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    800- 2000MHZ AMPLIFIER IC Search Results

    800- 2000MHZ AMPLIFIER IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation

    800- 2000MHZ AMPLIFIER IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic 1496 specifications

    Abstract: 2SC4855 ITR07603 ITR07604 ITR07605 ITR07606 ITR07607 CE1M KT 1117
    Text: Ordering number:ENN4759 NPN Epitaxial Planar Silicon Transistor 2SC4855 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : ⏐S21e⏐2=7.5dB typ


    Original     		PDF ENN4759 2SC4855 S21e2 2SC4855] ic 1496 specifications 2SC4855 ITR07603 ITR07604 ITR07605 ITR07606 ITR07607 CE1M KT 1117

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN4759 NPN Epitaxial Planar Silicon Transistor 2SC4855 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7.5dB typ


    Original     		PDF ENN4759 2SC4855 S21e2 2SC4855]

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN4578A NPN Epitaxial Planar Silicon Transistor 2SC4853 Low-Voltage, Low-Current High-Frequency Amplifier Applications Package Dimensions unit:mm 2059B [2SC4853] 0.425 • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7dB typ (f=1GHz).


    Original     		PDF ENN4578A 2SC4853 2059B 2SC4853]

    KT 819 transistor

    Abstract: TRANSISTOR KT 838
    Text: Ordering number:ENN4579 NPN Epitaxial Planar Silicon Transistor 2SC4854 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7dB typ (f=1GHz).


    Original     		PDF ENN4579 2SC4854 S21e2 2018B 2SC4854] KT 819 transistor TRANSISTOR KT 838

    MARKING CN

    Abstract: ic 4578 2SC4853 ITR07581 ITR07582 ITR07583 ITR07584 j200 transistor
    Text: Ordering number:ENN4578A NPN Epitaxial Planar Silicon Transistor 2SC4853 Low-Voltage, Low-Current High-Frequency Amplifier Applications Package Dimensions unit:mm 2059B [2SC4853] 0.425 • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : ⏐S21e⏐2=7dB typ (f=1GHz).


    Original     		PDF ENN4578A 2SC4853 2059B 2SC4853] S21e2 MARKING CN ic 4578 2SC4853 ITR07581 ITR07582 ITR07583 ITR07584 j200 transistor

    CE1M

    Abstract: TRANSISTOR KT 838 KT 819 transistor 2SC4854 ITR07592 ITR07593 ITR07594 ITR07595 AX-9521
    Text: Ordering number:ENN4579 NPN Epitaxial Planar Silicon Transistor 2SC4854 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : ⏐S21e⏐2=7dB typ (f=1GHz).


    Original     		PDF ENN4579 2SC4854 S21e2 2018B 2SC4854] CE1M TRANSISTOR KT 838 KT 819 transistor 2SC4854 ITR07592 ITR07593 ITR07594 ITR07595 AX-9521

    A1076

    Abstract: ITR07582 ITR07583 ITR07585
    Text: 2SC4853A Ordering number : ENA1076 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4853A Low-Voltage, Low-Current High-Frequency Amplifier Applications Features • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA :⏐S21e⏐2=7dB typ (f=1GHz).


    Original     		PDF 2SC4853A ENA1076 S21e2 A1076-5/5 A1076 ITR07582 ITR07583 ITR07585

    Untitled

    Abstract: No abstract text available
    Text: 2SC4853A Ordering number : ENA1076A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4853A Low-Voltage, Low-Current High-Frequency Amplifier Applications Features • Low-voltage, low-current operation : fT=5GHz typ VCE=1V, IC=1mA : ⏐S21e⏐2=7dB typ (f=1GHz)


    Original     		PDF 2SC4853A ENA1076A A1076-8/8

    Untitled

    Abstract: No abstract text available
    Text: HMC-C013 10W PA Module, 800 - 2000 MHz The HMC-C013 is a 10 Watt Power Amplifier Module suitable for Cellular/3G repeaters, wireless data, laboratory use and ATE applications. The unit includes DC power sequencing, enable and conditioning for load mismatch protection. Thermal protection/fault circuitry


    Original     		PDF HMC-C013 HMC-C013 CDMA2000 800MHz 1000MHz 1900MHz 2000MHz

    j200 transistor

    Abstract: 2SC4853 FH104 of transistor C 4908 800- 2000mhz amplifier ic
    Text: Ordering number:ENN6218 NPN Epitaxial Planar Silicon Composite Transistor FH104 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2149 [FH104] 0.25 6 5 4 E2 1 2 0.65 2.0 C1 TR2 E1 3 1 : Collector1 2 : Emitter1


    Original     		PDF ENN6218 FH104 FH104] FH104 2SC4853 j200 transistor of transistor C 4908 800- 2000mhz amplifier ic

    j200 transistor

    Abstract: 2SC4853 FH104 of transistor C 4908 62183 transistor c 3228 MARKING e1v
    Text: Ordering number:ENN6218 NPN Epitaxial Planar Silicon Composite Transistor FH104 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2149 [FH104] 0.25 6 5 4 E2 1 2 0.65 2.0 C1 TR2 E1 3 1 : Collector1 2 : Emitter1


