AC INRUSH CURRENT 1000A LIMITER
Abstract: KLH Series littelfuse l50s L15S L25S L50S L60S L70S LR29862 UL 248-14
Text: Next Semiconductor Fuses 150/250/500/600/700 VAC • Very Fast-Acting ■ 1 – 1000 Amperes SPECIFICATIONS Voltage Ratings: L15S: 150 V AC/DC 1 – 60A 150 VAC (70 – 1000A) 100 VDC (70 – 1000A) L25S: 250 V AC/DC (1 – 200A) 250 VAC (225 – 800A) 200 VDC (225 – 800A)
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VAC/450VDC
700VAC/650VDC
E71611
LR29862
001/LHR
AC INRUSH CURRENT 1000A LIMITER
KLH Series
littelfuse l50s
L15S
L25S
L50S
L60S
L70S
LR29862
UL 248-14
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littelfuse l50s
Abstract: l13s L15S L25S L50S L60S L70S LR29862 KlA 511 L25S125
Text: Semiconductor Fuses 150/250/500/600/700 VAC • Very Fast-Acting ■ 1 – 1000 Amperes SPECIFICATIONS Voltage Ratings: L15S: 150 V AC/DC 1 – 60A 150 VAC (70 – 1000A) 100 VDC (70 – 1000A) L25S: 250 V AC/DC (1 – 200A) 250 VAC (225 – 800A) 200 VDC (225 – 800A)
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VAC/450VDC
700VAC/650VDC
E71611
LR29862
littelfuse l50s
l13s
L15S
L25S
L50S
L60S
L70S
LR29862
KlA 511
L25S125
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L15S
Abstract: L25S L50S L60S L70S l13s L15S1000
Text: Semiconductor Fuses 150/250/500/600/700 VAC • Very Fast-Acting ■ 1 – 1000 Amperes SPECIFICATIONS Voltage Ratings: L15S: 150 V AC/DC 1 – 60A 150 VAC (70 – 1000A) 100 VDC (70 – 1000A) L25S: 250 V AC/DC (1 – 200A) 250 VAC (225 – 800A) 200 VDC (225 – 800A)
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VAC/450VDC
700VAC/650VDC
E71611)
LR29862-99)
L15S
L25S
L50S
L60S
L70S
l13s
L15S1000
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transistor VCE 1000V
Abstract: E80276 QM800HA-2HB
Text: MITSUBISHI TRANSISTOR MODULES QM800HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM800HA-2HB • • • • • IC Collector current . 800A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750
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QM800HA-2HB
E80276
E80271
47MAX.
transistor VCE 1000V
E80276
QM800HA-2HB
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DIODE 24B
Abstract: E80276 QM800HA-24B
Text: MITSUBISHI TRANSISTOR MODULES QM800HA-24B HIGH POWER SWITCHING USE INSULATED TYPE QM800HA-24B • • • • • IC Collector current . 800A VCEX Collector-emitter voltage . 1200V hFE DC current gain. 750
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QM800HA-24B
E80276
E80271
47MAX.
