APL3546A
Abstract: No abstract text available
Text: APL3546A Power -Distribution Switches with Soft Start Features General Description • • The APL3546A is a power-distribution switch with some protection functions. The device incorporates a 78mΩ N- 78mΩ High Side MOSFET Soft Start Time Programmable by External
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APL3546A
APL3546A
JESD-22,
MIL-STD-883-3015
100mA
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Q62702-A3471
Abstract: SCT-595
Text: BAW 78M Silicon Switching Diode Preliminary data 4 • Switching applications • High breakdown voltage 5 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration BAW 78M GDs Q62702-A3471 Package 1 = A 2 = C 3 n.c. 4 n.c. 5 = C SCT-595 Maximum Ratings
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VPW05980
Q62702-A3471
SCT-595
sold05
Jul-27-1998
EHB00047
EHB00048
Q62702-A3471
SCT-595
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SCT-595
Abstract: 78-AD
Text: BAW 78M Silicon Switching Diode Preliminary data 4 • Switching applications 5 • High breakdown voltage 3 2 1 VPW05980 Type Marking BAW 78M GDs Pin Configuration 1=A Package 2 = C 3 n.c. 4 n.c. 5 = C SCT-595 Maximum Ratings Parameter Symbol Diode reverse voltage
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VPW05980
SCT-595
Oct-08-1999
EHB00047
EHB00048
SCT-595
78-AD
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APL3546
Abstract: No abstract text available
Text: APL3546 Power -Distribution Switches with Soft Start General Description Features • • • The APL3546 is a power-distribution switch with some protection functions that can deliver current up to 2.5A. 78mΩ High Side MOSFET 2.5A Continuous Current The device incorporates a 78mΩ N-channel MOSFET
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APL3546
APL3546
JESD-22,
MIL-STD-883-3015
100mA
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1243C CPH6444 N-Channel Power MOSFET http://onsemi.com 60V, 4.5A, 78mΩ, Single CPH6 Features • • Low ON-resistance 4V drive • • Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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ENA1243C
CPH6444
PW10s,
900mm2
A1243-6/6
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1566B MCH6445 N-Channel Power MOSFET http://onsemi.com 60V, 4A, 78mΩ, Single MCPH6 Features • 4V drive • Low ON-resistance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings
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ENA1566B
MCH6445
1500mm2Ã
A1566-5/5
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1243C CPH6444 N-Channel Power MOSFET http://onsemi.com 60V, 4.5A, 78mΩ, Single CPH6 Features • • Low ON-resistance 4V drive • • Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter
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ENA1243C
CPH6444
900mm2Ã
A1243-6/6
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification FCX1053A Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 21mv Typ. Extremely low equivalent on-resistance. RCE sat 78mÙ at 4.5A.
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FCX1053A
100mA
100MHz
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FCX1053A
Abstract: FCX1053ATA 78m marking
Text: FCX1053A SOT89 NPN medium power transistor Summary BVCEO = 75V RCE sat = 78m⍀ IC = 3A Description This medium power NPN transistor, offered in the SOT89 package provides high current and low saturation voltage making it ideal for use in various driving and power management applications.
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FCX1053A
FCX1053A
FCX1053ATA
78m marking
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1566A MCH6445 N-Channel Power MOSFET http://onsemi.com 60V, 4A, 78mΩ, Single MCPH6 Features • • • 4V drive Low ON-resistance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage
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ENA1566A
MCH6445
PW10s,
1500mm2
A1566-7/7
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W344
Abstract: No abstract text available
Text: FW344A Ordering number : EN8998 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW344A General-Purpose Switching Device Applications Features • • • • • ON-resistance Nch : RDS on 1=49mΩ(typ.) Pch : RDS(on)1=78mΩ(typ.) 4V drive
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EN8998
FW344A
PW10s)
900mm2
W344
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Untitled
Abstract: No abstract text available
Text: FW344A Ordering number : EN8998A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW344A General-Purpose Switching Device Applications Features • • • • • ON-resistance Nch : RDS on 1=49mΩ(typ.) Pch : RDS(on)1=78mΩ(typ.) 4V drive
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EN8998A
FW344A
PW10s)
900mm2
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN8998C FW344A Power MOSFET http://onsemi.com 30V, 4.5A, 64mΩ, –30V, –3.5A, 102mΩ, Complementary Dual SOIC8 Features • • • • ON-resistance Nch : RDS on 1=49mΩ(typ.) Pch : RDS(on)1=78mΩ(typ.) 4V drive Halogen free compliance
