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    HYM591000M

    Abstract: No abstract text available
    Text: HY UN DA I E L E C T R O N I C S SIE D •HYUNDAI SEMICONDUCTOR • 4L>75Gfifi TS3 H H Y N K HYM591000 1MX9-Bit C MOS DRAM MODULE M 4 4 1 2 0 1 C -J A N 9 2 18 DESCRIPTION FEATURES The HYM591000M is a 1M words by 9 bits dynamic RAM module and consists of nine


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    75Gfifi HYM591000 591000M HYM591000M HY531000J HYM591000 PDF

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    Abstract: No abstract text available
    Text: » H Y U N D A I H Y M 5 3 6 8 1 0 A M - S e r ie s 8M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or 7SOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit


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    36-bit HYM536810A HY5117400A HY514100A HYM53681OAM/ALM/ATM/ALTM HYM53681OAMG/ALMG/ATMG/ALTMG HYM536810A/AL HYM536810AT/ALT 4b75DflA PDF