9016 TRANSISTOR Search Results

9016 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

9016 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
P-Channel IGBT Abstract: PTIGBT 600V 10A RUF resistor calculation of IGBT snubber mosfet 8A 900V TO-220 thyristor 5a 600v cross reference Drive Base BJT N-Channel jfet 100V depletion vtom Trench MOSFET Termination Structure Text: Application Note 9016 February, 2001 IGBT Basics 1 by K.S. Oh CONTENTS 1. Introduction. 2. Device structure and operation .	Original	PDF
9016 transistor Abstract: F 9016 transistor npn 9016 transistor 9016 97 G transistor ic st 9016 hFE is transistor 9016 npn transistor 9016 npn Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF
9016 transistor Abstract: F 9016 transistor 9016 st 9016 transistor 9016 npn npn 9016 transistor Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF
9016 transistor Abstract: F 9016 transistor npn 9016 transistor Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF
npn 9016 transistor Abstract: 9016 transistor transistor 9016 npn st 9016 F 9016 transistor 9016 transistor 9016 H 9016 9016 NPN transistor st9016 Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	PDF
transistor mje340 Abstract: MJE340 b c e MJE340 Text: MJE340 Medium Power NPN Transistors Features: • NPN Plastic Medium Power Silicon Transistor. • Useful for High Voltage General Purpose Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E 2.25 Typical	Original	PDF	MJE340 O-126 transistor mje340 MJE340 b c e MJE340
BC477 Abstract: 358 IC datasheet BC477 Text: BC477 General Purpose Transistors Absolute Maximum Ratings Ta = 25°C Parameter Symbol Value Collector-Emitter Voltage VCES 90 Collector-Emitter Voltage VCEO 80 Emitter Base Voltage VEBO 6.0 IC 150 mA Ptot 0.3 1.20 W Tj 200 Tstg -55 to +200 Junction to Case	Original	PDF	BC477 BC477 358 IC datasheet BC477
BU208D Abstract: NPN Transistor 1500V 20a H 9645 Text: BU208D Horizontal Deflection Transistor NPN Silicon Horizontal Defection Transistors with integrated damper diodes are specifically designed for use in large screen colour deflection circuits. Features: • VCES = 1500V VCEO sus = 700V (Minimum). • Low Saturation	Original	PDF	BU208D BU208D NPN Transistor 1500V 20a H 9645
equivalent transistor 2n3704 Abstract: T2N3705 2N3704 2N3705 T2N3704 Text: T2N3704, T2N3705 Series Bipolar Transistors Description: NPN Silicon Planar Epitaxial Transistors. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F G H 5° 1.14 1.40 1.53 K 12.70 - L 1.982 2.082	Original	PDF	T2N3704, T2N3705 equivalent transistor 2n3704 2N3704 2N3705 T2N3704
transistor BC461 Abstract: BC461 BC461 transistor CHARACTERISTICS OF BC461 Text: BC461 Medium Power Transistor Features: • High performance, low frequency devices typically with current ratings 2A. Up to 1W power dissipation. • PNP Epitaxial Planar Silicon Transistors. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39	Original	PDF	BC461 transistor BC461 BC461 BC461 transistor CHARACTERISTICS OF BC461
MJE340 Abstract: MJE340 datasheet MJE340 b c e Text: MJE340 Medium Power NPN Transistors Features: • NPN Plastic Medium Power Silicon Transistor. • Useful for High Voltage General Purpose Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical	Original	PDF	MJE340 O-126 MJE340 MJE340 datasheet MJE340 b c e
MPSA14 Abstract: transistor 7333 Text: MPSA14 NPN Darlington Transistor TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F G H K 5° 1.40 1.14 1.53 12.70 Dimensions : Millimetres Pin Configuration 1. Collector 2. Base 3. Emitter Page 1	Original	PDF	MPSA14 MPSA14 transistor 7333
MJE350 b c e Abstract: Power Transistors TO-126 Case MJE350 Text: MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability. TO-126 Plastic Package	Original	PDF	MJE350 O-126 MJE350 b c e Power Transistors TO-126 Case MJE350
8805 VOLTAGE REGULATOR Abstract: MJE350 b c e MJE350 pnp mje350 Text: MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability. TO-126 Plastic Package	Original	PDF	MJE350 O-126 8805 VOLTAGE REGULATOR MJE350 b c e MJE350 pnp mje350

