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    8C SOT 23 Search Results

    8C SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
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    8C SOT 23 Price and Stock

    Bourns Inc CDSOT23-T08C-Q

    ESD Protection Diodes / TVS Diodes TVS Diode 8V 500W BIDIR SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CDSOT23-T08C-Q 9,817
    • 1 $0.37
    • 10 $0.316
    • 100 $0.219
    • 1000 $0.149
    • 10000 $0.148
    Buy Now

    Bourns Inc CDSOT23-T08C

    ESD Protection Diodes / TVS Diodes TVS Diode Array 8VOLT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CDSOT23-T08C 3,684
    • 1 $0.48
    • 10 $0.361
    • 100 $0.258
    • 1000 $0.186
    • 10000 $0.141
    Buy Now

    8C SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8c SOT 23

    Abstract: marking 8C MMBZ5228B 8c marking 8c sot23
    Text: SEMICONDUCTOR MMBZ5228B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8C No. 1 Item Marking Device Mark 8C MMBZ5228B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


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    PDF MMBZ5228B OT-23 8c SOT 23 marking 8C MMBZ5228B 8c marking 8c sot23

    AME5140

    Abstract: AME5140AEEV 3S10P AME5140AEVA AME5140BEQA PWM 003 1AME BFK 35
    Text: AME AME5140 n General Description 1.6 MHz Boost Converter With 30V Internal FET Switch n Typical Application The AME5140 switching regulator is current-mode boost converters operating at fixed frequency of 1.6 MHz. The use of SOT-25/TSOT-25, DFN-8C & MSOP-8 packages, made possible by the minimal power loss of the


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    PDF AME5140 AME5140 OT-25/TSOT-25, 1049-DS5140-G AME5140AEEV 3S10P AME5140AEVA AME5140BEQA PWM 003 1AME BFK 35

    AME5145

    Abstract: AME5145AEEV AME5145AEQA AME5145AEVA
    Text: AME AME5145 n General Description 1.6 MHz Boost Converter With 30V Internal FET Switch n Typical Application The AME5145 switching regulator is current-mode boost converters operating at fixed frequency of 1.6 MHz. The use of SOT-25/TSOT-25, DFN-8C & MSOP-8 packages, made possible by the minimal power loss of the


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    PDF AME5145 AME5145 OT-25/TSOT-25, 1049-DS5145-B AME5145AEEV AME5145AEQA AME5145AEVA

    Untitled

    Abstract: No abstract text available
    Text: AME AME5145 n General Description 1.6 MHz Boost Converter With 30V Internal FET Switch n Typical Application The AME5145 switching regulator is current-mode boost converters operating at fixed frequency of 1.6 MHz. The use of SOT-25/TSOT-25, DFN-8C & MSOP-8 packages, made possible by the minimal power loss of the


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    PDF AME5145 AME5145 OT-25/TSOT-25, 1049-DS5145-A

    marking 8C

    Abstract: No abstract text available
    Text: MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3 Digital Transistors BRT R1 = 47 kW, R2 = 47 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


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    PDF MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3 DTC144E/D marking 8C

    SDTC144EET1G

    Abstract: No abstract text available
    Text: MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3 Digital Transistors BRT R1 = 47 kW, R2 = 47 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


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    PDF MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3 DTC144E/D SDTC144EET1G

    Untitled

    Abstract: No abstract text available
    Text: MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3 Digital Transistors BRT R1 = 47 kW, R2 = 47 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single


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    PDF MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3 DTC144E/D

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors LDTC144EKALT1G 3 • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow


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    PDF LDTC144EKALT1G

    DTC115EET1G

    Abstract: DTC144EET1G DTC114EET1 DTC114EET1G DTC114YET1 DTC114YET1G DTC124EET1 DTC124EET1G DTC144EET1 DTC123JET1G
    Text: DTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


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    PDF DTC114EET1 SC-75/SOT-416 DTC114EET1/D DTC115EET1G DTC144EET1G DTC114EET1G DTC114YET1 DTC114YET1G DTC124EET1 DTC124EET1G DTC144EET1 DTC123JET1G

    MUN5214T1

    Abstract: MARKING MP SOT-323 SOT-323 8P marking code MS SOT323 NPN TRANSISTOR SC-70 MUN5211T1 MUN5211T1G MUN5212T1 MUN5212T1G MUN5213T1
    Text: MUN5211T1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


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    PDF MUN5211T1 SC-70/SOT-323 MUN5211T1/D MUN5214T1 MARKING MP SOT-323 SOT-323 8P marking code MS SOT323 NPN TRANSISTOR SC-70 MUN5211T1G MUN5212T1 MUN5212T1G MUN5213T1

    MUN5214T1

    Abstract: c403c MUN5211T1 MUN5211T1G MUN5212T1 MUN5212T1G MUN5213T1 MUN5213T1G MUN5214T1G
    Text: MUN5211T1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


