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    IRLML6302

    Abstract: No abstract text available
    Text: PD - 91259F IRLML6302 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.60Ω S Description Fifth Generation HEXFETs from International Rectifier


    Original     		91259F IRLML6302 OT-23 EIA-481 EIA-541. IRLML6302 PDF