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    IRHN9130

    Abstract: IRHN93130
    Text: PD - 90886C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 IRHN9130 100V, P-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN9130 100K Rads (Si) IRHN93130 300K Rads (Si) RDS(on) 0.3Ω 0.3Ω ID -11A -11A International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for


    Original     		PDF 90886C IRHN9130 IRHN93130 -480A/ -100V, MIL-STD-750, MlL-STD-750, IRHN9130 IRHN93130

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    Abstract: No abstract text available
    Text: PD - 90886C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 IRHN9130 100V, P-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN9130 100K Rads (Si) IRHN93130 300K Rads (Si) RDS(on) 0.3Ω 0.3Ω ID -11A -11A International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for


    Original     		PDF 90886C IRHN9130 IRHN93130 -480A/Â -100V, MIL-STD-750, MlL-STD-750,