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    80N08 Search Results

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    80N08 Price and Stock

    Micro Commercial Components MCAC80N08Y-TP

    MOSFET N-CH 80 80A DFN5060
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MCAC80N08Y-TP Digi-Reel 1,625 1
    • 1 $2
    • 10 $1.276
    • 100 $2
    • 1000 $0.62746
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    MCAC80N08Y-TP Cut Tape 1,625 1
    • 1 $2
    • 10 $1.276
    • 100 $2
    • 1000 $0.62746
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    Infineon Technologies AG IAUA180N08S5N026AUMA1

    MOSFET_(75V 120V( PG-HSOF-5
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    DigiKey IAUA180N08S5N026AUMA1 Digi-Reel 1,490 1
    • 1 $3.55
    • 10 $2.322
    • 100 $3.55
    • 1000 $1.22949
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    IAUA180N08S5N026AUMA1 Cut Tape 1,490 1
    • 1 $3.55
    • 10 $2.322
    • 100 $3.55
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    Mouser Electronics IAUA180N08S5N026AUMA1 3,326
    • 1 $3.17
    • 10 $2.16
    • 100 $1.54
    • 1000 $1.23
    • 10000 $1.2
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    Rochester Electronics IAUA180N08S5N026AUMA1 15,175 1
    • 1 $1.33
    • 10 $1.33
    • 100 $1.25
    • 1000 $1.13
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    EBV Elektronik IAUA180N08S5N026AUMA1 27 Weeks 2,000
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    Richtek Technology Corp RT9080N-08GJ5

    IC REG LIN 0.8V 600MA TSOT23-5
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    DigiKey RT9080N-08GJ5 Cut Tape 992 1
    • 1 $0.58
    • 10 $0.355
    • 100 $0.2265
    • 1000 $0.15464
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    RT9080N-08GJ5 Digi-Reel 992 1
    • 1 $0.58
    • 10 $0.355
    • 100 $0.2265
    • 1000 $0.15464
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    Mouser Electronics RT9080N-08GJ5 5,236
    • 1 $0.49
    • 10 $0.295
    • 100 $0.172
    • 1000 $0.142
    • 10000 $0.103
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    Newark RT9080N-08GJ5 Cut Tape 5
    • 1 $0.603
    • 10 $0.369
    • 100 $0.235
    • 1000 $0.16
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    Infineon Technologies AG IPB80N08S207ATMA1

    MOSFET N-CH 75V 80A TO263-3
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    DigiKey IPB80N08S207ATMA1 Cut Tape 409 1
    • 1 $5.57
    • 10 $3.725
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    • 1000 $2.23008
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    IPB80N08S207ATMA1 Digi-Reel 409 1
    • 1 $5.57
    • 10 $3.725
    • 100 $5.57
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    Newark IPB80N08S207ATMA1 Cut Tape 1
    • 1 $5.83
    • 10 $3.9
    • 100 $2.8
    • 1000 $2.33
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    Rochester Electronics IPB80N08S207ATMA1 694 1
    • 1 $2.45
    • 10 $2.45
    • 100 $2.3
    • 1000 $2.08
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    Chip1Stop IPB80N08S207ATMA1 Cut Tape 1,000
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    • 10 $3.57
    • 100 $2.56
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    EBV Elektronik IPB80N08S207ATMA1 13 Weeks 1,000
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    Infineon Technologies AG IPB80N08S2L07ATMA1

    MOSFET N-CH 75V 80A TO263-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPB80N08S2L07ATMA1 Cut Tape 265 1
    • 1 $5.73
    • 10 $3.83
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    IPB80N08S2L07ATMA1 Digi-Reel 265 1
    • 1 $5.73
    • 10 $3.83
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    Rochester Electronics IPB80N08S2L07ATMA1 366 1
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    Chip1Stop IPB80N08S2L07ATMA1 Cut Tape 695
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    Find more 80N08 price and stock on Findchips.com

