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    Vishay Intertechnologies F339X136848MFP2B0

    Safety Capacitors .068uF 480Vac20%
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    Mouser Electronics F339X136848MFP2B0 295
    • 1 $1.25
    • 10 $0.855
    • 100 $0.7
    • 1000 $0.492
    • 10000 $0.443
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    Cornell Dubilier Electronics Inc MPX336K305R

    Film Capacitors 33uF 305V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MPX336K305R 78
    • 1 $14.35
    • 10 $10.33
    • 100 $8.19
    • 1000 $7.04
    • 10000 $7.04
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    ETA-USA MDA24-36SX-W-II

    Desktop AC Adapters 24W 36V 0.67A INTERCHANGE AC CLIPS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MDA24-36SX-W-II 31
    • 1 $39.7
    • 10 $38.48
    • 100 $32.98
    • 1000 $32.98
    • 10000 $32.98
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    Kobiconn 161-368M1-EX

    DC Power Connectors Phone Jack 3.5mm 4 Pole
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 161-368M1-EX
    • 1 $2.25
    • 10 $1.73
    • 100 $1.57
    • 1000 $1.32
    • 10000 $1.11
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    Banner Engineering Corp MAR3616NX485Q

    Safety Light Curtains MAR3616NX485Q 16CH 2-STICK MA RECEIVER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MAR3616NX485Q
    • 1 $1049
    • 10 $1049
    • 100 $1049
    • 1000 $1049
    • 10000 $1049
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    8M X 36 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    80 pin simm flash

    Abstract: 80 pin simm flash 64mb Flash SIMM 80 64mb INTEL 80 Flash SIMM 80 E28F640J3 EDI7F2328XDNSN EDI7F328XDNSN
    Text: EDI7F328XDNSN EDI7F2328XDNSN White Electronic Designs ADVANCED* 8M x 32 / 2 x 8Mx 32; INTEL J3 BASED, FLASH FEATURES GENERAL DESCRIPTION 8M x 32 and 2 x 8M x 32 Densities The EDI7F328XDNSN and EDI7F2328XDNSN are organized as one and two banks of 8M x 32 respectively.


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    PDF EDI7F328XDNSN EDI7F2328XDNSN EDI7F328XDNSN EDI7F2328XDNSN E28F640J3, 120-150ns. E28F640J3 128Kb WED7F328XDNSN100C 100ns 80 pin simm flash 80 pin simm flash 64mb Flash SIMM 80 64mb INTEL 80 Flash SIMM 80 E28F640J3

    Untitled

    Abstract: No abstract text available
    Text: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8


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    PDF UG08E14488HSG-6 200Pin U08E14488HSG-6 400mil 16bit 240mil 2000mil)

    HYS64V8000GU-10

    Abstract: HYS72V8000GU-10 HYS72
    Text: 3.3V 8M x 64-Bit SDRAM Module 3.3V 8M x 72-Bit SDRAM Module HYS64V8000GU-10 HYS72V8000GU-10 168 pin unbuffered DIMM Modules Preliminary Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module • 1 bank 8M x 64, 8M x 72 organisation


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    PDF 64-Bit 72-Bit HYS64V8000GU-10 HYS72V8000GU-10 L-DIM-168-23 DM168-23 HYS64V8000GU-10 HYS72V8000GU-10 HYS72

    HYS64V8000GU-10

    Abstract: HYS72V8000GU-10
    Text: 3.3V 8M x 64-Bit SDRAM Module 3.3V 8M x 72-Bit SDRAM Module HYS64V8000GU-10 HYS72V8000GU-10 168 pin unbuffered DIMM Modules • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • 1 bank 8M x 64, 8M x 72 organisation


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    PDF 64-Bit 72-Bit HYS64V8000GU-10 HYS72V8000GU-10 L-DIM-168-23 DM168-23 HYS64V8000GU-10 HYS72V8000GU-10

    80 pin simm flash 64mb

    Abstract: dq24 E28F640J3 Flash SIMM 80 64mb E28F640
    Text: WED7F328XDNSN WED7F2328XDNSN White Electronic Designs HEADLINE FEATURES: DESCRIPTION: • 8M x 32 and 2 x 8m x 32 Densities The WED7F328XDNSN and WED7F2328XDNSN are organized as one and two banks of 8M x 32 respectively. The modules are based on Intel's E28F640J3,


