sumitomo epoxy 6300h
Abstract: sumitomo epoxy eme6300h sumitomo 6300h mold compound prime p27 EME-6300H mos die Sumitomo 1000
Text: Qualification Report May, 1993, QTP 92114 Version 1.0 2K X 16 PROM FAB2 QUALIFICATION MARKETING PART NUMBER DEVICE DESCRIPTION 7C258 2K x 16 Reprogrammable State Machine PROM 7C259 2K x 16 Reprogrammable State Machine PROM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:
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7C258
7C259
CY7C258/259
7C258/9
sumitomo epoxy 6300h
sumitomo epoxy eme6300h
sumitomo 6300h mold compound
prime p27
EME-6300H
mos die
Sumitomo 1000
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MSM 6290
Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+
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2147-35C
7C147-35C
27S03M
54S189M
7C170A-45M
7C170A-35M
2147-45C
27S07AC
7C190-25C
MSM 6290
msm 5562
27c256 intel
62c512
AP 2068
27C512 microchip
62256
57C256
27C512 SGS-THOMSON
27C512-150
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bcm 4330
Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?
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AS7C259-15PC
Abstract: AS7C259-15JC
Text: $6& 9.ð &02665$0 HDWXUHV • Low power consumption - Active: 633 mW max 10 ns cycle) - Standby: 11 mW max, CMOS I/O - Very low DC component in active power • 2.0V data retention • Equal access and cycle times /RJLFEORFNGLDJUDP 3LQDUUDQJHPHQW
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AS7C259
AS7C259-15PC
AS7C259-20PC
AS7C259-25PC
AS7C259-15JC
AS7C259-20JC
AS7C259-25JC
AS7C259-15PC
AS7C259-15JC
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taa 723
Abstract: concord
Text: High Performance 32Kx9 CMOS SRAM 7C259 7C259L 32K×9 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words × 9 bits • 2.0V data retention (L version) • High speed • Equal access and cycle times – 12/15/20/25/35 ns address access time
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AS7C259
AS7C259L
32-pin
taa 723
concord
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27HC642
Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+
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2147-35C
7C147-35C
27S03M
54S189M
7C170A-45M
7C170A-35M
2147-45C
27S07AC
7C190-25C
27HC642
39C10B
PAL22V10APC
CY2254SC-1
7132SA70
93L422AM
7024S15
7130SA25
7C198-45C
7006S
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5962L0053605VYC
Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Text: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A
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MIL-HDBK-103AJ
MIL-HDBK-103AH
MIL-HDBK-103AJ
5962L0053605VYC
5962-9069204QXA
ATMEL 302 24C16
UT9Q512E-20YCC
MOH0268D
UT54ACS164245SEIUCCR
Z085810
5962-9762101Q2A
UT28F256QLET-45UCC
5962R0250401KXA
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cp 9AA
Abstract: No abstract text available
Text: PRELIMINARY r v p p r Q c = SEMICONDUCTOR 2K x 16 Reprogrammable State Machine PROM Features F unctional D escription • High speed: 83-MHz operation T he CY 7C258 and CY 7C259 are 2 K x 16 C M O S PR O M S specifically designed fo r use in state m achine applications.
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CY7C258
CY7C259
83-MHz
73--A
cp 9AA
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Untitled
Abstract: No abstract text available
Text: s CY7C258 7C259 ~ - .V CYPRESS SEMICONDUCTOR 2Kx 16 Reprogrammable State Machine PROM Features Functional Description • T h e CY 7C258 and CY 7C259 are 2K x 16 C M O S PR O M s specifically designed for use in state m achine applications. H igh speed: 100-M H z op eration
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CY7C258
CY7C259
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Untitled
Abstract: No abstract text available
Text: This is an abbreviated datasheet. The complete CY7C258/9 datasheet is listed in the PROM section of this Data Book. "ZX CYPRESS SEMICONDUCTOR 2K x 16 Reprogrammable State Machine PROM F eatures F unctional D escrip tion • High speed: 100-MHz operation The CY 7C258 and CY 7C259 are 2K x 16
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CY7C258/9
CY7C258
CY7C259
10-ns
28-pin,
300-mil
CY7C259
44-pin
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Untitled
Abstract: No abstract text available
Text: CY7C258 7C259 CYPRESS 2K x 16 Reprogrammable State Machine PROM Features Functional Description • High speed: 100-MHz operation — tcp = 10 ns T h e CY 7C258 and CY 7C259 are 2K x 16 C M O S P R O M s specifically designed for use in state m achine applications.
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100-MHz
CY7C258
CY7C259
CY7C259
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c2581
Abstract: c258 380017 h67 YW 333Q C2584 AS1729
Text: CY7C258 7C259 CYPRESS SEMICONDUCTOR 2K x 16 Reprogrammable State Machine PROM Features Functional Description • High speed: 100-MHz operation T h e CY7C258 an d CY 7C259 are 2K x 16 C M O S P R O M s specifically designed for use in state m achine applications.
