Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 42E » 7=^4142 DQIOTST G ÊSSMGK P R ELIM INA R Y “ BiCMOS SRAM KM68B257 3 2 K X 8 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Time —Commercial: 10ns, 12ns, 15ns —6ns Output Enable time • Low Power Dissipation
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KM68B257
195mA,
175mA,
150mA
28-pin
28-pln
KM68B257
144-bit
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Untitled
Abstract: No abstract text available
Text: KMM466F203BS-L KMM466F213BS-L DRAM MODULE KMM466F203BS-L & KMM466F213BS-L EDO Mode without buffer 2Mx64 based on 2Mx8, 2K & 4K Refresh, 3.3V, Low Power/Self-Refresh G ENER AL DESCRIPTION FEATURES The Samsung KMM466F20 1 3BS-L is a 2M bit x 64 Dynamic RAM high density memory module. The
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KMM466F203BS-L
KMM466F213BS-L
KMM466F213BS-L
2Mx64
KMM466F20
cycles/128ms,
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Untitled
Abstract: No abstract text available
Text: KM416C1004BJ CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM416C1004BJ
1Mx16
DD302t4
D0302bS
Q03D2bb
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KM29N32000TS
Abstract: km29n32000 0D243 E5HY
Text: KM29N32000TS/RS 4M X FLASH MEMORY 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N32000TS/RS is a 4M 4,194,304 x8 bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for the
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KM29N32000TS/RS
250us
j\N256ByleV
\N256ByteN
D02M332
KM29N32000TS
km29n32000
0D243
E5HY
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KM4216C
Abstract: No abstract text available
Text: KM4232W259 CMOS WINDOW RAM FEATURES DESCRIPTION • 1M Byte Frame-Buffer on a single chip • 1.6 G-Byte/Second Internal Bus: - Fast W indow Drawing Operations - F ill at up to 1.6 G Byte/Second -A lig n e d BitBLT at up to 0 .6 4 G-Byte/Second • 8-Column B lock W rite w ith B it and Byte Masking
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KM4232W259
KM4232W259
7Tb4142
KM4216C/V255/6/8
05MIN
0027fi2fl
KM4216C
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