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    PDF WED7F328XDNSN WED7F2328XDNSN WED7F328XDNSN WED7F2328XDNSN E28F640J3, 120-150ns. E28F640J3 128Kb 120ns 150ns 80 pin simm flash 64mb dq24 E28F640J3 Flash SIMM 80 64mb E28F640

    sdram pcb layout gerber

    Abstract: V43658R04VATG-10PC
    Text: MOSEL VITELIC PRELIMINARY V43658R04VATG-10PC 3.3 VOLT 8M x 64 using 8M x 16 PC100 UNBUFFERED SDRAM MODULE Features Description • 168 Pin Unbuffered 8,388,608 x 64 bit Oganization SDRAM DIMM ■ Utilizes High Performance 128 Mbit, 8M x 16 SDRAM in TSOPII-54 Packages


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    PDF V43658R04VATG-10PC PC100 TSOPII-54 V43658R04VATG-10PC sdram pcb layout gerber

    Flash SIMM 80 64mb

    Abstract: 80 pin simm flash E28F640 80 pin simm flash 64mb
    Text: EDI7F328XDNSN EDI7F2328XDNSN White Electronic ADVANCED* 8M x 32 / 2 x 8Mx 32; INTEL J3 BASED, FLASH FEATURES GENERAL DESCRIPTION „ 8M x 32 and 2 x 8M x 32 Densities „ Based on Intel’s Strataflash J3 family of Flash Devices The EDI7F328XDNSN and EDI7F2328XDNSN are


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    PDF EDI7F328XDNSN EDI7F2328XDNSN E28F640J3 128Kb WED7F328XDNSN120C WED7F328XDNSN150C 100ns Flash SIMM 80 64mb 80 pin simm flash E28F640 80 pin simm flash 64mb

    pc133u-222-542-a

    Abstract: V43658R04VATG-75PC
    Text: V43658R04VATG-75PC 3.3 VOLT 8M x 64 using 8M x 16 PC133 UNBUFFERED SDRAM MODULE MOSEL VITELIC PRELIMINARY Features Description • 168 Pin Unbuffered 8,388,608 x 64 bit Oganization SDRAM DIMM ■ Utilizes High Performance 128 Mbit, 8M x 16 SDRAM in TSOPII-54 Packages


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    PDF V43658R04VATG-75PC PC133 TSOPII-54 V43658R04VATG-75PC pc133u-222-542-a

    Flash SIMM 80 64mb

    Abstract: 80 pin simm flash 80 pin simm flash 64mb intel strataflash j3 Flash SIMM 80 Intel J3 E28F640J3 EDI7F2328XDNSN EDI7F328XDNSN simm 64MB
    Text: Electronic Designs, Inc. EDI7F328XDNSN / EDI7F2328XDNSN Datasheet ADVANCE 8M X 32 / 2 X 8M X 32; INTEL J3 based, Flash General Description Pin Configurations The EDI7F328XDNSN and EDI7F2328XDNSN are organized as one and two banks of 8M x 32 respectively. The modules are based on Intel's


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    PDF EDI7F328XDNSN EDI7F2328XDNSN EDI7F2328XDNSN E28F640J3, 120-150ns WED7F328XDNSN100C WED7F328XDNSN120C WED7F328XDNSN150C 100ns Flash SIMM 80 64mb 80 pin simm flash 80 pin simm flash 64mb intel strataflash j3 Flash SIMM 80 Intel J3 E28F640J3 simm 64MB

    V43658R04VATG-75PC

    Abstract: No abstract text available
    Text: MOSEL VITELIC V43658R04VATG-75PC 3.3 VOLT 8M x 64 using 8M x 16 PC133 UNBUFFERED SDRAM MODULE PRELIMINARY Features Description • 168 Pin Unbuffered 8,388,608 x 64 bit Oganization SDRAM DIMM ■ Utilizes High Performance 128 Mbit, 8M x 16 SDRAM in TSOPII-54 Packages


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    PDF V43658R04VATG-75PC PC133 TSOPII-54 V43658R04VATG-75PC