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    PDF MUN5211T1 SC-70/SOT-323 MUN5211T1/D MUN5214T1 c403c MUN5211T1G MUN5212T1 MUN5212T1G MUN5213T1 MUN5213T1G MUN5214T1G

    marking 81J

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA MMBZ5221BLT1 SERIES 225mW SOT-23 225 mW SOT-23 Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 3 Cathode Zener Voltage Regulator Diodes 1 Anode 3 1 2 MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 seconds


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    PDF MMBZ5221BLT1 225mW OT-23 236AB) OT-23 marking 81J

    marking 8A sot-23

    Abstract: zener f 24 8b 8Q SOT 23 ZENER DIODES SOT-23 81P MMBZ5228BLT1 MMBZ5260BLT1 equivalent Zener diode MMBZ5232BLT1 Zener Diode SOT-23 marking B J13 ZENER MARKING MMBZ5222BLT1
    Text: LESHAN RADIO COMPANY, LTD. SEMICONDUCTOR TECHNICAL DATA MMBZ5221BLT1 SERIES 225mW SOT-23 225 mW SOT-23 Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 3 Cathode Zener Voltage Regulator Diodes 1 Anode 3 1 2 MAXIMUM CASE TEMPERATURE FOR SOLDERING


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    PDF MMBZ5221BLT1 225mW OT-23 236AB) OT-23 marking 8A sot-23 zener f 24 8b 8Q SOT 23 ZENER DIODES SOT-23 81P MMBZ5228BLT1 MMBZ5260BLT1 equivalent Zener diode MMBZ5232BLT1 Zener Diode SOT-23 marking B J13 ZENER MARKING MMBZ5222BLT1

    Motorola rectifiers zener diodes

    Abstract: motorola diode smb diode zener motorola
    Text: Table of Contents D iscre te P ro d u c t L in e s . 8C-70/SOT-323 D e vice s. RF Transistors .


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    PDF 8C-70/SOT-323 OT-23 Motorola rectifiers zener diodes motorola diode smb diode zener motorola

    Untitled

    Abstract: No abstract text available
    Text: MPSA56/MPSW56/MMBTA56 £ 5 | National m im Semiconductor MPSA56 / if M MMBTA56 MPSW56 C iJ ir È 10-92 N ^ c 7^7 ! TO-236 (SOT- 23 TO- 226AE Tl/G/10100-5 B. c TL/G/10100-1 8c TL/G/10100-4 PNP General Purpose Amplifier Electrical Characteristics Symbol = 25°c unless otherwise noted


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    PDF MPSA56/MPSW56/MMBTA56 MPSA56 MPSW56 MMBTA56 TL/G/10100-1 O-236 226AE Tl/G/10100-5 TL/G/10100-4

    ACS1000

    Abstract: No abstract text available
    Text: /m ACS1000 SERIES SURFACE MOUNT SILICON SCHOTTKY BARRIER DIODES DESCRIPTION: PACKAGE STYLE SOT-23 PACKAGE MU A e c I AS SHOWN V AS SHOWN P.D. 100mW @ TC=25°C D G H J K L S V M LU M É t m HIN MAX 3.04 2 8C 1.40 1.20 1.11 089 0 37 0.50 1.78 2.04 0 313 0.100


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    PDF OT-23 ACS1000 OC807 100mW 410MV/1 0MA/15MA ACS1001S ACS1001SP ACS1001CC

    MMBZ5228B

    Abstract: TMPZ5234B MMBZ52 MMBZ5226B MMBZ5227B MMBZ5229B MMBZ5230B TMPZ5229B TMPZ5230B MMBZ5232B
    Text: JGD MMBZ52 - SERIES O SURFACE MOUNT ZENER DIODES/SOT - 23 350mW CrossReference Dynamic Test Test Nominal Dynamic Imped. Current Current Imped. Zen.Vltg. Marking / i_ + @lzk W XZx @ Izt Code a Part No. MMBZ5226B Vz V TMPZ5226B Zzt(Q ) lzt( mA) Zzk(Q) lzk( mA)


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    PDF MMBZ52 350mW MMBZ5226B TMPZ5226B MMBZ5227B TMPZ5227B MMBZ5228B TMPZ5228B MMBZ5229B TMPZ5229B TMPZ5234B MMBZ5230B TMPZ5230B MMBZ5232B

    transistor bc 7-40

    Abstract: sot marking code G4 sot-23 MARKING CODE GS 5 silicon npn planar rf transistor sot 143 marking t12 sot-23 marking code 721 telefunken bfs20 telefunken transistor transistor bc 237 npn DQDS311
    Text: TELEFUNKEN ELECTRONIC aie D a^EQDSb DQDS311 *1 W È M G G Marked with: NA TTHtLitFiyJKlKilKl electronic Marked with: G4 Creative Tèchnotogies BFS20 BFS 20 R Silicon NPN Epitaxial Planar RF Transistor Applications: General in RF range In thick and thin film circuits


