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    85GHZ Price and Stock

    Molex 2119640001

    Antennas 2.4GHz/5GHz Ceramic Loop SMT Antenna
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 2119640001 Reel 12,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.204
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    Molex 2128600011

    Antennas WiFi DUAL-BAND ANTENNA HINGED BLK F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 2128600011 Each 1,310 10
    • 1 -
    • 10 $5.02
    • 100 $4.55
    • 1000 $4.21
    • 10000 $4.21
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    Kyocera AVX Components 9001815F0-AA10L0200

    Antennas 5G/4G FPC Ground Ind ependent 200mm Cable
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 9001815F0-AA10L0200 Each 1,000 5
    • 1 -
    • 10 $2.98
    • 100 $2.86
    • 1000 $2.75
    • 10000 $2.75
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    Kyocera AVX Components W3P35X8W04-H100D3B0A

    Antennas WiFi 6E & 7 PCB 100m m Cable MHF4L Connec
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI W3P35X8W04-H100D3B0A Each 1,000 5
    • 1 -
    • 10 $2.05
    • 100 $1.73
    • 1000 $1.73
    • 10000 $1.65
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    Abracon Corporation AFG4507W2S-0200S

    Antennas 2.4/5GHZ WIFI FLEX ANT IPEX-1(F)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI AFG4507W2S-0200S Each 1,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.07
    • 10000 $0.96
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    Find more 85GHZ price and stock on Findchips.com

    85GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Traveling Wave Amplifier

    Abstract: 95GH Dielectric Constant Silicon Nitride MMIC POWER AMPLIFIER hemt APMC2001 FMM5820X HMC-AUH312 TGA4803 TGA4906 InGaAs hemt biasing
    Text: DC to 85GHz TWA and Ka-band 4.9W Power Amplifier Using an Optical Lithography Based Low Cost PHEMT Process Kohei Fujii, John Stanback, and Henrik Morkner White Paper Abstract Overview of The Mmic Process An optical photo lithography based 0.15 m GaAs PHEMT


    Original     		PDF 85GHz 575mA/mm, 753mW/mm 18GHz. 12dBm AV02-1684EN Traveling Wave Amplifier 95GH Dielectric Constant Silicon Nitride MMIC POWER AMPLIFIER hemt APMC2001 FMM5820X HMC-AUH312 TGA4803 TGA4906 InGaAs hemt biasing

    pseudomorphic HEMT

    Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564
    Text: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm


    Original     		PDF FPD6836SOT343 FPD6836SOT3 OT343 FPD6836SOT343 mx750 1850MHz) 18dBm 2002/95/EC) FPD6836SOT343E FPD6836SOT343E-AG pseudomorphic HEMT TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564

    HMC394LP4

    Abstract: 10k 8 pin sip resister 5-bit counter variable power divider at 15 ghz 10k sip resister
    Text: HMC394LP4 v00.0501 MICROWAVE CORPORATION GaAs HBT PROGRAMMABLE 5-BIT COUNTER, DC - 2.2 GHz 3 Typical Applications Features Programmable divider for offsett synthesizer and variable divide by N applications: SSB Phase Noise: -153 dBc/Hz @ 100 kHz Parallel 5-Bit Control


    Original     		PDF HMC394LP4 HMC394LP4 10k 8 pin sip resister 5-bit counter variable power divider at 15 ghz 10k sip resister

    spa1526

    Abstract: No abstract text available
    Text: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs


    Original     		PDF SPA1526Z SOF-26 SPA1526Z SPA1526ZSQ SPA1526ZSR 850MHz spa1526

    Untitled

    Abstract: No abstract text available
    Text: HMC394LP4 v01.0701 MICROWAVE CORPORATION GaAs HBT PROGRAMMABLE 5-BIT COUNTER, DC - 2.2 GHz 3 Typical Applications Features Programmable divider for offset synthesizer and variable divide by N applications: SSB Phase Noise: -153 dBc/Hz @ 100 kHz Selectable Division from 2 to 32