    80N08 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    80N085

    Abstract: No abstract text available
    Text: HiPerFETTM MOSFET IXFC 80N085 VDSS = 85 V ID25 = 80 A Ω RDS on = 11 mΩ ISOPLUS220TM Electrically Isolated Back Surface trr ≤ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 80N085 ISOPLUS220TM 405B2 80N085

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 80N085 VDSS IXFT 80N085 ID25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt = 85 V = 80 A = 9 mW trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 85 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 80N085 O-247 O-268 O-268

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM MOSFET IXFC 80N085 VDSS = 85 V ID25 = 80 A Ω RDS on = 11 mΩ ISOPLUS220TM Electrically Isolated Back Surface trr ≤ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 80N085 ISOPLUS220TM 405B2

    80N08

    Abstract: n-channel, 75v, 80a 80N08L-TA3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD 80N08 Preliminary Power MOSFET N-CHANNEL 80V D-S MOSFET „ DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC trench technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch


    Original     		PDF 80N08 80N08 80N08L-TA3-R 80N08G-TA3-R O-220 QW-R502-468 n-channel, 75v, 80a 80N08L-TA3-R

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 80N085 VDSS IXFT 80N085 ID25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt = 85 V = 80 A = 9 mW trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 85 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 80N085 O-268 O-268

    80N085

    Abstract: IXFH80N085 80N08
    Text: HiPerFETTM Power MOSFETs IXFH 80N085 IXFT 80N085 VDSS = 85 V = 80 A ID25 RDS on = 9 mW N-Channel Enhancement Mode Avalanche Rated, High dv/dt trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 85 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 80N085 O-247 80N085 IXFH80N085 80N08

    80N08G

    Abstract: MOSFET 20V 80A 80n08
    Text: UNISONIC TECHNOLOGIES CO., LTD 80N08 Preliminary Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply secondary synchronous rectification , industrial and primary switch


    Original     		PDF 80N08 80N08 O-247 O-220 80N08L-T47-T 80N08G-T47-T 80N08L-TA3-T 80N08G-TA3-T QW-R502-468 80N08G MOSFET 20V 80A

    80N08

    Abstract: 80N085 4800 mosfet
    Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET VDSS ISOPLUS220TM Electrically Isolated Back Surface IXFC 80N08 IXFC 80N085 ID25 80 V 85 V RDS on 80 A 11 mΩ Ω Ω 80 A 11 mΩ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions


    Original     		PDF ISOPLUS220TM 80N08 80N085 728B1 123B1 728B1 065B1 80N08 80N085 4800 mosfet

    kf80n08

    Abstract: 80N08 fet. kf 80n08 KF80N08P TO-220AB marking 2008 TO220AB FET MARKING
    Text: SEMICONDUCTOR 80N08P MARKING SPECIFICATION TO-220AB PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 80N08 2 P Item 801 3 Marking Description KF KEC Fresh FET 80N08 80N08 Package & Version P TO-220AB Lot No. 801 Device Name 2008. 6. 16 Revision No : 0


    Original     		PDF KF80N08P O-220AB KF80N08 80N08 O-220AB kf80n08 80N08 fet. kf 80n08 KF80N08P TO-220AB marking 2008 TO220AB FET MARKING

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 80N08 Preliminary Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply secondary synchronous rectification , industrial and primary switch


    Original     		PDF 80N08 80N08 O-220 O-220 80N08L-TA3-T 80N08G-TA3-T QW-R502-468

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 80N085 IXFT 80N085 VDSS = 85 V ID25 = 80 A RDS on = 9 mW N-Channel Enhancement Mode Avalanche Rated, High dv/dt trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 85 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 80N085 80N085 O-247 O-268 O-268AA

    80N08

    Abstract: 80N085
    Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET VDSS ISOPLUS220TM Electrically Isolated Back Surface IXFC 80N08 IXFC 80N085 ID25 80 V 85 V RDS on 80 A 9 mΩ Ω Ω 80 A 9 mΩ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions