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    PDF DQDS311 BFS20 569-GS transistor bc 7-40 sot marking code G4 sot-23 MARKING CODE GS 5 silicon npn planar rf transistor sot 143 marking t12 sot-23 marking code 721 telefunken bfs20 telefunken transistor transistor bc 237 npn DQDS311

    transistor bc 930

    Abstract: transistor bc 248 transistor BC 247 cf930 BC 247 sot-23 D200-PA E33681 HAT2195WP BC 247 b transistor SOT-23 marking BF
    Text: TELEFUNKEN ELECTRONIC filC D • CF 930 Marked with: CF 5 YHILilPQJMIKiM electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: QDDSBfifiO r- 3 / -zr Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;


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    PDF ft-11 569-GS 000s154 hal66 if-11 transistor bc 930 transistor bc 248 transistor BC 247 cf930 BC 247 sot-23 D200-PA E33681 HAT2195WP BC 247 b transistor SOT-23 marking BF

    mosfet marking code AL sot-23

    Abstract: transistor marking code 24 TRANSISTOR MARKING 24 24 marking transistor transistor marking code AL transistor B 722 MARKING CODE 24 TRANSISTOR Amplifier "marking code" D code marking 2M sot-23 MOSFET S690T
    Text: TELEFUNKEN EL ECT RONI C 61C D • fiTBDDTb 0 0 0 5 4 5 b S 690 T trKLKFdDKlKIKl electronic Creative Technologies 4 ■ AL 66 _ r ~ 3 i- L i Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier


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    PDF 569-GS mosfet marking code AL sot-23 transistor marking code 24 TRANSISTOR MARKING 24 24 marking transistor transistor marking code AL transistor B 722 MARKING CODE 24 TRANSISTOR Amplifier "marking code" D code marking 2M sot-23 MOSFET S690T

    Transistor marking N 1

    Abstract: TRANSISTOR BC 416 b Transistor marking S S416T TRANSISTOR MARKING CODE RE TRANSISTOR BC 416 b pnp transistor marking ra RF 3709 Z MARKING CODE Transistor N transistor 711
    Text: TELEFUNKEN ELECTRONIC V filC D TTKLIiFlDtNlKlKl electronic • flRSDO^b 0005415 T ■ ALGG T -7/-/5" S 416 T Marked with: QA Creative Technologies Silicon PNP RF Transistor Applications: In RF-IF amplifiers especially in thick and thin film circuits Dimensions In mm


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    PDF 569-GS Transistor marking N 1 TRANSISTOR BC 416 b Transistor marking S S416T TRANSISTOR MARKING CODE RE TRANSISTOR BC 416 b pnp transistor marking ra RF 3709 Z MARKING CODE Transistor N transistor 711

    BF993

    Abstract: 1S marking transistor transistor bc 132
    Text: TELEFUNKEN ELECTRONIC A1C D ¥i Li(FyMKIKl electronic Creative Technologies • AT20{nb 0005577 BF 993 Marked with: ME - T -31 -=25 N-Channel Dual Gate MOS*Fieldeffect Tetrode •Depletion Mode Applications: Input- and Mlxerstages especially for FM- and VHF TV-tuners up to 300 MHz


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    PDF 569-GS BF993 1S marking transistor transistor bc 132

    BF681

    Abstract: telefun* transistor pnp bf 681 marking code transistor fb transistor 6B transistor bc 470 telefunken C80 v 681 Telefunken power electronic transistor TRANSISTOR BC 950 sot-23 Marking DL
    Text: TELEFUNKEN ELECTRONIC IMI electronic flic D • fl'iSDO'îb 000525Ô 0 BF 681 ~r - CreativeTechnologies Silicon PNP BF Transistor Applications: UHF/VHF oscillator and mixer stages Features: • High power gain • High reverse attenuation • Low noise figure


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    PDF T15/S54. ft-11 569-GS 000s154 hal66 if-11 BF681 telefun* transistor pnp bf 681 marking code transistor fb transistor 6B transistor bc 470 telefunken C80 v 681 Telefunken power electronic transistor TRANSISTOR BC 950 sot-23 Marking DL

    telefunken ta 750

    Abstract: No abstract text available
    Text: TELEFUNKEN ELECTRONIC 61C D milFyiMiN] electronic • fl'iEOQ'ib Q 0 0 5 M 20 3 ■ ALGG ‘ S 662 T Creative Technologies Silicon NPN RF Planar Transistor Applications; Gain controlled UHF/VHF Input stages Features: • High power gain • Low noise figures


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    PDF 569-GS telefunken ta 750