    Original     		PDF HMC394LP4 HMC394LP4

    transistor bc 564

    Abstract: bc 5578 0604HQ FPD6836SOT343 OT343 re 0603size bc 548 transistor S22m transistor BC 548 Data transistor Bc 540
    Text: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive


    Original     		PDF FPD6836SOT343 FPD6836SOT3 OT343 1850MHz) 2002/95/EC) 18dBm FPD6836SOT343 mx750 FPD6836SOT343E EB6836SOT343CE-BA transistor bc 564 bc 5578 0604HQ OT343 re 0603size bc 548 transistor S22m transistor BC 548 Data transistor Bc 540

    AV02-0626EN

    Abstract: Avago Mounted Amplifiers ka-band bare ka band gaas fet Package Ka-band 1A12 30SPA0536 8A10 2.4ghz 4w 32A16
    Text: Ka-band 2W/4W MMIC Power Amplifiers in 7x7mm Low-cost SMT Package By Kohei Fujii and Henrik Morkner White Paper Abstract Power Amplifier Design The development of PHEMT, 24 to 31GHz 2W/4W power amplifier MMICs are described. The amplifier was designed with highly integrated distributed line-based


    Original     		PDF 31GHz 33dBm 35dBm AV02-0626EN Avago Mounted Amplifiers ka-band bare ka band gaas fet Package Ka-band 1A12 30SPA0536 8A10 2.4ghz 4w 32A16

    Transistor BC 457

    Abstract: bc 457 Transistor MCH185A101JK MCH185CN104KK SOF-26 TAJA105K020R MCH185A100JK
    Text: SPA-1526Z SPA-1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA-1526Z is made with InGaP-on-GaAs


    Original     		PDF SPA-1526Z SOF-26 SPA-1526Z SOF-26 SPA-1526Z-EVB1 SPA-1526Z-EVB2 SPA-1526Z-EVB3 Transistor BC 457 bc 457 Transistor MCH185A101JK MCH185CN104KK TAJA105K020R MCH185A100JK

    MCH185A100JK

    Abstract: transistor Bc 540 pin transistor Bc 540
    Text: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs


    Original     		PDF SPA1526Z SPA1526Z SOF-26 SOF-26 Matchi9421 SPA1526ZSQ MCH185A100JK transistor Bc 540 pin transistor Bc 540

    Untitled

    Abstract: No abstract text available
    Text: HMC394LP4 v04.1102 MICROWAVE CORPORATION GaAs HBT PROGRAMMABLE 5-BIT COUNTER, DC - 2.2 GHz FREQ. DIVIDER & DETECTORS - SMT 10 Typical Applications Features Programmable divider for offset synthesizer and variable divide by N applications: SSB Phase Noise: -153 dBc/Hz @ 100 kHz


    Original     		PDF HMC394LP4 HMC394LP4

    HBT 01 - 05

    Abstract: 5-bit counter HMC394LP4
    Text: HMC394LP4 v02.1101 MICROWAVE CORPORATION GaAs HBT PROGRAMMABLE 5-BIT COUNTER, DC - 2.2 GHz 3 Typical Applications Features Programmable divider for offset synthesizer and variable divide by N applications: SSB Phase Noise: -153 dBc/Hz @ 100 kHz Selectable Division from 2 to 32


    Original     		PDF HMC394LP4 HMC394LP4 HBT 01 - 05 5-bit counter

    Transistor BC 457

    Abstract: MCH185A100JK MCH185A101JK MCH185CN104KK SOF-26 TAJA105K020R
    Text: SPA-1526Z Preliminary SPA-1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Product Package: SOF-26 Product Description Features RFMD’s SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar


    Original     		PDF SPA-1526Z SOF-26 SPA-1526Z SPA-1526Z-EVB1 850MHz 910MHz SPA-1526Z-EVB2 Transistor BC 457 MCH185A100JK MCH185A101JK MCH185CN104KK SOF-26 TAJA105K020R