    Original     		PDF ENN6218 FH104 FH104] FH104 2SC4853 j200 transistor of transistor C 4908 62183 transistor c 3228 MARKING e1v

    j200 transistor

    Abstract: it00307 j200 ON Semiconductor TA-1706 A 933 S transistors 2SC4867 FH103 N0199TS ic 741 equivalent IT00303
    Text: Ordering number:ENN6217 NPN Epitaxial Planar Silicon Composite Transistor FH103 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2149 [FH103] 0.25 6 5 4 E2 1 2 0.65 2.0 C1 3 Tr2 E1 1 : Collector1 2 : Emitter1


    Original     		PDF ENN6217 FH103 FH103] FH103 2SC4867, j200 transistor it00307 j200 ON Semiconductor TA-1706 A 933 S transistors 2SC4867 N0199TS ic 741 equivalent IT00303

    TA-1706

    Abstract: 2SC4867 FH103 TA1706
    Text: Ordering number:ENN6217 NPN Epitaxial Planar Silicon Composite Transistor FH103 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2149 [FH103] 0.25 6 5 4 E2 1 2 0.65 2.0 C1 3 Tr2 E1 1 : Collector1 2 : Emitter1


    Original     		PDF ENN6217 FH103 FH103] FH103 2SC4867, TA-1706 2SC4867 TA1706

    transistor 8026

    Abstract: 2SC5245 FH105
    Text: Ordering number:ENN6219 NPN Epitaxial Planar Silicon Composite Transistor FH105 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2160 [FH105] 0.25 6 5 4 E2 1 2 0.65 2.0 Tr2 C1 B2 1 : Collector1 2 : Base2 3 : Collector2


    Original     		PDF ENN6219 FH105 FH105] FH105 2SC5245, transistor 8026 2SC5245

    FH102A

    Abstract: 2SC5226A ITR10753 ITR10754 ITR10755 ITR10756 ZO 607 transistor
    Text: FH102A Ordering number : ENA1125 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH102A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency


    Original     		PDF FH102A ENA1125 FH102A 2SC5226A, A1125-6/6 2SC5226A ITR10753 ITR10754 ITR10755 ITR10756 ZO 607 transistor

    Untitled

    Abstract: No abstract text available
    Text: FH102A Ordering number : ENA1125 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH102A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency


    Original     		PDF ENA1125 FH102A FH102A 2SC5226A, A1125-6/6

    Untitled

    Abstract: No abstract text available
    Text: FH102A Ordering number : ENA1125 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH102A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency


    Original     		PDF FH102A ENA1125 FH102A 2SC5226A, A1125-6/6

    FH105A

    Abstract: AMPLIFIER SANYO DC 303 SANYO DC 303 2SC5245A j200 ON Semiconductor
    Text: FH105A Ordering number : ENA1126 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH105A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency


    Original     		PDF FH105A ENA1126 FH105A 2SC5245A, A1126-6/6 AMPLIFIER SANYO DC 303 SANYO DC 303 2SC5245A j200 ON Semiconductor

    SC 708-4

    Abstract: MCP6 Marking sanyo
    Text: FH102A Ordering number : ENA1125A SANYO Semiconductors DATA SHEET FH102A NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting


    Original     		PDF ENA1125A FH102A FH102A 2SC5226A, A1125-8/8 SC 708-4 MCP6 Marking sanyo

    Untitled

    Abstract: No abstract text available
    Text: FH102A Ordering number : ENA1125A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH102A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting


    Original     		PDF FH102A ENA1125A FH102A 2SC5226A, A1125-8/8

    Untitled

    Abstract: No abstract text available
    Text: RF2480  ',5 &7 48$'5$785( 02'8/$725 7\SLFDO $SSOLFDWLRQV • Dual-Band CDMA Base Stations • W-CDMA Base Stations • TDMA/TDMA-EDGE Base Stations • WLAN and WLL Systems • GSM-EDGE/EGSM Base Stations • TETRA Systems 5 3URGXFW 'HVFULSWLRQ The RF2480 is a monolithic integrated quadrature modulator IC capable of universal direct modulation for highfrequency AM, PM, or compound carriers. This low-cost


    Original     		PDF RF2480 RF2480 800MHz 2500MHz. Compone13

    741 IC circuit applications

    Abstract: No abstract text available
    Text: Ordering number:ENN4856 NPN Epitaxial Planar Silicon Transistor 2SC4867 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.2dB typ f=1GHz . · High gain : S21e2=13dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ.


    Original     		PDF ENN4856 2SC4867 S21e2 2059B 2SC4867] 741 IC circuit applications

    KT 819 transistor

    Abstract: 2SC4868 ITR07675 ITR07676 ITR07677 ITR07678 TRANSISTOR KT 837
    Text: Ordering number:ENN5043 NPN Epitaxial Planar Silicon Transistor 2SC4868 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.2dB typ f=1GHz . · High gain : ⏐S21e⏐2=13dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ.


    Original     		PDF ENN5043 2SC4868 S21e2 2018B 2SC4868] KT 819 transistor 2SC4868 ITR07675 ITR07676 ITR07677 ITR07678 TRANSISTOR KT 837

    Untitled

    Abstract: No abstract text available
    Text: MICRO DEVICES 2.5GHZ DIRECT QUADRATURE MODULATOR T y p ic a l A p p lic a tio n s • Digital Communications Systems • GSM, DCS 1800, JDC, D-AMPS Systems • Spread-Spectrum Communication Systems • Commercial and Consumer Systems • GMSK,QPSK, DQPSK, QAM Modulation


    OCR Scan     		PDF RF2422 800MHz 2500MHz. 900MHz 2000MHz 2500MHz 1900MHz