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    7922 DIODE Search Results

    7922 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    7922 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LP 8029

    Abstract: DIN 7990 CQY 26 7922 diode cqy 35 n BPW17N CQY37N cqy 17
    Text: CQY 37 N TELEFUNKEN Semiconductors GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


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    PDF CQY37N BPW17N D-74025 LP 8029 DIN 7990 CQY 26 7922 diode cqy 35 n BPW17N cqy 17

    Untitled

    Abstract: No abstract text available
    Text: CQY37N Vishay Telefunken ¾ GaAs Infrared Emitting Diode in Miniature T– Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


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    PDF CQY37N CQY37N BPW17N D-74025 20-May-99

    BPW17

    Abstract: CQY37N BPW17N
    Text: CQY37N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


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    PDF CQY37N CQY37N BPW17N D-74025 20-May-99 BPW17

    BPW17

    Abstract: BPW17N CQY37 CQY37N
    Text: CQY37N Vishay Semiconductors ¾ GaAs Infrared Emitting Diode in Miniature T– Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


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    PDF CQY37N CQY37N BPW17N D-74025 20-May-99 BPW17 CQY37

    CQY37

    Abstract: No abstract text available
    Text: CQY37N VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


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    PDF CQY37N CQY37N BPW17N D-74025 29-Mar-04 CQY37

    Untitled

    Abstract: No abstract text available
    Text: CQY37N VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


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    PDF CQY37N CQY37N BPW17N D-74025 05-May-04

    CQY37

    Abstract: No abstract text available
    Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


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    PDF CQY37N CQY37N BPW17N 2002/95/EC 2002/96/EC D-74025 08-Mar-05 CQY37

    Untitled

    Abstract: No abstract text available
    Text: CQY37N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


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    PDF CQY37N CQY37N BPW17N D-74025 20-May-99

    BPW17N

    Abstract: CQY37N BPW17
    Text: CQY37N GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical


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    PDF CQY37N CQY37N BPW17N D-74025 15-Jul-96 BPW17

    Untitled

    Abstract: No abstract text available
    Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


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    PDF CQY37N CQY37N BPW17N 2002/95/EC 2002/96/EC 18-Jul-08

    BPW17

    Abstract: telefunken BPW17N CQY37N
    Text: CQY37N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


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    PDF CQY37N CQY37N BPW17N D-74025 20-May-99 BPW17 telefunken

    CQY37N

    Abstract: 7922 diode BPW17 Infrared Emitting Diode BPW17N
    Text: CQY37N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : ∅ 1.8 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 12°


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    PDF CQY37N BPW17N 2002/95/EC 2002/96/EC CQY37N 18-Jul-08 7922 diode BPW17 Infrared Emitting Diode BPW17N

    BPW17

    Abstract: BPW17N CQY37N
    Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


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    PDF CQY37N CQY37N BPW17N 2002/95/EC 2002/96/EC D-74025 30-Mar-06 BPW17

    BPW17

    Abstract: BPW17N CQY37N
    Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


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    PDF CQY37N CQY37N BPW17N 2002/95/EC 2002/96/EC 08-Apr-05 BPW17

    BPW17N

    Abstract: CQY37N
    Text: CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity:  = ± 12° • Low forward voltage


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    PDF CQY37N BPW17N 2002/95/EC 2002/96/EC CQY37N 11-Mar-11 BPW17N

    BPW17

    Abstract: BPW17N CQY37N
    Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


    Original
    PDF CQY37N CQY37N BPW17N 2002/95/EC 2002/96/EC 08-Apr-05 BPW17

    BPW17

    Abstract: BPW17N CQY37N
    Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


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    PDF CQY37N CQY37N BPW17N 2002/95/Eed 08-Apr-05 BPW17

    12109

    Abstract: No abstract text available
    Text: CQY37N Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity:  = ± 12° • Low forward voltage


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    PDF CQY37N BPW17N 2002/95/EC 2002/96/EC CQY37N 950trademarks 2011/65/EU 2002/95/EC. 12109

    siemens m

    Abstract: sensor x-ray dental sensor e2v MA 785 A dental x-ray sensor CCD76-40
    Text: CCD76-40 Digital Intra-Oral X-ray Dental Sensor FEATURES The device is not designed for autoclaving but will withstand cleansing solutions defined within this data sheet. The package material is a conductive carbon fibre composite. * 1250 x 1640 Pixel Image Area


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    PDF CCD76-40 DHA-PC14-3G DHA-HPD14-10 CCD76-40, siemens m sensor x-ray dental sensor e2v MA 785 A dental x-ray sensor

    7400AS

    Abstract: No abstract text available
    Text: Control & Measurement PRODUCT Catalogue www.trumeter.com 03 Dear Customer, It is with great pleasure and pride that I write this introduction to our brand new product catalogue. This is the best catalogue that we have ever produced and contains exciting new products, as well as all the core products that


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    PDF 240VAC/DC, 7400AS

    Untitled

    Abstract: No abstract text available
    Text: S 9 P S P T 7922 T 12-BIT, 30 MSPS, TTL, A/D CONVERTER SIGNAL PROCESSING TECHNOLOGIES FEATURES APPLICATIONS • • • • • • • • • • • • • • • • Monolithic 12-Bit 30 MSPS Converter 64 dB SNR @ 3.58 MHz Input On-Chip Track/Hold


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    PDF 12-BIT, 12-Bit SPT7922 12-bit SPT7922 D0-D11

    SN54152

    Abstract: SNS4151A sn7451b
    Text: TYPES SN54150, SN54151A, SN54152A. SN54LS151, SN54LS152, SN54S151, SN74150, SN74151A, SN74LS151, SN74S151 DATA SELECTORS/MULTIPLEXERS B U L L E T I N N O . D L -S 7 6 1 1 8 1 9 , D E C E M B E R 1 9 7 2 - R E V I S E O O C T O B E R 1 9 7 6


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    PDF SN54150, SN54151A, SN54152A. SN54LS151, SN54LS152, SN54S151, SN74150, SN74151A, SN74LS151, SN74S151 SN54152 SNS4151A sn7451b

    sn74181

    Abstract: 7B222 SN74LS1S1 SN741S1
    Text: TYPES Sttfi4H1, SN54LS181, SKS4SH1. TTL MSI s m tm su m s« « , s i m i ARITHMETIC LOGIC UNITS/FUNCTION GENEftATOftS B U LLE TIN NO. DL-S 7611831. DECEMBER 197» - REVISED OCTOBER 1976 SN841B1, SN54LS1S1, SN54S181 . . . J OR W PACKAGE SN741S1, SN74LS1S1.8N74S181 . . . J O H N PACKAGE


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    PDF SN54LS181, SN841B1, SN54LS1S1, SN54S181 SN741S1, SN74LS1S1 8N74S181 7S222 sn74181 7B222 SN741S1

    TFK 839

    Abstract: TFK 609 TFK 834 AEG TFK TELEFUNKEN TFK 809 TFK 893 TFK 9730 tfk 944 TFK 505 am diode tfk 817
    Text: Tem ic Sales Offices TELEFUNKEN Semiconductors Addresses Europe Denmark Hungary THMIC Dansk c/o AFXi Dansk Aktieselskab Roskildevej 8-10 2620 Albcrtslund Tel: 45 42 64 85 22 Fax: 45 43 62 62 28 TEMIC TELEFUNKEN microelectronic GmbH Kruppstrasse 6 45128 Essen


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