    HBT 01 - 05

    Abstract: HMC394
    Text: HMC394LP4 v04.1102 MICROWAVE CORPORATION GaAs HBT PROGRAMMABLE 5-BIT COUNTER, DC - 2.2 GHz 10 Typical Applications Features Programmable divider for offset synthesizer and variable divide by N applications: SSB Phase Noise: -153 dBc/Hz @ 100 kHz Selectable Division from 2 to 32


    Original     		PDF HMC394LP4 HMC394LP4 outp43 HBT 01 - 05 HMC394

    FPD6836SOT343E

    Abstract: 0604HQ FPD6836SOT343ESB FPD6836SOT343ESQ 0603 footprint IPC im 1117 atc x7r transistor bc 540
    Text: FPD6836SOT343E FPD6836SOT3 43ELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive


    Original     		PDF FPD6836SOT343E FPD6836SOT3 43ELow-Noise OT343 1850MHz) 2002/95/EC) 18dBm FPD6836SOT343E mx750 0604HQ FPD6836SOT343ESB FPD6836SOT343ESQ 0603 footprint IPC im 1117 atc x7r transistor bc 540

    HBT 01 - 05

    Abstract: HMC394
    Text: HMC394LP4 v06.0604 GaAs HBT PROGRAMMABLE 5-BIT COUNTER, DC - 2.2 GHz FREQ. DIVIDER & DETECTORS - SMT 10 Typical Applications Features Programmable divider for offset synthesizer and variable divide by N applications: SSB Phase Noise: -153 dBc/Hz @ 100 kHz


    Original     		PDF HMC394LP4 HMC394LP4 HBT 01 - 05 HMC394

    5-bit counter

    Abstract: HBT 01 - 05 HMC394LP4 CMOS counter divider 10 100 1000 DIVIDE-BY-20
    Text: HMC394LP4 v04.1102 MICROWAVE CORPORATION GaAs HBT PROGRAMMABLE 5-BIT COUNTER, DC - 2.2 GHz FREQ. DIVIDER & DETECTORS - SMT 10 Typical Applications Features Programmable divider for offset synthesizer and variable divide by N applications: SSB Phase Noise: -153 dBc/Hz @ 100 kHz


    Original     		PDF HMC394LP4 HMC394LP4 5-bit counter HBT 01 - 05 CMOS counter divider 10 100 1000 DIVIDE-BY-20

    MCH185A100JK

    Abstract: 1000PPM
    Text: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs


    Original     		PDF SPA1526Z SPA1526Z SOF-26 SOF-26 SPA1526ZSQ SPA1526ZSR MCH185A100JK 1000PPM

    2SC1260

    Abstract: 2sc1255 2SC1150 2SC1278S 2SC1210 2SC1252 2SC1265 2SC1268 2sc1162 2SC1269
    Text: - 102 - M X Ë f ê m £ £ Ta=25?C, *Ep[áTc=25'£ Pc ’C tu m Pc* (V) *± a 2SC1162 H i 2SC1164 2SC1165 2SC1ÎÔ9 MS (A) (V) (W) HS SW 60 50 1 0.8 (W) ( U A) œ tt (Ta=25'C) (max) 0.5 40 25 150 20 35 60 320 0.3 20 25 90 Vc e (V) Íc / I e (A) 1 (V) 0.6


    OCR Scan     		PDF Ta-25 2SC1150 2SC116Z 2SC1164 2SC1165 2SC11Ã ZSC1173 2SC1199 2SC1212 50ohm 2SC1260 2sc1255 2SC1278S 2SC1210 2SC1252 2SC1265 2SC1268 2sc1162 2SC1269

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEM ICO ND UC TO R <GaAs MMIC> MGF7169C Technical Note UHF BAND GaAs POW ER AM PLIFIER Specifications are subject to ch an g e w ithout notice. DESCRIPTION PIN CONFIGURATION TOP VIEW T h e M G F 7 1 6 9 C is a monolithic m icrow ave integrated


    OCR Scan     		PDF MGF7169C 600um MGF7169C GF7169C