7C168A
Abstract: CY7C168A CY7C169A 7C169
Text: CY7C168A 7C169A 4Kx4 RAM Features Functional Description • Automatic power-down when deselected 7C168A • CMOS for optimum speed/power • High speed — tAA = 15 ns — tACE = 10 ns (7C169A) • Low active power — 385 mW • Low standby power (7C168A)
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CY7C168A
CY7C169A
7C168A)
7C169A)
CY7C168A
CY7C169A
7C168A
7C169
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CY7C168A-45DMB
Abstract: 7C168A CY7C168A CY7C169A
Text: 1CY 7C16 9A CY7C168A 7C169A 4Kx4 RAM Features Functional Description • Automatic power-down when deselected 7C168A • CMOS for optimum speed/power • High speed — tAA = 15 ns — tACE = 10 ns (7C169A) • Low active power — 385 mW • Low standby power (7C168A)
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CY7C168A
CY7C169A
7C168A)
7C169A)
CY7C168A
CY7C169A
CY7C168A-45DMB
7C168A
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cy3341
Abstract: 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram
Text: Product Selector Guide Static RAMs Organization/Density Density X1 X4 X4 SIO 7C147 2147 7C123 7C148 7C149 7C150 7C189 7C190 2148 2149 7C122 9122 93422 7C167A 7C168A 7C169A 7C170A 7C171A 7C172A 7C128A 7C187 7C164 7C166 7C161 7C162 7C185 6264 7C182 7C197 7C194
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7C147
7C123
7C148
7C149
7C150
7C189
7C190
7C122
7C167A
7C168A
cy3341
64K X 4 CACHE SRAM
CY7C190
pasic380
cy7c189
palce22v10 programming guide
palce16v8 programming algorithm
STATIC RAM 6264
vhdl code for 8-bit parity checker
64x18 synchronous sram
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81c78
Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Text: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M
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2147-35C
2147-45C
2147-45M+
2147-55C
2147-55M
2148-35C
2148-35M
2148-45C
81c78
7C291
5962-8515505RX
27PC256-12
PAL164A
8464C
5C6408
72018
39C10B
MACH110 cross reference
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MSM 6290
Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+
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2147-35C
7C147-35C
27S03M
54S189M
7C170A-45M
7C170A-35M
2147-45C
27S07AC
7C190-25C
MSM 6290
msm 5562
27c256 intel
62c512
AP 2068
27C512 microchip
62256
57C256
27C512 SGS-THOMSON
27C512-150
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27HC642
Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+
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2147-35C
7C147-35C
27S03M
54S189M
7C170A-45M
7C170A-35M
2147-45C
27S07AC
7C190-25C
27HC642
39C10B
PAL22V10APC
CY2254SC-1
7132SA70
93L422AM
7024S15
7130SA25
7C198-45C
7006S
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7C168A
Abstract: CY7C168A CY7C169A
Text: CY7C168A 7C169A 4K x 4 RAM Features D The CY7C168A and 7C169A are highĆ performance CMOS static RAMs orgaĆ nized as 4096 by 4 bits. Easy memory exĆ pansion is provided by an active LOW chip enable CE and threeĆstate drivers. The CY7C168A has an automatic powerĆdown
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CY7C168A
CY7C169A
CY7C168A
CY7C169A
7C168A)
7C168A
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7C168A
Abstract: CY7C168A CY7C169A 7C168 CY7C168A-25LMB
Text: CYPRESS SEM ICOND UC TO R MhE D ^ B 250^2 GODbSlM 5 O C V P ,7 ^ CY7C168A 7C169A <VH 'V? -O 2> CYPRESS SEMICONDUCTOR Features Automatic pow er-dow n when dese lected 7C168A CMOS for optimum speed/power High speed — U a = 15 n s — tACE = 10ns(7C169A)
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CY7C168A
CY7C169A
7C168A)
7C169A)
7C168)
2001Velectrostatic
CY7C168A
CY7C169A
CY7CI68Ahas
CY7C169A-45FMB
7C168A
7C168
CY7C168A-25LMB
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7c169A
Abstract: No abstract text available
Text: CY7C168A 7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese lected 7C168A • CMOS for optimum speed/power • Highspeed — tAA = 15 ns — tACE = l« n s (7C169A) • Low active power — 385 mW • Low standby power (7C168)
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CY7C168A
CY7C169A
7C168A)
7C169A)
7C168)
7C168
7c169A
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CY7C
Abstract: LED1014 168A4
Text: CY7C168A 7C169A 4Kx4 RAM Features Functional Description • A utom atic power-down when deselected 7C168A • CMOS fo r optim um speed/power • High speed — tAA = 1 5 n s — tACE = 10 ns (7C169A) • Low active power — 385 mW The CY7C168A and 7C169A are high-performance CMOS
