JDSU laser diode
Abstract: 935 power diode
Text: COMMERCIAL LASERS High-Power 2.5 W 935 nm Fiber-Coupled Diode Laser 6395-L3 Series Key Features • Up to 2 W output power at 0.12 NA • 935 ± 35 nm • 50 µm Step Index fiber • Highly reliable • Highly efficiency Applications • Flexco graphic arts
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6395-L3
6395L3
498-JDSU
5378-JDSU
JDSU laser diode
935 power diode
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Untitled
Abstract: No abstract text available
Text: tSENSITRON 120NQ035 120NQ040 120NQ045 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 935, REV. - PLASTIC POWER SCHOTTKY RECTIFIER 35/40/45 V, 120 A Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features:
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120NQ035
120NQ040
120NQ045
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GHB-1206L-YG
Abstract: No abstract text available
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1206L-YG Features Description !3.2mmx1.6mm SMT LED,1.8mm THICKNESS. The Green source color devices are made with InGaAlP !LOW POWER CONSUMPTION. on GaAs substrate Light Emitting Diode.
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GHB-1206L-YG
2000PCS
DEC/03/2002
GHB-1206L-YG
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GHB-3M35-G
Abstract: No abstract text available
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M35-G Features Description !LOW POWER CONSUMPTION. The Green source color devices are made with !GENERAL PURPOSE LEADS. InGaN on SiC Light Emitting Diode. !RELIABLE AND RUGGED.
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GHB-3M35-G
MAR/05/2003
GHB-3M35-G
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GHB-1104R-B
Abstract: No abstract text available
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1104R-B Features Description !3.0mmx1.0mm SMT LED, 2.0mm THICKNESS. The Blue source color devices are made with !LOW POWER CONSUMPTION. Gan on Sapphire Light Emitting Diode.
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GHB-1104R-B
2000PCS
DEC/29/2002
GHB-1104R-B
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GHB-3M60D-O
Abstract: No abstract text available
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M60D-O Features Description !HIGH INTENSITY. The Super Bright Orange source color devices are made !LOW POWER CONSUMPTION. with DH InGaAlP on GaAs substrate Light Emitting Diode.
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GHB-3M60D-O
MAR/05/2003
GHB-3M60D-O
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GHB-0802R-B
Abstract: No abstract text available
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-0802R-B Features Description !2.1mmx0.6mm SMT LED, 1.0mm THICKNESS. The Blue source color devices are made with InGaN !LOW POWER CONSUMPTION. on SiC Light Emitting Diode.
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GHB-0802R-B
2000PCS
DEC/17/2002
GHB-0802R-B
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GHB-0805-B
Abstract: yp36
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-0805-B Features Description !2.0mmx1.25mm SMT LED, 1.1mm THICKNESS. The Blue source color devices are made with GaN !LOW POWER CONSUMPTION. on Sapphire Light Emitting Diode.
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GHB-0805-B
2000PCS
DEC/17/2002
GHB-0805-B
yp36
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GHB-3M35-O
Abstract: GHB-3M60D-O
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M35-O Description Features The Super Bright Orange source color devices are made !LOW with DH InGaAlP on GaAs substrate Light Emitting Diode. POWER CONSUMPTION. !POPULAR
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GHB-3M35-O
MAR/05/2003
GHB-3M35-O
GHB-3M60D-O
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GHB-3M40D-O
Abstract: No abstract text available
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M40D-O Description Features The Super Bright Orange source color devices are made !LOW with DH InGaAlP on GaAs substrate Light Emitting Diode. POWER CONSUMPTION. !SUITABLE
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GHB-3M40D-O
MAR/05/2003
GHB-3M40D-O
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GHB-3M30D-B
Abstract: No abstract text available
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M20D-B Features Description !LOW POWER CONSUMPTION. The Blue source color devices are made with InGaN on !POPULAR T-1 DIAMETER PACKAGE. SiC Light Emitting Diode. !GENERAL PURPOSE LEADS.
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GHB-3M20D-B
MAR/05/2003
GHB-3M30D-B
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GHB-1206L-B
Abstract: No abstract text available
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1206L-B Features !3.2mmx1.6mm !LOW POWER !WIDE !IDEAL Description SMT LED, 1.8mm THICKNESS. The Blue source color devices are made CONSUMPTION. with GaN on SiC Light Emitting Diode.
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GHB-1206L-B
2000PCS
DEC/05/2002
GHB-1206L-B
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smd diode B3
Abstract: GHB-1206L-B3
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1206L-B3 Features !3.2mmx1.6mm !LOW POWER !WIDE !IDEAL Description SMT LED, 1.8mm THICKNESS. The Blue source color devices are made CONSUMPTION. with GaN on Sapphire Light Emitting Diode.