    Original     		PDF ISOPLUS220TM 80N08 80N085 728B1 123B1 728B1 065B1 80N08 80N085

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 80N08 Preliminary Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply secondary synchronous rectification , industrial


    Original     		PDF 80N08 80N08 80N08L-T47-T 80N08G-T47-T 80N08L-TA3-T 80N08G-TA3-T 80N08L-TQ2-T 80N08G-TQ2-T 80N08L-TQ2-R 80N08G-TQ2-R

    80N08

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 80N08 Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply secondary synchronous rectification , industrial


    Original     		PDF 80N08 80N08 80N08L-T47-T 80N08G-T47-T 80N08L-TA3-T 80N08G-TA3-T 80N08L-TQ2-T 80N08G-TQ2-T 80N08L-TQ2-R 80N08G-TQ2-R

    80N08

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 80N08 Preliminary Power MOSFET 80 Amps, 80 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply secondary synchronous rectification , industrial and primary switch


    Original     		PDF 80N08 80N08 O-220 80N08L-TA3-R 80N08G-TA3-R QW-R502-468

    80N08

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 80N08 VDSS IXFT 80N08 ID25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt = 80 V = 80 A Ω = 9 mΩ trr ≤ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 80N08 O-268 O-268

    80N08

    Abstract: 80N085
    Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET VDSS ISOPLUS220TM Electrically Isolated Back Surface IXFC 80N08 IXFC 80N085 ID25 RDS on 80 A 9 mΩ Ω Ω 80 A 9 mΩ 80 V 85 V N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions


    Original     		PDF ISOPLUS220TM 80N08 80N085 728B1 123B1 728B1 065B1 80N08 80N085

    80N085

    Abstract: 80N08 4800 mosfet mosfet 4800
    Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET VDSS ISOPLUS220TM Electrically Isolated Back Surface IXFC 80N08 IXFC 80N085 ID25 RDS on 80 A 9 mΩ Ω Ω 80 A 9 mΩ 80 V 85 V N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions


    Original     		PDF ISOPLUS220TM 80N08 80N085 220TM 80N085 80N08 4800 mosfet mosfet 4800

    power window motor 12v

    Abstract: 752r bus Door control circuit 6163D bts723 central lock door gasoline direct injection power window central locking 4268GS
    Text: Anfang 42V PowerNet PowerNet in in Door Door Application Application 42V SAE 2000 World Congress March 6-9, 2000, Detroit, Michigan, USA Alfons Graf - Infineon Technologies AG 42V PowerNet in Door Application Introduction 42V and the influence on semiconductors


    Original     		PDF 4V/42V power window motor 12v 752r bus Door control circuit 6163D bts723 central lock door gasoline direct injection power window central locking 4268GS

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    optimos battery protection reverse

    Abstract: 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package
    Text: 21/9/04 15.23 Página 2 Product Information 2004 INFINEON TECHNOLOGIES Automotive MOSFET Green and Robust Package I N O R D E R T O cope with the new RoHS Restricting the use of Hazardous Automotive MOSFET Substances and WEEE (Waste Electronic and Electrical Equipment) regulations the


    Original     		PDF FIN-02601 100P03P3L-04 P-TO220-3 P-TO262-3 P-TO252-3 P-TO263-3 O-263-7) P-TO263-7 P-TO220-7 optimos battery protection reverse 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package

    TLE7201

    Abstract: BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519
    Text: Automotive Power Selection Guide Ultimate POWER – Perfect Control CO M P L E T E A u t o m o t i v e S o l u t i o ns f r o m I n f i n e o n www.infineon.com/power Never stop thinking. Introduction Power and Control – a Successful Combination D O Y O U N E E D to control more power? With increasing accuracy? Do


    Original     		PDF B112-H6731-G12-X-7600 TLE7201 BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819