ac dc distribution boards diagram
Abstract: IC 8085 pin diagram IR LED infrared led AQY221N2S AQY221N2SX AQY221N2SZ
Text: RF Radio Frequency C (by) x R 10 Type FEATURES 4.3±0.2 .169±.008 1. In addition to lower output capacitance between terminals than ever before, the PhotoMOS relay achieves low ON-resistance. Output capacitance(C): 1.0pF (typ.) ON resistance(R): 9.5Ω (typ.)
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AQY221N2VY
Abstract: No abstract text available
Text: RF Radio Frequency C (by) ✕ R 10 SSOP Type 4.45 .175 1.80 .071 2.65 .104 mm inch 1 4 2 3 UL CSA pending pending PhotoMOS RELAYS FEATURES TYPICAL APPLICATIONS 1. Reduced package size Lower surface has been reduced 60% and mounting space 40% compared to
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Abstract: No abstract text available
Text: GU-E PhotoMOS AQW414EH TESTING General use and economy type. DIP (2 Form B) 8-pin type. Reinforced insulation 5,000V type. FEATURES 6.4 .252 9.86 .388 GU-E PhotoMOS (AQW414EH) 6.4 .252 9.86 .388 2.9 .114 mm inch 1 8 2 7 3 6 4 5 5. High sensitivity, high speed
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AQW414EH)
EN41003,
EN60950
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8085 transistor
Abstract: No abstract text available
Text: HS PhotoMOS AQV234 Highest sensitivity LED operate current: typical 0.31A FEATURES 1. High sensitivity type LED operate current: typical 0.31 mA 2. Low-level off state leakage current (Typical 1 µA at 400 V load voltage) 3. Eliminates the need for a power
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AQV234)
8085 transistor
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AQW414EH
Abstract: AQW414EHA AQW414EHAX AQW414EHAZ
Text: GU-E 2 Form B AQW414EH TESTING Normally closed DIP8-pin economic type with reinforced insulation GU-E 2 Form B (AQW414EH) AQW414EH 6.4 .252 9.86 .388 3.2 .126 6.4 .252 9.86 .388 2.9 .114 mm inch 1 8 2 7 3 6 4 5 FEATURES TYPICAL APPLICATIONS 1. Reinforced insulation of 5,000 V
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AQW414EH)
AQW414EH
EN41003,
EN60950
aqw414eh:
120411J
AQW414EH
AQW414EHA
AQW414EHAX
AQW414EHAZ
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Untitled
Abstract: No abstract text available
Text: GU-E PhotoMOS AQW414EH TESTING General use and economy type. DIP (2 Form B) 8-pin type. Reinforced insulation 5,000V type. GU-E PhotoMOS (AQW414EH) FEATURES 6.4 .252 9.86 .388 3.2 .126 6.4 .252 9.86 .388 2.9 .114 mm inch 1 8 2 7 3 6 4 5 control of low-level analog signals without
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AQW414EH)
EN41003,
EN60950
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AQW454
Abstract: No abstract text available
Text: High sensitivity and low on-resistance. DIP 2 Form B 8-pin type. HE PhotoMOS (AQW454) FEATURES 6.4 .252 9.78 .385 3.9 .154 6.4 .252 9.78 .385 3.6 .142 mm inch 1 8 2 7 3 6 4 5 1. Compact 8-pin DIP size The device comes in a compact (W) 6.4x(L) 9.78×(H) 3.9 mm (W) .252×(L)
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AQW454)
AQW454
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Untitled
Abstract: No abstract text available
Text: GU 1 Form B AQV414 Normally closed 6-pin type of 400V load voltage GU 1 Form B (AQV414) AQV414 FEATURES 8.8 .346 3.9 .154 6.4 .252 8.8 .346 3. High sensitivity and low onresistance Can control max. 0.15 A load current with 5 mA input current. 4. Low-level off state leakage current
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AQV414)
AQV414
aqv414:
010611J
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AQW254
Abstract: AQW254A AQW254AX AQW254AZ led schematic
Text: HE 2 Form A AQW254 DIP8-pin type featuring low on-resistance with 400V load voltage HE 2 Form A (AQW254) AQW254 6.4 .252 9.78 .385 3.9 .154 6.4 .252 9.78 .385 3.6 .142 Height includes standoff mm inch 1 8 2 7 3 6 4 5 FEATURES TYPICAL APPLICATIONS 1. High sensitivity and low onresistance
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AQW254)
AQW254
aqw254:
120411J
AQW254
AQW254A
AQW254AX
AQW254AZ
led schematic
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Abstract: No abstract text available
Text: AQY21❍EH TESTING PhotoMOS RELAYS GU General Use -E Type 1-Channel (Form A) 4-pin Type FEATURES 4.78 .188 6.4 .252 3.2±0.1 .126±.004 4.78 .188 6.4 .252 2.9 .114 mm inch 1 4 2 3 1. Reinforced insulation 5,000 V type More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced
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AQY21rEH
AQY210EH)
EN41003,
EN60950
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nais relay cross reference
Abstract: No abstract text available
Text: GU PhotoMOS AQV414 DIP (1 Form B) 6-pin type. Controls load voltage 400V. FEATURES 6.4 .252 8.8 .346 1. Low on resistance for normallyclosed type This has been realized thanks to the builtin MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method.
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AQV414)
nais relay cross reference
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Untitled
Abstract: No abstract text available
Text: GU PhotoMOS AQV414 DIP (1 Form B) 6-pin type. Controls load voltage 400V. FEATURES 6.4 .252 8.8 .346 1. Low on resistance for normallyclosed type This has been realized thanks to the builtin MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method.