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CY7C258
CY7C259
100-MHz
16-bit-wide
CY7C259)
CY7C258
28-pin,
300-mil
CY7C259
44-pin
c2581
c258
380017
h67 YW
333Q
C2584
AS1729
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c258
Abstract: CERAMIC LEADLESS CHIP CARRIER h67 YW PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC
Text: CY7C258 7C259 CYPRESS 2Kx 16 Reprogrammable State Machine PROM Features Functional Description • High speed: 100-MHz operation T h e CY7C258 and 7C259 a re 2K x 16 C M O S P R O M s specifically designed for use in state m achine applications. — tc p — 10 ns
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CY7C258
CY7C259
100-MHz
11-bit-wide
CY7C259)
28-pin,
300-mil
CY7C259
44-pin
c258
CERAMIC LEADLESS CHIP CARRIER
h67 YW
PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CYPRESS SEMICONDUCTOR Features 2K x 16 Reprogrammable State Machine PROM Functional Description The CY7C258 and 7C259 are 2K x 16 CMOS PROMS specifically designed for — tcp = 12 ns use in state machine applications. — tcKO = 9 ns State machines are one of the most com
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CY7C258
CY7C259
16-bit-wide
83-MHz
0173-A
CY7C258
CY7C259
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Untitled
Abstract: No abstract text available
Text: High Performance 32Kx9 CMOS SRAM II 7C259 7C259L 32Kx9 CMOS SRAM Common I/O FEATURES Organization: 32,768 words x 9 bits • 2.0V data retention (L version) High speed • Equal access and cycle times - 12/15/20/25/35 ns address access tíme • Easy memory expansion with CE1, CE2, and OE inputs
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32Kx9
AS7C259
AS7C259L
32Kx9
32-pin
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c258
Abstract: 333Q TCSV
Text: CYPRESS SE MI CON DUCTOR 4bE D —-r ^ P s s te ^ R E L I M I 1*3 CYPRESS • •• SEMICONDUCTOR B SSflRbbE 0Q0b773 7 C3 CYP N A R — .-— CY7C258 7C259 Y "1" 1~= 2K x 16 Reprogrammable State Machine PROM Features Functional Description • High speed: 83-MHz operation
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0GQb773
CY7C258
CY7C259
83-MHz
16-bit-wide
CY7C259)
28-pin,
CY7C259
44-pin
c258
333Q
TCSV
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Untitled
Abstract: No abstract text available
Text: High Performance 32Kx9 CMOS SRAM II 7C259 7C259L 32 Kx 9 C M O S S R A M C o m m o n I/O {F E A TU R E S • Organization: 32,768 words x 9 bits • 2.0V data retention (L version) • High Speed - Industry's fastest OE Access Time 12/15/20/25/35 ns Address access time
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32Kx9
AS7C259
AS7C259L
605mW
125mW
10MHz
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Untitled
Abstract: No abstract text available
Text: H ¡j>li P n ' l o m u m r S Z K x 1- C M O S SK A M •■ \ S 7 ' 2 S l) \ S 7 ( ’ Z S 4 |. A II Ì2 K X 9 C M O S S MA M • Organization: 32,768 words x 9 bits • High speed - 1 2 /1 5 /2 0 /2 S /3 5 ns address access time - 3 / 4 / 5 / 6 / 8 ns output enable access time
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32-pin
AS7C259
AS7C259L
S7C259
AS7C259-15PC
AS7C259L-15PC
AS7C259L-15JC
AS7C259-20PC
AS7C259L-20PC
AS7C259-20JC
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Untitled
Abstract: No abstract text available
Text: 32Kx9 Fast SRAM 7C259 Features Logic Block Diagram ♦ High Performance CMOS: tAA=12-35 ns ♦ Fast OE access: t0 E=3-8 ns Vcc GND ♦ Low power - 633 mW @ 100 MHz - 11 mW @ 10 MHz standby AO A1 - 2.75 mW @ 10 MHz standby: L version A2 A3 ♦ Automatic CE1/CE2 power down
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32Kx9
AS7C259
AS7C259
th9-15
7C259-20
7C259-25
7C259-35
7C259-12
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27C258
Abstract: C258 c2581
Text: CY7C258 7C259 CYPRESS 2Kx 16 Reprogrammable State Machine PROM Features Functional Description • High speed: 100-MHz operation T h e CY7C258 and 7C259 a re 2K x 16 C M O S P R O M s specifically designed for use in state m achine applications. — tc p — 10 ns
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CY7C258
CY7C259
100-MHz
11-bit-wide
CY7C259)
28-pin,
300-mil
44-pin
27C258
C258
c2581
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Untitled
Abstract: No abstract text available
Text: High Performance 32KX9 A S7C 259 A S7C 259L C M O S SRA M 3 2 K x 9 CMOS SRAM • Easy memory expansion with CEI, CE2, and OE inputs • TTL-compatible, three-state 1/O • 32-pin JEDEC standard packages - 300 mil PDIP and SOJ • ESD protection > 2 0 0 0 volts
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32KX9
32-pin
AS7C259
OQ344c
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Untitled
Abstract: No abstract text available
Text: CY7C258 7C259 CYPRESS 2K x 16 Reprogrammable State Machine PROM Features Functional Description • High speed: 100-MHz operation T h e CY 7C258 an d 7C259 are 2K x 16 C M O S P R O M s specifically designed for u se in state m achine applications. — tcp = 10 ns
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CY7C258
CY7C259
100-MHz
7C258
CY7C259
11-bit-wide
CY7C259)
00i30b3
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0Q004
Abstract: 41516 taa 723
Text: High Performance 32Kx9 CMOS SRAM II 7C259 7C259L 32Kx9 CMOS SRAM Common I/O FEATU RES Organization: 32,768 words x 9 bits • 2.0V data retention (L version) High speed • Equal access and cycle times - 12/15/20/25/35 ns address access tim e • Easy memory expansion with CE1, CE2, and OE inputs
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AS7C259
32Kx9
AS7C259L
32Kx9
32-pin
0Q004
41516
taa 723
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