marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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transistor A798
Abstract: a1274 transistor A1137 A798 transistor
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA813T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1
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PA813T
2SC4570)
PA813T
PA813T-T1
transistor A798
a1274 transistor
A1137
A798 transistor
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738P
Abstract: No abstract text available
Text: TSSE Gas filled thermometer with contacts Main Features For corrosive gasses and liquids Class 1 according to EN 13190 Wetted parts and case material stainless steel Mechanical or inductive contacts Option : case material 1.4404 316L for aggressive atmosphere
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Windo5003
738P
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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Untitled
Abstract: No abstract text available
Text: TSFE Gas filled thermometer with capillary and contacts Main Features For corrosive gasses and liquids Class 1 according to EN 13190 Capillary 0.5 to 30 m Mechanical or inductive contacts Wetted parts and case material stainless steel
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2SC4570
Abstract: xy 801 ic
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA813T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1
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PA813T
2SC4570)
PA813T
PA813T-T1
2SC4570
xy 801 ic
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Untitled
Abstract: No abstract text available
Text: SIEMENS PZT 3904 NPN Silicon Switching Transistor • High DC current gain 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: PZT 3906 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) PZT 3904
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OCR Scan
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Q62702-Z2029
OT-223
D1E2M74
D12HM7S
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Untitled
Abstract: No abstract text available
Text: SIEMENS B A S 140W Silicon Schottky Diode • • • • General purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Type BAS 140W Pin Configuration Ordering Code tape and reel 1 2 Q62702-A1071 A C
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Q62702-A1071
OD-323
Q1E0320
EHD07166
02B5bD5
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor APPLICATIONS BFS17W PINNING Primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION PIN DESCRIPTION 1 base 2 emitter 3 collector 1 Silicon NPN transistor in a plastic
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BFS17W
OT323
BFS17W
BFS17.
MBC870
711062b
711Dfl5b
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BFS17W
Abstract: MBC870 BFS17 E1 BFS17 MARKING CODE E1 74t marking
Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor APPLICATIONS BFS17W PINNING Primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION PIN DESCRIPTION 1 base 2 emitter 3 collector 1 Silicon NPN transistor in a plastic
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BFS17W
OT323
BFS17W
BFS17.
MBC870
MB0240
OT323.
711005b
MBC870
BFS17 E1
BFS17
MARKING CODE E1
74t marking
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A6 SOD-323 MARK
Abstract: SMD sot23 marking E6 E3 SOD-323 MARK MiniMELF SMD Footprint DO-213AA SMZC36 MARKING zeners SOT-23 sod-323 Marking ZK BKC Semiconductors Scans-00155596
Text: SOD 323 Plastic SMD 0.2 Watt Zener Diodes SMZC2,0 thru Use Advantages SMZC36 This family is similar to the European PRO-Electron types, The specifications re |§ $ similar low zener test currents oyer v f|a p e ranges. Used where low cost and high density are needed, as in portable systems.
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SMZC36
OT-23
smzc24
smzc27
smzc30
smzc33
smzc36
DO-213AA)
DO-35
A6 SOD-323 MARK
SMD sot23 marking E6
E3 SOD-323 MARK
MiniMELF SMD Footprint
DO-213AA
MARKING zeners SOT-23
sod-323 Marking ZK
BKC Semiconductors
Scans-00155596
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PMBF5484
Abstract: IEC134 PMBF5485 PMBF5486 URC169
Text: Philips Semiconductors • bbSBTBl D02HQ41 0T3 HIAPX AMER P H ILI PS/ DIS CR ETE N-channel field-effect transistors PMBF5484; PMBF5485; PMBF5486 QUICK REFERENCE DATA FEATURES • Low noise SYMBOL • Interchangeability of drain and source connections VDs drain-source voltage
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D02HQ41
PMBF5484;
PMBF5485;
PMBF5486
PMBF5484
PMBF5485
PMBF5484