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AQV414)
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AQW454
Abstract: No abstract text available
Text: High sensitivity and low on-resistance. DIP 2 Form B 8-pin type. HE PhotoMOS (AQW454) FEATURES 6.4 .252 9.78 .385 3.9 .154 6.4 .252 9.78 .385 3.6 .142 mm inch 1 8 2 7 3 6 4 5 1. Compact 8-pin DIP size The device comes in a compact (W) 6.4x(L) 9.78×(H) 3.9 mm (W) .252×(L)
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AQW454)
AQW454
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Untitled
Abstract: No abstract text available
Text: High sensitivity and low on-resistance. DIP 2 Form A 8-pin type. HE PhotoMOS (AQW254) FEATURES 6.4 .252 9.78 .385 3.9 .154 6.4 .252 9.78 .385 3.6 .142 mm inch 1 8 2 7 3 6 4 5 1. Compact 8-pin DIP size The device comes in a compact (W) 6.4x(L) 9.78×(H) 3.9 mm (W) .252×(L)
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AQW254)
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8085 transistor
Abstract: No abstract text available
Text: HS PhotoMOS AQV234 HS PhotoMOS (AQV234) Highest sensitivity LED operate current: typical 0.31A 6.4 .252 8.8 .346 3.9 .154 6.4 .252 8.8 .346 3.6 .142 mm inch 1 6 2 5 3 4 RoHS Directive compatibility information http://www.mew.co.jp/ac/e/environment/ FEATURES
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AQV234)
8085 transistor
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Untitled
Abstract: No abstract text available
Text: HE PhotoMOS AQW454 High sensitivity and low on-resistance. DIP (2 Form B) 8-pin type. HE PhotoMOS (AQW454) FEATURES 6.4 .252 9.78 .385 3.9 .154 6.4 .252 9.78 .385 3.6 .142 mm inch 1 8 2 7 3 6 4 5 RoHS Directive compatibility information http://www.mew.co.jp/ac/e/environment/
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AQW454)
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Untitled
Abstract: No abstract text available
Text: HE PhotoMOS AQW254 High sensitivity and low on-resistance. DIP (2 Form A) 8-pin type. FEATURES 6.4 .252 9.78 .385 HE PhotoMOS (AQW254) 3.9 .154 6.4 .252 9.78 .385 3.6 .142 mm inch 1 8 2 7 3 6 4 5 RoHS Directive compatibility information http://www.mew.co.jp/ac/e/environment/
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AQW254)
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Untitled
Abstract: No abstract text available
Text: GU PhotoMOS AQW414 Compact DIP(2 Form B) 8-pin type. Controls load voltage 400V. GU PhotoMOS (AQW414) FEATURES 9.78 .385 6.4 .252 1. Approx. 1/2 the space compared with the mounting of Two 1 Form B photo MOS units 3.9 .154 6.4 .252 9.78 .385 3.6 .142 Two 1 Form B units
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AQW414)
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Untitled
Abstract: No abstract text available
Text: GU PhotoMOS AQW414 Compact DIP(2 Form B) 8-pin type. Controls load voltage 400V. FEATURES 9.78 .385 1. Approx. 1/2 the space compared with the mounting of Two 1 Form B photo MOS units 6.4 .252 5. Controls load currents up to 0.13 A with an input current of 5 mA
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AQW414)
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8085 transistor
Abstract: matsua transistor 154
Text: HS PhotoMOS AQV234 Highest sensitivity LED operate current: typical 0.31A FEATURES 1. High sensitivity type LED operate current: typical 0.31 mA 2. Low-level off state leakage current (Typical 1 µA at 400 V load voltage) 3. Eliminates the need for a power
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AQV234)
8085 transistor
matsua transistor 154
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AQW454
Abstract: No abstract text available
Text: HE 2 Form B AQW454 Normally closed (2 Form A) DIP6-pin type Low on-resistance with 400V load voltage 6.4 .252 9.78 .385 3.9 .154 6.4 .252 9.78 .385 3.6 .142 Height includes standoff mm inch 1 8 2 7 3 6 4 5 RoHS compliant HE 2 Form B (AQW454) FEATURES TYPICAL APPLICATIONS
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AQW454)
ASCTB59E
201201-T
AQW454
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Untitled
Abstract: No abstract text available
Text: GU PhotoMOS AQV414 GU PhotoMOS (AQV414) DIP (1 Form B) 6-pin type. Controls load voltage 400V. FEATURES 6.4 .252 8.8 .346 1. Low on resistance for normallyclosed type This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method.
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AQV414)
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Untitled
Abstract: No abstract text available
Text: GU PhotoMOS AQW414 Compact DIP(2 Form B) 8-pin type. Controls load voltage 400V. GU PhotoMOS (AQW414) FEATURES 9.78 .385 6.4 .252 1. Approx. 1/2 the space compared with the mounting of Two 1 Form B photo MOS units 3.9 .154 6.4 .252 9.78 .385 3.6 .142 Two 1 Form B units
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AQW414)
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Untitled
Abstract: No abstract text available
Text: GU PhotoMOS AQW414 Compact DIP(2 Form B) 8-pin type. Controls load voltage 400V. FEATURES 9.78 .385 1. Approx. 1/2 the space compared with the mounting of Two 1 Form B photo MOS units 6.4 .252 5. Controls load currents up to 0.13 A with an input current of 5 mA
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AQW414)
force00
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