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    75N60C Search Results

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    75N60C Price and Stock

    IXYS Corporation IXKN75N60C

    MOSFET N-CH 600V 75A SOT-227B
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    DigiKey IXKN75N60C Tube 703 1
    • 1 $68.18
    • 10 $52.498
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    Mouser Electronics IXKN75N60C 140
    • 1 $62.17
    • 10 $52.1
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    Newark IXKN75N60C Bulk 1
    • 1 $72.97
    • 10 $65.39
    • 100 $55.83
    • 1000 $54.23
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    TME IXKN75N60C 10 1
    • 1 $70.16
    • 10 $59.6
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    IXYS Corporation IXXH75N60C3

    IGBT 600V 150A 750W TO247
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    DigiKey IXXH75N60C3 Tube 300
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    TTI IXXH75N60C3 Tube 300
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    TME IXXH75N60C3 1
    • 1 $12.47
    • 10 $9.88
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    IXYS Corporation IXXH75N60C3D1

    IGBT 600V 150A 750W TO247
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    DigiKey IXXH75N60C3D1 Tube 300
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    TTI IXXH75N60C3D1 Tube 300
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    TME IXXH75N60C3D1 1
    • 1 $13.1
    • 10 $10.5
    • 100 $9.44
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    Infineon Technologies AG AIKW75N60CTXKSA1

    IC DISCRETE 600V TO247-3
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    DigiKey AIKW75N60CTXKSA1 Tube 240
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    Avnet Americas AIKW75N60CTXKSA1 Tube 20 Weeks 240
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    Mouser Electronics AIKW75N60CTXKSA1 935
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    Newark AIKW75N60CTXKSA1 Bulk 1
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    RS AIKW75N60CTXKSA1 Bulk 5 2 Weeks 1
    • 1 $11.62
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    TME AIKW75N60CTXKSA1 1
    • 1 $15
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    Chip1Stop AIKW75N60CTXKSA1 Tube 240
    • 1 $10.4
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    EBV Elektronik AIKW75N60CTXKSA1 21 Weeks 240
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    Infineon Technologies AG AIKW75N60CTE8188XKSA1

    IGBT 600V TO247-3
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    DigiKey AIKW75N60CTE8188XKSA1 Tube
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    75N60C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT-227 heatsink

    Abstract: 75n60 SOT-227 Package 335AB E72873 "SOT-227 B" dimensions
    Text: IXKN 75N60C CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 75 A Ω 36 mΩ D G Preliminary data S S miniBLOC, SOT-227 B E72873 MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90


    Original
    PDF 75N60C OT-227 E72873 SOT-227 heatsink 75n60 SOT-227 Package 335AB E72873 "SOT-227 B" dimensions

    75N60C

    Abstract: No abstract text available
    Text: IXKN 75N60C COOLMOS * Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 75 A 36 mΩ Ω D G S S miniBLOC, SOT-227 B MOSFET S Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C


    Original
    PDF 75N60C OT-227 75N60C

    Untitled

    Abstract: No abstract text available
    Text: IXKN 75N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 75 A RDS on) max = 36 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D miniBLOC, SOT-227 B S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source


    Original
    PDF 75N60C OT-227 20100609c

    20n60c

    Abstract: 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c
    Text: Product Change Notice PCN No.: 05-03 Customer: All IXYS product type: CoolMOS products in 600V: IXKC 20N60C, IXKC 40N60C IXKR 40N60C IXKF 40N60SCD1 IXKN 40N60C, IXKN 75N60C Description of change: CoolMOS die type C2 will be replaced by C3 Reason for change:


    Original
    PDF 20N60C, 40N60C 40N60SCD1 40N60C, 75N60C 14F12 20n60c 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c

    "SOT-227 B" dimensions

    Abstract: 75N60 sot-227
    Text: Advanced Technical Information CoolMOS Power MOSFET IXKN 75N60C VDSS ID25 RDS on 600 V 75 A Ω 35 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings S


    Original
    PDF 75N60C OT-227 E72873 "SOT-227 B" dimensions 75N60 sot-227

    75n60

    Abstract: M4x8 UPS SIEMENS C160 ID100
    Text: IXKN 75N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 75 A RDS on) max = 36 mΩΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B D S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source


    Original
    PDF 75N60C OT-227 20100609c 75n60 M4x8 UPS SIEMENS C160 ID100

    IXKN75N60C

    Abstract: 75n60 E72873
    Text: CoolMOS Power MOSFET IXKN 75N60C VDSS ID25 RDS on 600 V 75 A Ω 35 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Preliminary miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings S VGS ID25 ID90 dv/dt


    Original
    PDF 75N60C OT-227 E72873 IXKN75N60C IXKN75N60C 75n60 E72873

    75N60C

    Abstract: 75n60 IXKN75N60C UPS SIEMENS C160 SOT-227 heatsink
    Text: IXKN 75N60C CoolMOS 1 Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on) 600 V 75 A 36 mΩ Ω miniBLOC, SOT-227 B D S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source


    Original
    PDF 75N60C OT-227 20080523a 75N60C 75n60 IXKN75N60C UPS SIEMENS C160 SOT-227 heatsink

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    100N055

    Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D
    Text: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain


    OCR Scan
    PDF 02N50D 01N100D O-220AB O-247 20N60C 40N60C 75N60C 45N80C 100N055 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D