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Fuji Electric Co Ltd 7MBR100U4B-120-50 Igbt Module, 1.2Kv, 100A, 390W; Continuous Collector Current:100A; Collector Emitter Saturation Voltage:2.85V; Power Dissipation:390W; Operating Temperature Max:150°C; Igbt Termination:Solder Pin; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Fuji Electric 7MBR100U4B-120-50
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Newark	7MBR100U4B-120-50	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Fuji Electric Co Ltd 7MBR100U4B120-50 Our Stock
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Velocity Electronics	7MBR100U4B120-50		5			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Fuji Electric Semiconductors 7MBR100U4B-120-50 IGBT PIM MOD.3PH D.BRID.SEVEN 100A 1200V U SERIES
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Ozdisan Elektronik	7MBR100U4B-120-50		72			1 $135.92722 10 $129.4545 100 $129.4545 1000 $129.4545 10000 $129.4545	Buy Now
Fuji Electric Semiconductors 7MBR100U4B120-54 IGBT PIM MOD.3PH D.BRID.SEVEN 100A 1200V U SERIES
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Ozdisan Elektronik	7MBR100U4B120-54					1 $149.02083 10 $141.9246 100 $141.9246 1000 $141.9246 10000 $141.9246	Get Quote

7MBR100U4B120 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
7MBR100U4B120		Fuji Electric	Power Integrated Module		Original	PDF

7MBR100U4B120 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
7MBR100U4B120 Abstract: 7mbr100u4b-120 ED-4701 MT5F12959 A1352 Text: SPECIFICATION Device Name : Type Name : Spec. No. : Feb. 02 ’05 S.Miyashita Feb. 02 ’05 M.W atanabe Y.Seki K.Yamada Power Integrated Module 7MBR100U4B120 MS6M 0856 MS6M0856 1 15 H04-004-07b R e v i s e d Date Classification Feb.-02 -’05 Enactment Ind.	Original	PDF	7MBR100U4B120 MS6M0856 H04-004-07b H04-004-06b H04-004-03a 7MBR100U4B120 7mbr100u4b-120 ED-4701 MT5F12959 A1352
7MBR100U4B120-50 Abstract: MS5F6212 Text: SPECIFICATION Device Name : Power Integrated Module RoHS compliant product Type Name Spec. No. : : 7MBR100U4B120-50 MS6M 0961 Feb. 02 ’06 K.Muramatsu T.Miyasaka Feb. 02 ’06 M.W atanabe K.Yamada MS6M0961 1 16 H04-004-07b R e v i s e d Date Classification	Original	PDF	7MBR100U4B120-50 MS6M0961 H04-004-07b H04-004-06b 7MBR100U4B120-50 H04-004-03a MS5F6212
mp2a5100 Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 Text: 富士電機半導体総合カタログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors	Original	PDF	RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
2MBI450U4E-120 Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120 Text: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現！	Original	PDF	max175 2MBI600TN-060V 2MBI450UN-120V 2MBP600UN-120V 2MBI450U4E-120 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120