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    9275 TRANSISTOR Search Results

    9275 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    9275 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJE340

    Abstract: MJE340 datasheet MJE340 b c e
    Text: MJE340 Medium Power NPN Transistors Features: • NPN Plastic Medium Power Silicon Transistor. • Useful for High Voltage General Purpose Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical


    Original     		PDF MJE340 O-126 MJE340 MJE340 datasheet MJE340 b c e

    MJE350 b c e

    Abstract: Power Transistors TO-126 Case MJE350
    Text: MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability. TO-126 Plastic Package


    Original     		PDF MJE350 O-126 MJE350 b c e Power Transistors TO-126 Case MJE350

    2N3704

    Abstract: equivalent transistor 2n3704 2N3704 datasheet farnell
    Text: 2N3704 Bipolar Transistors Description: NPN Silicon Planar Epitaxial Transistors. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.40 1.14 H 1.53 K 12.70 - L 1.982 2.082 Dimensions : Millimetres


    Original     		PDF 2N3704 2N3704 equivalent transistor 2n3704 2N3704 datasheet farnell

    2N3705

    Abstract: "Bipolar Transistors" farnell
    Text: 2N3705 Bipolar Transistors Description: NPN Silicon Planar Epitaxial Transistors. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F G H 5° 1.14 1.40 1.53 K 12.70 - L 1.982 2.082 Dimensions : Millimetres


    Original     		PDF 2N3705 2N3705 "Bipolar Transistors" farnell

    farnell

    Abstract: Darlington transistor to 92 Darlington transistor MPSA14
    Text: MPSA14 NPN Darlington Transistor TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.40 1.14 H K 1.53 12.70 - Dimensions : Millimetres Pin Configuration: 1. Collector 2. Base 3. Emitter Page 1


    Original     		PDF MPSA14 farnell Darlington transistor to 92 Darlington transistor MPSA14

    7333 A

    Abstract: Power Transistors TO-126 Case farnell ic 901 BD437
    Text: BD437 Medium Power Transistors General Purpose TO-126 Features: • NPN Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C


    Original     		PDF BD437 O-126 O-126 7333 A Power Transistors TO-126 Case farnell ic 901 BD437

    BD681

    Abstract: NPN POWER DARLINGTON power darlington NPN POWER DARLINGTON TRANSISTORS
    Text: BD681 NPN Power Darlington Transistors Feature: • NPN Plastic Power Darlington Transistors. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical 0.49 0.75 G 4.5 (Typical) L 15.7 (Typical) M 1.27 (Typical)


    Original     		PDF BD681 O-126 BD681 NPN POWER DARLINGTON power darlington NPN POWER DARLINGTON TRANSISTORS

    transistor 2N5415

    Abstract: 2N5415 ic tc 4066 diagram
    Text: 1611580 Feature: • PNP transistors. Description: The 2N5415 are high voltage silicon epitaxial planar PNP transistors in JEDEC TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and


    Original     		PDF 2N5415 2N5415 transistor 2N5415 ic tc 4066 diagram

    TIP112

    Abstract: No abstract text available
    Text: TIP112 Darlington Transistors Features: • NPN Plastic Power Transistors. • General Purpose Darlington Amplifier and Low Speed Switching Applications. TO-220 Plastic Package Dimensions Minimum Maximum A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D - 0.90 E 1.15


    Original     		PDF TIP112 O-220 TIP112

    9016 transistor

    Abstract: MJE15032
    Text: MJE15032 Power Transistor Features: • High power complimentary pairs. • For high quality audio output stages, and general purpose push-pull amplifier configurations. • Silicon epitaxial fabrication power transistors. • High - frequency drivers in audio amplifier.


    Original     		PDF MJE15032 O-220 MJE150racy 9016 transistor MJE15032

    Power Transistors TO-126 Case

    Abstract: BD438 7333 A 9016 g farnell
    Text: BD438 Medium Power Transistors General Purpose TO-126 Features: • PNP Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C


    Original     		PDF BD438 O-126 O-126 Power Transistors TO-126 Case BD438 7333 A 9016 g farnell

    Power Transistors TO-126 Case

    Abstract: farnell ic 9400 BD680
    Text: BD680 PNP Power Darlington Transistors TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical 0.49 0.75 G 4.5 (Typical) L 15.7 (Typical) M 1.27 (Typical) N 3.75 (Typical) P S 3.0 3.2 2.5 (Typical) Dimensions : Millimetres


    Original     		PDF BD680 O-126 Power Transistors TO-126 Case farnell ic 9400 BD680

    Untitled

    Abstract: No abstract text available
    Text: TBD237, 238 Medium Power Transistors Features: • Epitaxial Silicon Power Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical


    Original     		PDF TBD237, O-126 TBD237 TBD238

    bd237 equivalent

    Abstract: BD237
    Text: BD237 Medium Power Transistors Features: • Epitaxial Silicon Power Transistors. • Intended for Use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical


    Original     		PDF BD237 O-126 bd237 equivalent BD237

    BC327-25

    Abstract: BC32725 pin configuration Bc327 pin configuration PNP transistor BC327 BC327 PNP transistor download datasheet BC327
    Text: BC327.25 Bipolar Transistors General Description: Silicon Planar Epitaxial Transistors. General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier. Dimensions Minimum Maximum A 4.42 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55


    Original     		PDF BC327 BC327-25 BC32725 pin configuration Bc327 pin configuration PNP transistor BC327 BC327 PNP transistor download datasheet

    BD238

    Abstract: No abstract text available
    Text: BD238 Medium Power Transistors Features: • Epitaxial Silicon Power Transistors. • Intended for Use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical


    Original     		PDF BD238 O-126 BD238

    TO-92 CASE MPSA06

    Abstract: F 9016 transistor 7333 A MPSa06 equivalent transistor MPSA06 transistor 7333 MPSA06 transistor MPSA06
    Text: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70


    Original     		PDF MPSA06 TO-92 CASE MPSA06 F 9016 transistor 7333 A MPSa06 equivalent transistor MPSA06 transistor 7333 MPSA06 transistor MPSA06

    transistor 9016 npn

    Abstract: farnell IC 358 BD179
    Text: BD179 Medium Power Transistors Features: • Epitaxial Silicon Power Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical


    Original     		PDF BD179 O-126 transistor 9016 npn farnell IC 358 BD179

    C 5022

    Abstract: farnell BD179 BD180
    Text: BD180 Medium Power Transistors Features: • Epitaxial Silicon Power Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical


    Original     		PDF BD180 O-126 C 5022 farnell BD179 BD180

    BC635

    Abstract: TBC635
    Text: BC635 Medium Power Bipolar Transistors Features: • High performance, low frequency devices typically with current ratings 1A up to 1W power dissipation. • NPN silicon planar epitaxial transistors. • Driver stages of audio amplifier application. TO-92 Plastic Package


    Original     		PDF BC635 BC635 TBC635

    TBD679

    Abstract: NPN POWER DARLINGTON TRANSISTORS TBD681
    Text: TBD675, 677, 679, 681 NPN Power Darlington Transistors Feature: • NPN Plastic Power Darlington Transistors. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical 0.49 0.75 G 4.5 (Typical) L 15.7 (Typical)


    Original     		PDF TBD675, O-126 TBD675 TBD679 NPN POWER DARLINGTON TRANSISTORS TBD681

    transistor bc337 npn

    Abstract: BC337 TO-92 NPN general purpose transistor BC337 farnell BC337 equivalent equivalent for BC337 transistor bc337 datasheet BC337 pin configuration Bc337
    Text: BC337 Bipolar Transistors General Description: Silicon Planar Epitaxial Transistors. General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier. Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55


    Original     		PDF BC337 transistor bc337 npn BC337 TO-92 NPN general purpose transistor BC337 farnell BC337 equivalent equivalent for BC337 transistor bc337 datasheet BC337 pin configuration Bc337

    pin configuration NPN transistor BD679

    Abstract: bd679 "Darlington Transistors" NPN POWER DARLINGTON 7333 A ic 9400 Power Transistors TO-126 Case d 44 npn bd679 NPN NPN POWER DARLINGTON TRANSISTORS
    Text: BD679 NPN Power Darlington Transistors Feature: • NPN Plastic Power Darlington Transistors. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical 0.49 0.75 G 4.5 (Typical) L 15.7 (Typical) M 1.27 (Typical)


    Original     		PDF BD679 O-126 pin configuration NPN transistor BD679 bd679 "Darlington Transistors" NPN POWER DARLINGTON 7333 A ic 9400 Power Transistors TO-126 Case d 44 npn bd679 NPN NPN POWER DARLINGTON TRANSISTORS

    transistor t2a

    Abstract: U 318 m t2a transistor UF2820P
    Text: M an A M P com pany RF MOSFET Power Transistor, 20W, 28V 100 -500 MHz UF2820P V2.00 Features • • • • • N-Channel Enhancem ent Mode Device DMOS Structure I.ower Capacitances for Broadband O peration Com m on Source C onfiguration Lower Noise Floor


    OCR Scan     		PDF UF2820P transistor t2a U 318 m t2a transistor UF2820P