    V43658R04VATG-75

    Abstract: No abstract text available
    Text: MOSEL VITELIC V43658R04VATG-75 3.3 VOLT 8M x 64 using 8M x 16 PC133 UNBUFFERED SDRAM MODULE PRELIMINARY Features Description • 168 Pin Unbuffered 8,388,608 x 64 bit Oganization SDRAM DIMM ■ Utilizes High Performance 128 Mbit, 8M x 16 SDRAM in TSOPII-54 Packages


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    PDF V43658R04VATG-75 PC133 TSOPII-54 V43658R04VATG-75

    Untitled

    Abstract: No abstract text available
    Text: V43658R04VATG-75 3.3 VOLT 8M x 64 using 8M x 16 PC133 UNBUFFERED SDRAM MODULE MOSEL VITELIC PRELIMINARY Features Description • 168 Pin Unbuffered 8,388,608 x 64 bit Oganization SDRAM DIMM ■ Utilizes High Performance 128 Mbit, 8M x 16 SDRAM in TSOPII-54 Packages


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    PDF V43658R04VATG-75 PC133 TSOPII-54 V43658R

    Untitled

    Abstract: No abstract text available
    Text: V43658R04VATG-75 3.3 VOLT 8M x 64 using 8M x 16 PC133 UNBUFFERED SDRAM MODULE MOSEL VITELIC PRELIMINARY Features Description • 168 Pin Unbuffered 8,388,608 x 64 bit Oganization SDRAM DIMM ■ Utilizes High Performance 128 Mbit, 8M x 16 SDRAM in TSOPII-54 Packages


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    PDF V43658R04VATG-75 PC133 TSOPII-54 V43658R04VATG-75

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WED7F328_2328XDNSN 8Mx32 and 2x 8M x 32 Densities FEATURES DESCRIPTION The WED7F328XDNSN and WED7F2328XDNSN are organized as one and two banks of 8M x 32 respectively. The modules are based on Intel's E28F640J3, 8M x 8 / 4M x 16 device family. Both modules offer access times


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    PDF WED7F328 2328XDNSN 8Mx32 WED7F328XDNSN WED7F2328XDNSN E28F640J3, 120-150ns. E28F640J3

    Flash SIMM 80 64mb

    Abstract: E28F640J3 8mx32 simm 72 pin 80 pin simm flash 64mb 8mx32 80-pin
    Text: White Electronic Designs WED7F328_2328XDNSN 8Mx32 and 2x 8M x 32 Densities FEATURES DESCRIPTION „ 8Mx32 and 2x 8M x 32 Densities „ Based on Intel's Strataflash J3 family of Flash Devices The WED7F328XDNSN and WED7F2328XDNSN are organized as one and two banks of 8M x 32 respectively.


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    PDF WED7F328 2328XDNSN 8Mx32 WED7F328XDNSN WED7F2328XDNSN E28F640J3, 120-150ns. E28F640J3 Flash SIMM 80 64mb E28F640J3 8mx32 simm 72 pin 80 pin simm flash 64mb 8mx32 80-pin

    05564

    Abstract: CY7C1522V18 CY7C1523V18 CY7C1524V18 CY7C1529V18
    Text: CY7C1522V18 CY7C1529V18 CY7C1523V18 CY7C1524V18 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features Functional Description • 72-Mbit density 8M x 8, 8M x 9, 4M x 18, 2M x 36 The CY7C1522V18, CY7C1529V18, CY7C1523V18, CY7C1524V18 are 1.8V Synchronous Pipelined SRAMs


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    PDF CY7C1522V18 CY7C1529V18 CY7C1523V18 CY7C1524V18 72-Mbit CY7C1522V18, CY7C1529V18, CY7C1523V18, CY7C1524V18 05564 CY7C1522V18 CY7C1523V18 CY7C1529V18

    Untitled

    Abstract: No abstract text available
    Text: CY7C1516V18 CY7C1527V18 CY7C1518V18 CY7C1520V18 72-Mbit DDR-II SRAM 2-Word Burst Architecture Features Functional Description • 72-Mbit density 8M x 8, 8M x 9, 4M x 18, 2M x 36 The CY7C1516V18, CY7C1527V18, CY7C1518V18, and CY7C1520V18 are 1.8V Synchronous Pipelined SRAM