IEC134
PMBF5485
PMBF5486
URC169
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Untitled
Abstract: No abstract text available
Text: DIE PRODUCTS BURR-BROW N* [ INA110 DIE 1 Fast-Settling FET-lnput Very-High Accuracy INSTRUMENTATION AMPLIFIER DIE FEATURES APPLICATIONS • • • • • FAST SCANNING RATE MULTIPLEXED INPUT DATA ACQUISITION SYSTEM AMPLIFIER • FAST DIFFERENTIAL PULSE AMPLIFIER
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INA110
36VDC
18VDC
INA110
MIL-STD-883,
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T16xxxH
Abstract: No abstract text available
Text: r z 7 SCS-THOMSON ^ 7 # lüülOG l® IILIIEÎIË!®®]DOS T 1 6 XXXH STANDARD TRIACS FEATURES • It rms = 16A . V Drm = 400V to 800V ■ High surge current capability DESCRIPTION T0220 non-insulated (Plastic) The T16xxxH series of triacs uses a high
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T16xxxH
T0220
1995SGS-THOMSON
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TEA 1041
Abstract: No abstract text available
Text: .100" x .100" Latch/Ejector Header Straight, 4 Wall Optional ejector latches Mounting holes for securing header to board Shrouded to prevent against physical and chemical pin damage Solder tail and wrap tail options TS-0159-09 S heet 1 of 4 Physical Insulation
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TS-0159-09
QQ-N-290,
MIL-G-45204,
MIL-P-81728
-64XX
TD0S413
D0002n
TEA 1041
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diode marking code YF
Abstract: BF992 bf992 m92
Text: • bts3T3i oo23bia an ■ apx BF992 N AUER P H I L I P S / D I S C R E T E b7E D SILICO N N-CHANNEL DUAL GATE M O S-FET Depletion type field-effect transistor in a plastic S O T 1 4 3 microminiature envelope with source and substrate interconnected. This M O S -F E T tetrode is intended for use in v.h.f. applications, such as v.h.f.
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oo23bia
BF992
OT143
diode marking code YF
BF992
bf992 m92
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IRFZ44NS
Abstract: No abstract text available
Text: International ^Rectifier PD91315 IRFZ44NS preliminary HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier
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IRFZ44NS
4BS5452
IRFZ44NS
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4445a
Abstract: AT-41411 AT-41411-BLK AT-41411-TR1 transistor 41 74t 74t marking
Text: * W hat H E W L E T T mL/im P A C K A R D Surface Mount Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41411 F eatu res to-em itter pitch enables this tran sisto r to be used in m any different functions. The 14 em itter finger interdigitated geom etry
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AT-41411
AT-41411
OT-143
RN/50
4445a
AT-41411-BLK
AT-41411-TR1
transistor 41 74t
74t marking
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Untitled
Abstract: No abstract text available
Text: PD 9.1403 International ¡^Rectifier IRFIZ44N PRELIMINARY H EXFET Power M O S F E T Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Vdss = 55 V R ü S o n = Id =
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IRFIZ44N
0D23bc
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mb8316200
Abstract: MB8316200B mb83 B8316200B
Text: FUJITSU January 1994 Edition 1.0 DATA SHEET MB8316200B CMOS 16M-BIT MASK READ ONLY MEMORY 1 M x 16 2M X 8 CMOS MASK READ ONLY MEMORY The Fujitsu MB8316200B is a CMOS Si-gat mask-programmable static read only memory organized as 1,048,576 words by 16 bits or 2,097,152 words by 8 bits.
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MB8316200B
16M-BIT
MB8316200B
B8316200B
48-LEAD
FPT-48P-M08)
F48016S-4C
mb8316200
mb83
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Untitled
Abstract: No abstract text available
Text: Triple 10-bit Video D/A Converter Video Product Family TMC3003 Triple Video D/A Converter Raytheon Preliminary Information F e a tu re s 10 bit, 80 Msps The TMC3003 is a high-speed triple 10-bit D/A converter especially suited for video and graphics applications. It offers 10-bit resolution,
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10-bit
TMC3003
TMC3003
S173tD
40G07588
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DUP1
Abstract: No abstract text available
Text: FIJCRON TECHNOLOGY INC MICRON SSE T> • blllSMT DD037M3 DT4 ■ URN M T56C 2818 8 K x 18, DUAL 4 K x 18 C A CH E DATA SRAM ■ - ; CACHE DATA -0 4 - q q a i i
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DD037M3
8Kx18
66MHz
b00D37S2
DUP1
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