transistor 2N5415 Abstract: 2N5415 ic tc 4066 diagram Text: 1611580 Feature: • PNP transistors. Description: The 2N5415 are high voltage silicon epitaxial planar PNP transistors in JEDEC TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and	Original	PDF	2N5415 2N5415 transistor 2N5415 ic tc 4066 diagram
7333 A Abstract: Power Transistors TO-126 Case farnell ic 901 BD437 Text: BD437 Medium Power Transistors General Purpose TO-126 Features: • NPN Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C	Original	PDF	BD437 O-126 O-126 7333 A Power Transistors TO-126 Case farnell ic 901 BD437
diode st 4148 Abstract: ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148 1N4001-1N4007 Text: TRANSISTOR & DIODE Transistor -S T 8050 - 1.5A TO-92 - ST 8050 (TO-92) - ST 8550 - 1.5A (TO-92) - ST 8550 (TO-92) - ST 9011 (TO-92) - ST 9012 (TO-92) - ST 9013 (TO-92) - ST 9014 (TO-92 -S T 9015 (TO-92) - ST 9016 (TO-92) -S T 9018 (TO-92) o - MMBT8050LT1 -1.5A (SOT-23)	OCR Scan	PDF	MMBT8050LT1 OT-23) -LL4001-LL4007 -LL4148 1N4001-1N4007 diode st 4148 ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148
JE9016 Abstract: A78G Text: NPN SILICON TRANSISTOR ELECTRON DEVICE JE9016 DESCR IPTIO N The JE 9016 is designed fo r use in A M converter and FM PAC K A G E D IM E N S IO N S in m illim e ters lin ch es 5.2 MAX. RF am p lifie r o f low noise. FE A TU R E S • High to ta l power dissipation. Py : 400 mW)	OCR Scan	PDF	JE9016 JE9016 A78G
transistor c 9018 Abstract: Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor Text: SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Output AM R E C E IV E R r- IF 2 IF1 Conv. 901Ì 901 9012 A F Amp. 9011 SP. 9014 or :9015 7 <1 9013 Output FM R E C E IV E R F M RF 90! 6 rF M Conv. F M IF A M Conv. 9011/8 9016/8 A M / F M IF AF A m o A M / F M IF	OCR Scan	PDF	T0-92B 500fi 10kfi transistor c 9018 Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor
AM9016 Abstract: AM9016EPC AM9016DPC AM9016FPC AM9016EDC AM9016CPC AM9016DDC AM9016CDC AM9016FDC am9016e Text: Am9016 16,384 x 1 D ynam ic R/W Random A ccess M em ory DISTINCTIVE CHARACTERISTICS G E N E R A L D ESCRIPTIO N • • • The A m 9016 is a high speed, 16 k-bit, dynam ic, read/w rite random access m em ory. It is organized as 16,384 words by 1 b it per w ord and is packaged in a standard 16-pin DIP. The	OCR Scan	PDF	MK4116 462mW 150ns 320ns 16-pin, MIL-STD-883 Am9016 16k-bit, AM9016EPC AM9016DPC AM9016FPC AM9016EDC AM9016CPC AM9016DDC AM9016CDC AM9016FDC am9016e
CP1005 Abstract: 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014 Text: fi* £ ,. ¿YrA \ *j i w 'äf? m m H :;1 i Ä \jif- ^ s •'«•J-, m &3W^m¡jfir . Ï 'iS.fi. I FM SERIES AM. FM RADIO TRANSISTOR KIT - ^ttk SELECTION AIV! K M 9000 ¡8a¡$ W bJ . GUIDE FOR RADIO TRANSISTOR KIT Output KM 9012 AM RECEIVER? y Conv. IF KM901I	OCR Scan	PDF	KM90II KM90I5 KM901I/8 KM90II/8 KM90I4 KM9015 KM90I: KM90i to-92a CP1005 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014
9014 ch Abstract: transistor npn c 9014 9018 transistor transistor c 9018 9011 9012 9013 9014 9018 100-10L 9018 transistor 9013 NPN audio output 9011 9012 pnp transistor Text: »v'.-T i V.y*, 7 “ •1 v í- j m £?\| P Im I I I m . C-iS.fi w - f , , :;1 \| AM. FM RADIO TRANSISTOR KIT „ L’ J V->.' ., t« V SELECTION CUIDE FOR FIVI RADIO TRANSISTOR KIT A IVI Output KM 9012 AM RECEIVER w AF Amp- IF 2 IF Conv. SP. KM90J4 KM 9011	OCR Scan	PDF	O-92A 9014 ch transistor npn c 9014 9018 transistor transistor c 9018 9011 9012 9013 9014 9018 100-10L 9018 transistor 9013 NPN audio output 9011 9012 pnp transistor
9011 9012 9013 9014 9018 Abstract: 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015 Text: 'ty i / >; •i CL9000 i ÎÏ t it -V, 1'* r-t, i Vj 1t E i SERIES AM FM RADIO TRANSISTOR KIT G U ID E SELECTION FOR AM / FM RADIO TRANSISTOR KIT Output AM R EC EIV ER? Y _ son IF2 IF1 Conv. H 90 H 9012 AF Amp. 9014 M 90U SP. or <1 :9015 9013 Output FM R EC EIV ER	OCR Scan	PDF	CL9000 T0-92B 10kfi 9011 9012 9013 9014 9018 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015
transistor 716-analog Abstract: 500MSPS AD9006 Text: □ ANALOG DEVICES FEATURES 500MSPS Encode Rate Very Low Input Capacitance: 8pF 30dB SNR @ 200MHz Analog Input MIL-STD-883 Available Bipolar Input Range ± 1 V Demultiplexed Outputs (AD9016) MIL-STD-883-Compliant Versions Available High Speed 6-Bit A/D Converters	OCR Scan	PDF	AD9006/AD9016 500MSPS 200MHz MIL-STD-883 AD9016) MIL-STD-883-Compliant AD9006 AD9016 500MSPS. transistor 716-analog

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9016 TRANSISTOR Search Results

9016 TRANSISTOR Result Highlights (5)

9016 TRANSISTOR Datasheets Context Search

P-Channel IGBT

9016 transistor

9016 transistor

9016 transistor

npn 9016 transistor

transistor mje340

BC477

BU208D

equivalent transistor 2n3704

transistor BC461

MJE340

MPSA14

MJE350 b c e

8805 VOLTAGE REGULATOR

transistor 2N5415

7333 A

diode st 4148

JE9016

transistor c 9018

AM9016

CP1005

9014 ch

9011 9012 9013 9014 9018

transistor 716-analog