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    7N6 SOT23 Search Results

    7N6 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL28114SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL28113SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation

    7N6 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Marking 7n6 Mosfet

    Abstract: marking 7n6 7n6 diode zxmn6a07f
    Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS Max RDS(on) 60V 250mΩ@ VGS= 10V 350mΩ @ VGS= 4.5V Max ID TA = 25°C (Note 7) 1.4A 1.2A Description This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for


    Original     		PDF ZXMN6A07F AEC-Q101 DS33547 Marking 7n6 Mosfet marking 7n6 7n6 diode zxmn6a07f

    Marking 7n6 Mosfet

    Abstract: 7n6 diode marking 7n6 ZXMN6A07F ZXMN6A07FQTA tr/transistor 7n6
    Text: A Product Line of Diodes Incorporated ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS Max RDS(on) 60V 250mΩ @ VGS= 10V 350mΩ @ VGS= 4.5V Max ID TA = 25°C (Note 7) 1.4A 1.2A Description This MOSFET utilizes a unique structure that combines the benefits


    Original     		PDF ZXMN6A07F AEC-Q101 DS33547 Marking 7n6 Mosfet 7n6 diode marking 7n6 ZXMN6A07F ZXMN6A07FQTA tr/transistor 7n6

    ZXMN6A07F

    Abstract: ZXMN6A07FTA ZXMN6A07FTC 18a diode sot23 18a sot23 Marking 7n6 Mosfet
    Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=60V; RDS(ON)=0.4 D=1.05A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power


    Original     		PDF ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC uni00 ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC 18a diode sot23 18a sot23 Marking 7n6 Mosfet

    Untitled

    Abstract: No abstract text available
    Text: ZXMN6A07F 60V SOT23 N-channel enhancement mode mosfet Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.250 @ VGS= 10V 1.4 0.350 @ VGS= 4.5V 1.2 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast


    Original     		PDF ZXMN6A07F D-81541

    marking 7n6

    Abstract: 7n6 SOT23 TS16949 ZXMN6A07F ZXMN6A07FTA regulator 59
    Text: ZXMN6A07F 60V SOT23 N-channel enhancement mode mosfet Summary RDS on (⍀) ID (A) 0.250 @ VGS= 10V 1.4 0.350 @ VGS= 4.5V 1.2 V(BR)DSS 60 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast


    Original     		PDF ZXMN6A07F ZXMN6A07FTA D-81541 marking 7n6 7n6 SOT23 TS16949 ZXMN6A07F ZXMN6A07FTA regulator 59

    ZXMN6A07F

    Abstract: ZXMN6A07FTA ZXMN6A07FTC Marking 7n6 Mosfet
    Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.4 ID=1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC Marking 7n6 Mosfet

    Untitled

    Abstract: No abstract text available
    Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.4⍀ D=1.05A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power


    Original     		PDF ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC

    Marking 7n6 Mosfet

    Abstract: marking 7n6 18a diode sot23 7n6 diode ZXMN6A07F
    Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 60V; RDS(ON) = 0.300 ID = 1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC 7N6-04 Marking 7n6 Mosfet marking 7n6 18a diode sot23 7n6 diode ZXMN6A07F

    ZXMN6A07F

    Abstract: Marking 7n6 Mosfet
    Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 60V; RDS(ON) = 0.300 ID = 1.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN6A07F ZXMN6A07FTA ZXMN6A07FTC ZXMN6A07F Marking 7n6 Mosfet