Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    86T02GH MOSFET Search Results

    86T02GH MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    86T02GH MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    86t02gh

    Abstract: 86t02
    Text: AP86T02GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D BVDSS 25V RDS ON Low On-resistance 6m ID Fast Switching Characteristic G 75A S Description G D S The TO-252 package is widely preferred for commercial-industrial


    Original
    PDF AP86T02GH/J O-252 AP86T02GJ) O-251 O-251 86T02GJ 86t02gh 86t02

    86T02GH

    Abstract: 86T02GH mosfet 86t02 ap86t02gh AP86T02 86t0 ap86t02gj dc-dc 30a GS Logo, Marking 30A
    Text: AP86T02GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Low On-resistance BVDSS 25V RDS ON 6mΩ ID ▼ Fast Switching Characteristic G 75A S Description G The TO-252 package is widely preferred for commercial-industrial


    Original
    PDF AP86T02GH/J O-252 AP86T02GJ) O-251 O-251 86T02GJ 86T02GH 86T02GH mosfet 86t02 ap86t02gh AP86T02 86t0 ap86t02gj dc-dc 30a GS Logo, Marking 30A

    Untitled

    Abstract: No abstract text available
    Text: AP86T02GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D BVDSS 25V RDS ON Low On-resistance ID Fast Switching Characteristic G RoHS Compliant 6m 75A S Description G D S The TO-252 package is widely preferred for commercial-industrial


    Original
    PDF AP86T02GH/J-HF O-252 AP86T02GJ) O-251 Cur60 O-251 86T02GJ

    86T02GH

    Abstract: 86T02GH mosfet 86t02 AP86T02GH 86t0 AP86T02 marking 86t02gh 86T02GJ
    Text: AP86T02GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Low On-resistance 25V RDS ON 6mΩ ID ▼ Fast Switching Characteristic G ▼ RoHS Compliant BVDSS 75A S Description


    Original
    PDF AP86T02GH/J-HF O-252 AP86T02GJ) O-251 O-251 86T02GJ 86T02GH 86T02GH mosfet 86t02 AP86T02GH 86t0 AP86T02 marking 86t02gh