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CY7C168A
CY7C169A
7C168A)
7C169A)
CY7C169A
CY7C
LED1014
168A4
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CY7C
Abstract: No abstract text available
Text: CY7C168A 7C169A CYPRESS SEMICONDUCTOR Features A u to m atic pow er-dow n w hen dese lected 7C168A C M O S fo r o p tim u m speed/pow er H igh speed — 15 n s t*A — 10 n s U c e (7C169A) low active pow er — 385 m W Low stan d b y pow er (7C168)
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CY7C168A
CY7C169A
7C168A)
7C169A)
7C168)
7C168
38-00095-D
CY7C
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Untitled
Abstract: No abstract text available
Text: CY7C168A 7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese lected 7C168A • CMOS for optimum speed/power • H ighspeed — 1 \ \ = 15 ns — t A C E = 10ns(7C 169A ) • Low active power — 385 mW • Low standby power (7C168)
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CY7C168A
CY7C169A
7C168A)
7C168)
7C168
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Untitled
Abstract: No abstract text available
Text: CY7C168A 7C169A CYPRESS 4K x 4 Static RAM specified on the address pins Ao through Features Functional D escription • Automatic power-down when dese lected (CY7C168A The CY7C168A and 7C169A are highperform ance CM OS static RAM s orga nized as 4096 by 4 bits. Easy memory ex
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CY7C168A)
CY7C169A)
CY7C168A
CY7C169A
7C169A
--25PC
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7C168A
Abstract: CY7C168A CY7C169A
Text: CY7C168A 7C169A ’= C Y P R ESS 4K x 4 Static RAM specified on the address pins Ao through Features Functional Description • Automatic power-down when dese lected (CY7C168A • CMOS for optimum speed/power • High speed The CY7C168A and 7C169A are high
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CY7C168A
CY7C169A
CY7C168A)
CY7C169A)
CY7C169A
CY7C169Aâ
20-Lead
7C168A
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7C168A
Abstract: CY7C168A CY7C169A
Text: CY7C168A 7C169A ’= CYPRESS 4K x 4 Static RAM specified on the address pins Ao through Features Functional Description • Automatic power-down when dese lected (CY7C168A • CMOS for optimum speed/power • High speed The CY7C168A and 7C169A are highperformance CMOS static RAMs orga
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CY7C168A
CY7C169A
CY7C168A)
CY7C169A)
CY7C169Aâ
20-Lead
7C168A
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4SCE
Abstract: No abstract text available
Text: CY7C168A 7C169A CYPRESS SEMICONDUCTOR Features Automatic power-down when dese lected 7C168A CMOS for optimum speed/power High speed — ìaa = 15 ns — »ACE = 10 ns (7CI69A) Low active power — 385 mW Low standby power (7C168) — 83 mW TTL-compatible inputs and outputs
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CY7C168A
CY7C169A
7C168A)
7CI69A)
7C168)
inp69A
--35VC
7C168
095-E
4SCE
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Untitled
Abstract: No abstract text available
Text: CY7C168A 7C169A f^ Y P D T T C C 4K x 4 R/W RAM SEMICONDUCTOR Features • Automatic power-down when dese lected 7C168A • Capable o f w ithstanding greater than 2001V electrostatic discharge is w ritten into the m em ory location speci fied on the address pins (Ao through A n ).
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CY7C168A
CY7C169A
7C168A)
7C168A
7C169A
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Untitled
Abstract: No abstract text available
Text: CY7C168A 7C169A CYPRESS SEMICONDUCTOR Features • Automatic power-down when dese lected 7C168A • CMOS for optimum speed/power • High speed — t « = IS ns • Low active power — 385 mW • Low standby power (7C168) - 8 3 mW — tACE = 10 ns (7CI69A)
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CY7C168A
CY7C169A
7C168A)
7CI69A)
7C168)
pedancCY7C168A
CY7C169A
7C168
38-00095-D
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Untitled
Abstract: No abstract text available
Text: CY7C168 CY7C169 r CYPRESS SEMICONDUCTOR Functional Description Automatic power-down when dese lected 7C168 CMOS for optimum speed/power High speed — t*A = 25 ns — *a c e = 15 ns (7C169) Low active power — 385 mW Low standby power (7C168) — 83 mW
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CY7C168
CY7C169
7C168)
7C169)
CY7C168A
CY7C169A
7C16H
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