DIODE 24B
E80276
QM800HA-24B
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phmb800b12
Abstract: No abstract text available
Text: IGBT MODULE PHMB800B12 Single 800A 1200V CIRCUIT OUTLINE DRAWING Dimension mm Approximate Weight : 650g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range
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PHMB800B12
fig11-Tansient
phmb800b12
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PHMB800A6
Abstract: No abstract text available
Text: IGBT MODULE PHMB800A6 Single 800A 600V CIRCUIT OUTLINE DRAWING Dimension mm Approximate Weight : 650g MAXMUM RATINGS (Tc=25°C) Item Symbol Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range
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PHMB800A6
PHMB800A6
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Untitled
Abstract: No abstract text available
Text: 70-W424NIA800SH-M800F target datasheet 2xflow NPC 4w 2400V/800A Features 2xflow SCREW 4w 12mm housing ● 2400V NPC-topology ● Low inductive ● High power screw interface ● Integrated DC-snubber capacitors ● assymetrical inductance technology Target Applications
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70-W424NIA800SH-M800F
400V/800A
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thyristor 800A
Abstract: wenzhou MTC600
Text: Thyristor/Thyristor Module MTC600A/800A Thyristor/Diode Module MFC600A/800A FEATURES • High voltage • Industrial standard package • Low thermal resistance • Designed and qualified for industrial level • Excellent thermal performances obtained by the usage of
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MTC600A/800A
MFC600A/800A
thyristor 800A
wenzhou
MTC600
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IGBT module FZ 1200
Abstract: KF6C FZ800R17KF6CB2
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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FZ800R17KF6CB2
IGBT module FZ 1200
KF6C
FZ800R17KF6CB2
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eupec igbt
Abstract: IGBT FZ 1800 FZ800R17KF6CB2 IGBT module FZ 1200 IGBT FZ 800
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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semikron skiip 33
Abstract: No abstract text available
Text: SKiiP 802 GH 061 - 2*259 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM
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IGBT11)
semikron skiip 33
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semikron skiip 400 gb
Abstract: SKiiP 802 GB 061 POWER SUPPLY WITH IGBT semikron skiip 20
Text: SKiiP 802 GB 061 - 259 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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IGBT11)
Rthjs10)
semikron skiip 400 gb
SKiiP 802 GB 061
POWER SUPPLY WITH IGBT
semikron skiip 20
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diode 1700v
Abstract: FZ800R17KF6CB2
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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FZ800R17KF6CB2
Abstract: KF6C
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values
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SKiiP 802 GB 061
Abstract: No abstract text available
Text: SKiiP 802 GB 061 - 259 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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IGBT11)
Rthjs10)
SKiiP 802 GB 061
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MBN800E33D
Abstract: No abstract text available
Text: Spec.No.IGBT-SP-03012 R1 IGBT MODULE MBN800E33D PRELIMINARY SPEC. Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.
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IGBT-SP-03012
MBN800E33D
000cycles)
MBN800E33D
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ic 555N
Abstract: MBL800D33B 555N hitachi igbt
Text: IGBT MODULE MBL800D33B TENTATIVE SPECIFICATION Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES * High thermal fatigue durability. delta Tc=70°C,N>20,000cycles * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD).
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MBL800D33B
000cycles)
ic 555N
MBL800D33B
555N
hitachi igbt
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semikron skiip 33
Abstract: No abstract text available
Text: SKiiP 802 GH 061 - 2*259 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM
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IGBT11)
Rthjs10)
semikron skiip 33
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM800HA-24B HIGH POWER SWITCHING USE INSULATED TYPE QM800HA-24B lc Collector current. 800A Vcex Collector-emitter vo ltag e 1200V hFE DC current gain.750 Insulated Type UL Recognized
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QM800HA-24B
E80276
E80271
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM800HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM800HA-2HB lc Collector current. 800A Vcex Collector-emitter vo ltag e 1000V hFE DC current gain.750 Insulated Type UL Recognized
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OCR Scan
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PDF
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QM800HA-2HB
E80276
E80271
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Mitsubishi transistor
Abstract: No abstract text available
Text: MITSUBISHI TRANSÌSTOR MODULES ! QM800HA-2HB ! HIGH POWER SWITCHING USE INSULATED TYPE ! QM800HA-2HB • lc Collector cu rre n t. 800A • V cex Collector-em itter • hFE DC current g am . 750 . v o lta g e 1000V
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QM800HA-2HB
E80276
E80271
Mitsubishi transistor
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DIODE 24B
Abstract: DIODE S2v DIODE in s2v Mitsubishi transistor circuit diagram for je 182 g
Text: MITSUBISHI TRANSISTOR MODULES QM800HA-24B j HIGH POWER SWITCHING USE [ INSULATED TYPE | QM800HA-24B • • • • • Ic Collector c u rre n t. 800A V cex Collector-em itter v o lta g e 1200V hFE DC current g a in . 750
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QM800HA-24B
QM800HA-24B
E80276
E80271
DIODE 24B
DIODE S2v
DIODE in s2v
Mitsubishi transistor
circuit diagram for je 182 g
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PLESSEY CLA
Abstract: No abstract text available
Text: GEC PLESSEY S i S E M I C O N D U C T O R S DS4338-4.2 GP800DHB12S POWERLINE N-CHANNELIGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V ^CES 2.8V 800A l«COMT 1600A ^C PK) 190ns tr 840ns • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers.
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DS4338-4
GP800DHB12S
190ns
840ns
44lbs
70lbs
88lbs
18lbs
1500g
PLESSEY CLA
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