2SC5238
Abstract: ITR07974 ITR07975 ITR07976 ITR07977 ITR07978
Text: Ordering number:ENN5126 NPN Triple Diffused Planar Silicon Transistor 2SC5238 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).
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ENN5126
2SC5238
100ns
2SC5238]
2SC5238
ITR07974
ITR07975
ITR07976
ITR07977
ITR07978
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2sc5238
Abstract: TA-0415
Text: Ordering number:EN5126 NPN Triple Diffused Planar Silicon Transistor 2SC5238 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).
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EN5126
2SC5238
100ns
2SC5238]
2sc5238
TA-0415
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2SC5245
Abstract: ITR07984 ITR07985 ITR07986 ITR07987 51841 IC163 sanyo 1042
Text: Ordering number:ENN5184A NPN Epitaxial Planar Silicon Transistor 2SC5245 UHF to S-Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz).
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ENN5184A
2SC5245
S21e2
11GHz
2059B
2SC5245]
2SC5245
ITR07984
ITR07985
ITR07986
ITR07987
51841
IC163
sanyo 1042
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51841
Abstract: sanyo 1042 51842 EN518 2SC5245
Text: Ordering number:EN5184A NPN Epitaxial Planar Silicon Transistor 2SC5245 UHF to S-Band Low-Noise Amplifier, OSC Applications Package Dimensions unit:mm 2059B 0.3 0.15 0.2 0.425 [2SC5245] 3 2.1 0 to 0.1 0.425 • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz).
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EN5184A
2SC5245
2059B
2SC5245]
S21e2
11GHz
51841
sanyo 1042
51842
EN518
2SC5245
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transistor a1275
Abstract: a1275 transistor IC A1302
Text: Ordering number:ENN5184A NPN Epitaxial Planar Silicon Transistor 2SC5245 UHF to S-Band Low-Noise Amplifier, OSC Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz).
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ENN5184A
2SC5245
11GHz
2059B
2SC5245]
transistor a1275
a1275 transistor
IC A1302
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2SK2218
Abstract: KT 0038 2SK22
Text: Ordering number:ENN5202 N-Channel Junction Silicon FET 2SK2218 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions unit:mm 2125 [2SK2218] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of FBET process. · Amateur radio equipment. · UHF amplifiers, MIX, OSC, analog switches.
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ENN5202
2SK2218
2SK2218]
25max
2SK2218
KT 0038
2SK22
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2SK2218
Abstract: enn5202
Text: Ordering number:ENN5202 N-Channel Junction Silicon FET 2SK2218 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions • Adoption of FBET process. · Amateur radio equipment. · UHF amplifiers, MIX, OSC, analog switches. · Large | yfs |.
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ENN5202
2SK2218
2SK2218]
25max
2SK2218
enn5202
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN5126 NPN Triple Diffused Planar Silicon Transistor 2SC5238 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).
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ENN5126
2SC5238
100ns
2SC5238]
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LA708
Abstract: DIP30S 5257 LA7140 LC6546N
Text: KNo. N 5257 SA %Y D / = m m m t t .= a —x ‘ No. 5257 / / 90195 D I P 3 0 S V'-Oi, » t f t o r S V £ tY . r ffiffli'fc fc 't'lf L-C CtD/cif TIB C . ^LfccDT- w 7?^< 5 1,'Mi 'iliL hif.i-4-. 33 LA7083, LA7103, I.A7M0, LC6546N 2. n T i] ji'J DIP30S ^ " j fT '-V D M ± & © !¥£
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DIP30S
la7083,
la7103,
la7140,
lc6546n
90195ykÂ
ns5257-1/1ï
LA708
5257
LA7140
LC6546N
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transistor cq 529
Abstract: 2SC5245 51842 CQ 734 G TRANSISTOR cq 802
Text: Ordering number:EN 5184A SAMO N0.5184A i 2SC5245 NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amp, OSC Applications Features • Low noise : NF=0.9dB typ f= 1GHz . : NF = 1.4dB typ (f = 1.5GHz). • High gain : I S21e I 2= lOdB typ (f= 1.5GHz).
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2SC5245
transistor cq 529
51842
CQ 734 G
TRANSISTOR cq 802
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN5126 ._ 2SC5238 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications F eatures • High speed tf = 100ns typ . • High breakdown voltage (Vcbo = 1500V).
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EN5126
2SC5238
100ns
90195YK
TA-0415
D0S0412
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2SK2218
Abstract: No abstract text available
Text: Ordering num ber: E N 5202 _ 2SK2218 N-Channel Junction Silicon FET No.5202 High-Frequency Low-Noise Amp Applications Features • Adoption of FBET process. • Amateur radio equipment. • UHF amplifiers, MIX, OSC, analog switches. • Large I y f8 I .
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EN5202
2SK2218
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