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EN8998C
FW344A
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Untitled
Abstract: No abstract text available
Text: FW344A Ordering number : EN8998C SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW344A General-Purpose Switching Device Applications Features • • • • ON-resistance Nch : RDS on 1=49mΩ(typ.) Pch : RDS(on)1=78mΩ(typ.) 4V drive
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FW344A
EN8998C
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2070-P
Abstract: ANPEC Marking 2G2 APM2070P J-STD-020A
Text: APM2070P P-Channel Enhancement Mode MOSFET Features • • • • Pin Description -20V/-5A , RDS ON =78mΩ(typ.) @ VGS=-10V RDS(ON)=113mΩ(typ.) @ VGS=-4.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged G TO-252 Package D Top View of TO-252
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APM2070P
-20V/-5A
O-252
O-252
2070P
2070-P
ANPEC
Marking 2G2
APM2070P
J-STD-020A
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APM2070P
Abstract: APM2070PU STD-020C
Text: APM2070PU P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-8A, RDS ON =78mΩ (typ.) @ VGS=-10V RDS(ON)=113mΩ (typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)
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APM2070PU
-20V/-8A,
O-252
APM2070P
APM2070P
APM2070PU
STD-020C
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Untitled
Abstract: No abstract text available
Text: APM2070PU P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-5A , RDS ON =78mΩ(typ.) @ VGS=-10V RDS(ON)=113mΩ(typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)
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APM2070PU
-20V/-5A
O-252
2070P
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Untitled
Abstract: No abstract text available
Text: SC43B SMD POWER INDUCTORS MARKING ● Features 1. Open frame construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS DC Resistance Ω MAX (2) (1) Saturation(3) Temperature (4) Current Current (A) (A) SC43B-1R0
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SC43B
96MHZ
SC43B-1R8
SC43B-2R2
SC43B-2R7
SC43B-3R3
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Untitled
Abstract: No abstract text available
Text: SCC5D23 SMD POWER INDUCTORS XXX MARKING ● Features 1. Magnetically shielded construction – Low EMI 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS 2 (1) SCC5D23-2R7 SCC5D23-3R3 SCC5D23-3R9 SCC5D23-4R7 SCC5D23-5R6
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SCC5D23
SCC5D23-2R7
SCC5D23-3R3
SCC5D23-3R9
SCC5D23-4R7
SCC5D23-5R6
SCC5D23-6R8
SCC5D23-8R2
SCC5D23-100
SCC5D23-120
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Untitled
Abstract: No abstract text available
Text: SCRH105 SMD POWER INDUCTORS XXX MARKING Features 1. Magnetically shielded construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency CHARACTERISTICS 2 (1) SCRH105-1R2 SCRH105-2R5 SCRH105-3R3 SCRH105-4R7 SCRH105-5R6 SCRH105-6R8 SCRH105-8R2
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SCRH105
SCRH105-1R2
SCRH105-2R5
SCRH105-3R3
SCRH105-4R7
SCRH105-5R6
SCRH105-6R8
SCRH105-8R2
SCRH105-100
SCRH105-120
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAW 78M Silicon Switching Diode Preliminary data • Switching applications • High breakdown voltage Type Marking Ordering Code Pin Configuration BAW 78M GDs Q62702-A3471 1=A 2=C 3 n.c. Package 4 n.c. 5=C SCT-595 Maximum Ratings Parameter Symbol
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Q62702-A3471
SCT-595
100ns,
EHB00048
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAW 78M Silicon Switching Diode Preliminary data • Switching applications • High breakdown voltage Type Marking Ordering Code Pin Configuration BAW 78M GDs Q62702-A3471 1=A 2 =C 3 n.c. Package 4 n.c. 5 = C SCT-595 Maximum Ratings Parameter Symbol
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Q62702-A3471
SCT-595
100ns,
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UPC78M24A
Abstract: MPC78M18AHF MPC78M12 UPC78M05 MPC78M15AHF 78m15a MPC78 78M07A
Text: ¡» m ìa S iiti BIPOLAR ANALOG INTEGRATED CIRCUITS juPC78M00A SERIES THREE TERMINAL POSITIVE VOLTAGE REGULATORS DESCRIPTION ¿¿PC78M00A series are monolithic three terminal positive regulators which employ internally current limiting,therma1 shut down,output transistor safe operating area protection make them essentially indestructible.
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uPC78M00A
PC78M00A
/iPC78M00
MPC78M05AHF
iiPC73M06AHF
MPC78M08AHF
MPC7BM09AHF
MPC78M10AHF
iPC78M12AHF
MPC78M1
UPC78M24A
MPC78M18AHF
MPC78M12
UPC78M05
MPC78M15AHF
78m15a
MPC78
78M07A
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2SK2437
Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking
Text: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process
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MT980624TR
2SK2437
CPH3304
mosfet marking kf
78m marking
2SK2442
48M marking
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