Untitled
Abstract: No abstract text available
Text: 1N5916 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage4.3 @I(Z) (A) (Test Condition)87m Tolerance (%)20 P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.6.0 Temp Coef pp/10k Maximum Operating Temp (øC)200õ Package StyleDO-41
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1N5916
pp/10k
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Untitled
Abstract: No abstract text available
Text: 1N5916B Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage4.3 @I(Z) (A) (Test Condition)87m Tolerance (%)5 P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.6.0 Temp Coef pp/10k Maximum Operating Temp (øC)200õ Package StyleDO-41
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1N5916B
pp/10k
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AO3407
Abstract: 87m diode
Text: AO3407 30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS ON , Vgs@-10V, Ids@ 4.1A < 64.5m Ω RDS(ON), [email protected], [email protected] < 87m Ω Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L
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AO3407
OT-23-3L
300us,
AO3407
87m diode
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g546a2
Abstract: G546B2 G546B1 G546A1P1Uf G546A1 G546B2 MOSFET G546B2P1UF G546A2P1UF G546B1P1UF G546B1P1U
Text: GMT- V4.0 G546 Dual Power Distribution Switch General Description The G546 is an integrated dual channel 87mΩ power switch for self-powered and bus-powered Universal Serial Bus USB applications. Several Protection features include current limiting with foldback, and thermal
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-400C
G546A2P1U
G546A2P1Uf
G546B1P1U
G546B1P1Uf
G546B2P1U
G546B2P1Uf
g546a2
G546B2
G546B1
G546A1P1Uf
G546A1
G546B2 MOSFET
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Abstract: No abstract text available
Text: 1N5916C Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage4.3 @I(Z) (A) (Test Condition)87m Tolerance (%)2 P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.6.0 Temp Coef pp/10k Maximum Operating Temp (øC)200õ Package StyleDO-41
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1N5916C
pp/10k
StyleDO-41
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G546
Abstract: OC2 mosfet
Text: G546 Global Mixed-mode Technology Inc. Dual Power Distribution Switch Features General Description 87mΩ High-Side MOSFET Available with 4 Versions of Current Limits with Foldback Operating Range:2.7V to 5.5V 400µS Typical Rise Time
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Abstract: No abstract text available
Text: Dual P-channel MOSFET ELM14803AA-N •General description ■Features ELM14803AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. • • • • Vds=-30V Id=-5A (Vgs=-10V) Rds(on) < 52mΩ (Vgs=-10V) Rds(on) < 87mΩ (Vgs=-4.5V)
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ELM14803AA-N
ELM14803AA-N
Paramete100
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AO3414
Abstract: smd diode S
Text: MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3414 AO3414 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features (VGS = 4.5V) RDS(ON) 63m (VGS = 2.5V) RDS(ON) 87m (VGS = 1.8V) 1 0.55 50m 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1
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KO3414
AO3414)
OT-23
AO3414
smd diode S
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A7 SMD TRANSISTOR
Abstract: SMD a7 Transistor smd transistor marking a7 smd TRANSISTOR sot-23 a7 smd transistor A7 KO3407 smd transistor A7 s 52 smd a7 smd transistor A7 sot 23 smd diode a7
Text: Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3407 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 RDS ON 87m 1 (VGS = -10V) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -4.5V) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1
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KO3407
OT-23
A7 SMD TRANSISTOR
SMD a7 Transistor
smd transistor marking a7
smd TRANSISTOR sot-23 a7
smd transistor A7
KO3407
smd transistor A7 s 52
smd a7
smd transistor A7 sot 23
smd diode a7
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Untitled
Abstract: No abstract text available
Text: AO3407 P-Channel Enhancement Mode Field Effect Transistor TO-236 Top View SOT-23 Features V DS (V) = -30V I D = -4.1 A D RDS(ON) < 52m Ω (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) S G General Description The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This
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AO3407
O-236
OT-23)
AO3407
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LDP4803ET1G Dual P-Channel Enhancement Mode Field Effect Transistor Features VDS V = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) S1 S2 D2 D2 D1 D1 8 7 6 5 G1 4803 1 SOP-8 top view 2
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LDP4803ET1G
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD US3076-US3376 Preliminary CMOS IC DU AL U SB H I GH -SI DE POWER SWI T CH ̈ DESCRI PT I ON The UTC US3076-US3376 is an integrated dual channel for USB high-side power switch. It particularly designed for self-powered and bus-powered Universal Serial Bus USB applications.