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GHB-1206L-B3
2000PCS
DEC/05/2002
smd diode B3
GHB-1206L-B3
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GHB-3M50-RO
Abstract: yp2000
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M50-RO Features Description !LOW The Hyper Orange source color devices are made with POWER CONSUMPTION. !POPULAR T-1 DIAMETER PACKAGE. DH InGaAlP on GaAs substrate Light Emitting Diode.
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GHB-3M50-RO
MAR/05/2003
GHB-3M50-RO
yp2000
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GHB-3M50-G
Abstract: No abstract text available
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M50-G Features Description !LOW POWER CONSUMPTION. The Green source color devices are made with !GENERAL PURPOSE LEADS. InGaN on SiC Light Emitting Diode. !RELIABLE AND RUGGED.
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GHB-3M50-G
MAR/05/2003
GHB-3M50-G
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GHB-3M20-B
Abstract: No abstract text available
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M20-B Features Description !LOW POWER CONSUMPTION. The Blue source color devices are made with InGaN on !POPULAR T-1 DIAMETER PACKAGE. SiC Light Emitting Diode. !GENERAL PURPOSE LEADS.
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GHB-3M20-B
MAR/05/2003
GHB-3M20-B
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GHB-3M20-B2
Abstract: 3m20
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M20-B2 Features Description !LOW POWER CONSUMPTION. The Blue source color devices are made with InGaN on !POPULAR T-1 DIAMETER PACKAGE. SiC Light Emitting Diode. !GENERAL PURPOSE LEADS.
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GHB-3M20-B2
MAR/05/2003
GHB-3M20-B2
3m20
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GHB-1206L-B2
Abstract: No abstract text available
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1206L-B2 Features !3.2mmx1.6mm !LOW POWER !WIDE !IDEAL Description SMT LED, 1.8mm THICKNESS. The Blue source color devices are made CONSUMPTION. with InGaN on SiC Light Emitting Diode.
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GHB-1206L-B2
2000PCS
DEC/05/2002
GHB-1206L-B2
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GHB-1104R-YG
Abstract: No abstract text available
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-1104R-YG Features Description !3.0mmx1.0mm SMT LED, 2.0mm THICKNESS. The Mega Green source color devices are made with !LOW POWER CONSUMPTION. DH InGaAlP on GaAs substrate Light Emitting Diode.
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GHB-1104R-YG
2000PCS
DEC/29/2002
GHB-1104R-YG
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GHB-3M50-YG
Abstract: No abstract text available
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M50-YG Features !LOW Description POWER CONSUMPTION. !GENERAL PURPOSE LEADS. !RELIABLE AND RUGGED. !LONG The Green source color devices are made with InGaAlP on GaAs substrate Light Emitting Diode.
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GHB-3M50-YG
MAR/05/2003
GHB-3M50-YG
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GHB-3M35-R
Abstract: No abstract text available
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M35-R Features Description !LOW The Hyper Red source color devices are made with POWER CONSUMPTION. !SOLID STATE BLUE LIGHT SOURCE DH InGaAlP on GaAs substrate Light Emitting Diode.
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GHB-3M35-R
MAR/05/2003
GHB-3M35-R
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GHB-3M50-R
Abstract: No abstract text available
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M50-R Features Description !LOW POWER CONSUMPTION. The Hyper Bright Red source color devices are. !POPULAR T-1 DIAMETER PACKAGE. made with DH InGaAIP on GaAs substrate Light Emitting Diode
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GHB-3M50-R
MAR/05/2per
MAR/05/2003
GHB-3M50-R
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GHB-3M35-CW
Abstract: No abstract text available
Text: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-3M35-CW Features Description !LOW POWER CONSUMPTION. The source color devices are made with GaN on SiC !SUITABLE FOR Light Emitting Diode. FULL COLOR LED DISPLAYS AND INDICATORS DIAGNOSTIC/ANALYTICAL EQUIPMENT.
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GHB-3M35-CW
JAN/30/2003
GHB-3M35-CW
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W0458
Abstract: 935AB IN937 935A
Text: f Z 7 SGS-THOMSON ^7# 1N 935,A,B 1N939,A TEMPERATURE COMPENSATED ZENER DIODES • SEMICONDUCTOR MATERIAL : SILICON . TECHNOLOGY : LOCAL EPITAXY + GUARD RING DO 35 Glass ABSOLUTE RATINGS (limiting values) P aram e ter Symbol Ptot Power Dissipation* T stg
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1N939
W0458
935AB
IN937
935A
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