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    PDF CY7C1516V18 CY7C1527V18 CY7C1518V18 CY7C1520V18 72-Mbit 300-MHz

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P0823BTE-C75/H 8M X 64 SDRAM DIMM, Unbuffered, based on 8M X 8, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P0823BTE-C75/H is a 8M bit X 64 Synchronous Dynamic RAM high density memory module. The AVED Memory Products AMP366P0823BTE-C75/H consists of eight CMOS 8M X 8 bit with 4 banks Synchronous


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    PDF AMP366P0823BTE-C75/H AMP366P0823BTE-C75/H 400mil 168-pin 100MHz PC100

    V43658Y04VATG-75

    Abstract: pc133u 168-PIN
    Text: MOSEL VITELIC PRELIMINARY V43658Y04VATG-75 64MB 168-PIN 133 MHZ SDRAM UNBUFFERED SODIMM 3.3 VOLT, 8M x 64 The V43658Y04VATG-75 memory module is organized 8,388,608 x 64 bits in a 144 pin SODIMM. The 8M x 64 memory module uses 4 Mosel-Vitelic 8M x 16 SDRAM. The x64 modules


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    PDF V43658Y04VATG-75 168-PIN V43658Y04VATG-75 pc133u

    CY7C1570KV18-550BZI

    Abstract: CY7C1570KV18
    Text: CY7C1566KV18, CY7C1577KV18 CY7C1568KV18, CY7C1570KV18 PRELIMINARY 72-Mbit DDR-II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency Features Configurations • 72 Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36) With Read Cycle Latency of 2.5 cycles:


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    PDF CY7C1566KV18, CY7C1577KV18 CY7C1568KV18, CY7C1570KV18 72-Mbit CY7C1566KV18 CY7C1577KV18 CY7C1568KV18 CY7C1570KV18-550BZI CY7C1570KV18

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 3.3V 8M x 64-Bit SDRAM Module 3.3V 8M x 72-Bit SDRAM Module HYS64V8000GU-10 HYS72V8000GU-10 168 pin unbuffered DIMM Modules * 168 Pin JE D E C Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Modules for PC main memory applications * 1 bank 8M x 64, 8M x 72 organisation


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    PDF 64-Bit 72-Bit HYS64V8000GU-10 HYS72V8000GU-10 L-DIM-168-23 DM168-23.

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 3.3V 8M x 64-Bit SDRAM Module 3.3V 8M x 72-Bit SDRAM Module HYS64V8000GU-10 HYS72V8000GU-10 168 pin unbuffered DIMM Modules • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Modules for PC main memory applications • 1 bank 8M x 64, 8M x 72 organisation


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    PDF 64-Bit 72-Bit HYS64V8000GU-10 HYS72V8000GU-10 Interle45 L-DIM-168-23

    HYM532814

    Abstract: HY531000AJ HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC
    Text: QUICK REFERENCE SIMM MODULE 5V SIMM TYPE SIZE 72 Pin 4MB DESCRIPTION 1M X 32 8 IM M 1Mx36 8M B 2M 2M 16MB 4M 4M 32M B 8M 8M NO TE : 4 X X X X X X 32 36 32 36 32 36 PART NO. SPEED REF. DEVICE USED HEIGHT EDO, S L HYM532124AW/ATW 60/70/80 IK HY5118164BUC/BTC x 2


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    PDF HYM532124AW/ATW 532100AM HYM532120W/TW HYMS32120AW/ATW HY5118164BUC/BTC HY514400AJ HY5118160JC/TC HY5118160BJC/BTC HY531000AJ HYM532814 HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC

    Untitled

    Abstract: No abstract text available
    Text: STI648104G1-70VG 144-PIN SO-DIMMS 8M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI648104G1-70VG is a 8M x 64 bits Dynamic RAM high density memory module. The Simple Technology STI648104G1-70VG consist of eight CMOS 8M x


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    PDF STI648104G1-70VG 144-PIN 124ns cycles/64ms STI648104G1-70VG 32-pin 400-mil