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US3076-US3376
US3076-US3376
QW-R502-424
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UT3414 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UT3414 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in
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UT3414
UT3414
UT3414L-AE3-R
UT3414G-AE3-R
OT-23
QW-R502-248
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LTC2934-2
Abstract: F02MR LTC2934-1 CR2032 3.3V battery
Text: LTC2934 Ultra-Low Power Adjustable Supervisor with Power-Fail Output DESCRIPTION FEATURES n n n n n n n n n 500nA Quiescent Current ±1.5% Max Accuracy over Temperature Operates Down to 1.6V Supply Adjustable Reset Threshold Adjustable Power-Fail Threshold
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LTC2934
500nA
200ms
TSOT-23
16-Lead
LTC2912/LTC2913/
LTC2914
LTC2915/LTC2916/
LTC2917/LTC2918
10-Lead
LTC2934-2
F02MR
LTC2934-1
CR2032 3.3V battery
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Untitled
Abstract: No abstract text available
Text: NEC ELECTRONICS INC b2E D • bMB7S2S ÜQ36mb 2Mb * N E C E DATA SHEET \H = C LIGHT EMITTING DIODE NDL5300 ELECTRON DEVICE 1 3 0 0 nm OPTICAL FIBER C O M M U N IC A TIO N InGaAsP LIG H T EM ITTIN G DIODE DESCRIPTION NOL53QO is an InGaAsP double heterostructure long wavelength LED.
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Q36mb
NDL5300
NOL53QO
42752S
DL5300
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unitrode 655
Abstract: M4302 M4300 UM4300 UM4301 UM4306 UM7300 UM7301 jm95 00103595
Text: PIN DIODE UM4300 SERIES UM7300 SERIES For A tte n u a to r A p p lic a tio n s Features • Extremely low distortion performance • Useful frequency range extends below 500 KHz • Power dissipation to 20W UM4300 • Capacitance as low as 0.7 pF (UM7300)
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UM4300)
UM7300)
UM4300
UM7300
unitrode 655
M4302
M4300
UM4301
UM4306
UM7301
jm95
00103595
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2SK797
Abstract: No abstract text available
Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION FEATURES 2SK797 The 2SK797 is N-Channel MOS Field Effect Power Transistor designed fo r solenoid, m otor and lamp driver. PACKAGE DIMENSIONS in m illim e te rs inches • Gate Drive — Logic level —
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2SK797
2SK797
RS39726
1987M
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet AS3802 CDMA/FM RECEIVE AGC AMPLIFIER AS3802 Austria Mikro Systeme International AG Key Features General Description □ S upports dual m ode operation. □ -50 to +50db gain control guaranteed. The A S 3802 is a gain controlled am plifier designed
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AS3802
IS-95
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet AS3802 CDMA/FM RECEIVE AGC AMPLIFIER AS3802 Austria Mikro Systeme International AG Key Features General Description □ S upports dual m ode operation. □ -50 to +50db gain control guaranteed. The A S 3802 is a gain controlled am plifier designed
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AS3802
IS-95
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Untitled
Abstract: No abstract text available
Text: MICRO PO WER S Y S T E M S INC blE D • b D tì7444 □ □ □ 4 b2 4 57G H f l P S -r-51-1 % MP7685 CMOS 11 -Bit, Low Power Analog-to-Digital Converter M icro Power System s FEATURES BENEFITS • Sampling Rate from 1 kHz to 1 MHz • Very Low Power CMOS -100 mW max
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-r-51-1Â
MP7685
MP7695
DB10-DB0
MP7685,
MP7685
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Untitled
Abstract: No abstract text available
Text: D ecem b er 1994 3 ^ Micro Linear ML4761 Adjustable Output Low Voltage Boost Regulator GENERAL DESCRIPTION FEATURES Th e M L4761 is a boost regulator designed for D C to D C co n versio n in 1 to 3 c e ll battery pow ered system s. The com b in atio n o f B iC M O S process technology, internal
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L4761
ML4761
ML4761CS
ML4761
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7205 REGULATOR
Abstract: sm 3316
Text: ML4861 PIN CONNECTION ML4861-6/-5/-3 8-Pin SOIC S08 1 8 — 1 v re f nz 2 7 1 GND f~ T ~ 3 6 ~ 4 5 _ l _ 1 V O U T v in Q D ETECT I I T~ 1 PW RGN D 1 R ESET n v L T O P V IE W PIN DESCRIPTION PIN NO. NAME 1 V|N 2 3 4 PIN NO. FUNCTION NAME FUNCTION Battery input voltage
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ML4861
ML4861-6/-5/-3
RAT365
7205 REGULATOR
sm 3316
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2N 5037
Abstract: N 4148 N4001 1n 4007 diode F948-ND
Text: September 1994 PRELIMINARY % M icro Linear ML4831 Electronic Ballast Controller GENERAL DESCRIPTION FEATURES The ML4831 is a complete solution for a dimmable, high power factor, high efficiency electronic ballast. Contained in the ML4831 are controllers for "boost" type power
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ML4831
c546-1
-41305-TC
SPE116A
F948-N
F058-N
ST-69
2N 5037
N 4148
N4001
1n 4007 diode
F948-ND
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Untitled
Abstract: No abstract text available
Text: ML4902 High Current Synchronous Buck Controller GENERAL DESCRIPTION FEATURES The ML4902 high current synchronous buck controller provides high efficiency DC/DC conversion to generate V c c p for processors such as the Pentium Pro and Pentium II from Intel®.
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ML4902
ML4902
10OmV
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