mixer stages Features D High blocking voltages D Transition frequency: fT = 1 GHz 1 2 1 3 3 94 9280 S869T Marking: 869 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter


    Original     		PDF S869T/S869TR S869T S869TR D-74025 24-Apr-96 CASESOT-23 marking A1 TRANSISTOR Telefunken

    Untitled

    Abstract: No abstract text available
    Text: DISCONTINUED PLEASE USE ZTX603 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT603 ISSUE 1 – MARCH 94 FEATURES * 80 Volt VCEO * Gain of 2K at IC=1 Amp * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 packages


    Original     		PDF ZTX603 FXT603 ZTX603 500mA, 100mA, 20MHz

    Untitled

    Abstract: No abstract text available
    Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2


    Original     		PDF BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W D-74025 20-Jan-99

    FXT755

    Abstract: ZTX755 DSA003758
    Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT755 ISSUE 1 – FEB 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX755 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL


    Original     		PDF FXT755 ZTX755 -125V, -500mA, -50mA* -200mA* -10mA, FXT755 DSA003758

    ZTX550

    Abstract: ZTX551 IC101
    Text: ZTX550 ZTX551 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS I ISSUE 1- MARCH 94 I FEATURES * * 60 Volt VCEO * Pt,l= 1 Watt 1 Amp continuous current ABSOLUTE MAXIMUM w RATINGS. SYMBOL PARAMETER Collector-Base Voltage ‘CEO ‘EBO —.— Peak Pulse Current


    Original     		PDF ZTX550 ZTX551 TamV27C 300Vs. le-150mA, lH-50mA, 100MHz ZTX550 ZTX551 IC101

    FXT655

    Abstract: ZTX655
    Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FXT655 ISSUE 1 – FEB 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX655 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL


    Original     		PDF FXT655 ZTX655 500mA, 200mA* 20MHz FXT655

    A1019

    Abstract: A1019 TRANSISTOR DIODE BUZ 94 BUZ94 TC-130-W
    Text: SIEM ENS SIPMOS Power Transistor BUZ 94 • N channel • Enhancement mode Type v DS h BUZ 94 600 V 7.8 A ^DS on 0.9 Si Package 1> Ordering Code TO-204 AA C67078-A1019-A2 Maximum Ratings Parameter Continuous drain current, Pulsed drain current, Symbol Tc = 27 "C


    OCR Scan     		PDF O-204 C67078-A1019-A2 fl235b05 623StiOS 0235bG5 A1019 A1019 TRANSISTOR DIODE BUZ 94 BUZ94 TC-130-W

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT705 ISSUE 1 - FEB 94. . . FEATURES * 120 V o lt V CE0 * Gain of 3K at lc=1 Amp * Ptot= 1 W a tt APPLICATIONS


    OCR Scan     		PDF FXT705 T0126 T0220 ZTX705 001G35S

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor BUZ 94 • N channel • Enhancement mode Type V Ds BUZ 94 600 V /d 7.8 A ^DS on Package 1> Ordering Code 0.9 Q TO-204 AA C67078-A1019-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 27 'C h 7.8 Pulsed drain current, Tc = 25 ”C


    OCR Scan     		PDF O-204 C67078-A1019-A2 35bOS fi535tDS A235bQ5

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT601B ISSUE 1 - MARCH 94- - FEATURES * 160 Volt VCE0 * Gain of 5K at lc=1 Amp * Ptot= 1 W att APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of T 0 126 and T0220 packages


    OCR Scan     		PDF FXT601B T0220 ZTX601B cH7Q57Ã 001G35S

    transistor C 3229

    Abstract: transistor 3229
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX658 ISSUE 1 - APRIL 94 FEATURES * 400 Volt VCE0 * 0.5 Amp continuous current * Ptot=1 Watt APPLICATIONS * Telephone dialler circuits E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL


    OCR Scan     		PDF ZTX658 20MHz 100mA, -20mA transistor C 3229 transistor 3229

    Untitled

    Abstract: No abstract text available
    Text: ZTX754 ZTX755 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS - - - ISSUE 2 - JULY 94 FEATURES * 150 V olt VCE0 * 1 A m p continuous current * Low saturation voltage * Ptot= 1 W att / E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER


    OCR Scan     		PDF ZTX754 ZTX755 2TX754 0Q1Q354 001G35S