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    IRF3710

    Abstract: IRF3710 equivalent mosfet irf3710
    Text: PD - 91309B IRF3710 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 23mΩ G ID = 57A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize


    Original     		91309B IRF3710 O-220 IRF3710 IRF3710 equivalent mosfet irf3710 PDF

    IRF3710

    Abstract: IRF3710 equivalent mosfet irf3710
    Text: PD - 91309B IRF3710 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 23mΩ G ID = 57A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize


    Original     		91309B IRF3710 O-220 O-220AB IRF3710 IRF3710 equivalent mosfet irf3710 PDF